Polycrystalline β-FeSi2 Thin Films on Non-Silicon Substrates

Copper-based conductive composites with tailored thermal expansion

We have devised a moderate temperature hot-pressing route for preparing metal-matrix composites which possess tunable thermal expansion coefficients in combination with high electrical and thermal conductivities. The composites are based on incorporating ZrW2O8, a material with a negative coefficient of thermal expansion (CTE), within a continuous copper matrix. The ZrW2O8 enables us to tune the CTE in a predictable manner, while the copper phase is responsible for the electrical and thermal conductivity properties. An important consideration in the processing of these materials is to avoid the decomposition of the ZrW2O8 phase. This is accomplished by using relatively mild hot-pressing conditions of 500 °C for 1 h at 40 MPa. To ensure that these conditions enable sintering of the copper, we developed a synthesis route for the preparation of Cu nanoparticles (NPs) based on the reduction of a common copper salt in aqueous solution in the presence of a size control agent. Upon hot pressing these nanoparticles at 500 °C, we are able to achieve 92-93% of the theoretical density of copper. The resulting materials exhibit a CTE which can be tuned between the value of pure copper (16.5 ppm/°C) and less than 1 ppm/°C. Thus, by adjusting the relative amount of the two components, the properties of the composite can be designed so that a material with high electrical conductivity and a CTE that matches the relatively low CTE values of semiconductor or thermoelectric materials can be achieved. This unique combination of electrical and thermal properties enables these Cu-based metal-matrix composites to be used as electrical contacts to a variety of semiconductor and thermoelectric devices which offer stable operation under thermal cycling conditions.