Brunet-Bruneau A, Vuye G, Frigerio JM, Abelνs F, Rivory J, Berger M, Chaton P. Infrared ellipsometry investigation of SiO(x)N(y) thin films on silicon.
APPLIED OPTICS 1996;
35:4998-5004. [PMID:
21102927 DOI:
10.1364/ao.35.004998]
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Abstract
The dielectric function ˜ε (˜ε = ε(1) + iε(2)) of silicon oxynitride films deposited on silicon wafers by dual ion-beam sputtering is determined by infrared ellipsometry between 580 and 5000 cm(-1). The phase-separation model is unable to reproduce the experimental data. The dependence of ˜ε on stoichiometry is analyzed with the microscopic Si-centered tetrahedron model. The random-bonding model with five SiO(4-j)N(j) (j = 0-4) tetrahedra gives a good description of the spectra, provided the dielectric function of the mixed tetrahedra is carefully chosen.
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