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Investigation of nanostructured Pd–Ag/n-ZnO thin film based Schottky junction for methane sensing. INTERNATIONAL NANO LETTERS 2016. [DOI: 10.1007/s40089-016-0187-6] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]
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Mitra P. Preparation of ZnO film on p-Si Substrate by Silar and Heterojunction Characteristics of p-Si/n-Zno. ACTA ACUST UNITED AC 2011. [DOI: 10.13005/msri/080128] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Zinc oxide (ZnO) thin films was deposited on p-silicon (Si) substrate from ammonium zincate bath following a chemical dipping technique called SILAR. Structural characterization by X-ray diffraction (XRD) indicates the formation of polycrystalline single phase ZnO with strong c-axis orientation. I-V characteristic of the p-Si/n-ZnO heterojunction was studied and rectification was observed. The maximum value of forward to reverse current ratio at room temperature was ~15 at 3.0 V. It increases to ~30 at 100oC.
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Affiliation(s)
- P. Mitra
- Department of Physics, The University of Burdwan, Golapbag, Burdwan - 713104, India
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