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Abstract
ABSTRACTThe electrical properties of Cu/Si(100) and Cu3Si/Si(100) interfaces have been studied using both n- and p-type silicon samples. Current-voltage and capacitance-voltage measurements were performed in the temperature range 80-295 K in order to monitor Schottky barrier formation and electrical carrier concentration profiles. Deep-level transient spectroscopy was employed to observe Cu-related energy levels in the forbidden band gap of Si, and different ion beam analysis techniques were applied to study the interfacial reaction between Cu and Si. Emphasis is put on determination of Schottky barrier heights and their variation with temperature, dopant passivation by Cu atoms and interaction of Cu with irradiation-induced point defects in silicon.
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Mesli A, Heiser T. Defect reactions in copper-diffused and quenched p-type silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:11632-11641. [PMID: 10001177 DOI: 10.1103/physrevb.45.11632] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Aboelfotoh MO, Svensson BG. Copper passivation of boron in silicon and boron reactivation kinetics. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:12742-12747. [PMID: 9999448 DOI: 10.1103/physrevb.44.12742] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Indium-defect complexes in silicon studied by perturbed angular correlation spectroscopy. ACTA ACUST UNITED AC 1989. [DOI: 10.1007/bf00617764] [Citation(s) in RCA: 78] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
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