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For: Kashchieva S, Danesh P, Dyakov A. RF annealing of the implantation-induced defects in silicon using hydrogen plasma. ACTA ACUST UNITED AC 1984. [DOI: 10.1002/pssa.2210830147] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
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