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New insights on the doping of ZnO films with elements from group IIIA through electrochemical deposition. J Solid State Electrochem 2014. [DOI: 10.1007/s10008-014-2558-0] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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Nam G, Lee SH, So W, Yoon H, Park H, Kim YG, Kim S, Kim MS, Jung JH, Lee J, Kim Y, Leem JY. Temperature-dependent Photoluminescence Study on Aluminum-doped Nanocrystalline ZnO Thin Films by Sol-gel Dip-coating Method. B KOREAN CHEM SOC 2013. [DOI: 10.5012/bkcs.2013.34.1.95] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
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Wang A, Edleman N, Babcock J, Marks T, Lane M, Brazis P, Kannewurf C. Metal-Organic Chemical Vapor Deposition of Zn-In-Sn-O and Ga-In-Sn-O Transparent Conducting Oxide Thin Films. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-607-345] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
AbstractThe metal-organic chemical vapor deposition (MOCVD) technique has been successfully applied for growth of Sn-doped transparent, conducting Zn-In-O and Ga-In-O films using Sn(acac)2, In(dpm)3, Ga(dpm)3, and Zn(dpm)2, as volatile precursors. The 25 °C electrical conductivity of the as-grown films is as high as 1030 S/cm (n-type, carrier density N = 4.5 × 1020 cm−3, mobility µ = 14.3 cm2/V•s) for the Zn-In-O series and 700 S/cm (n-type, N = 8.1 × 1019 cm−3, µ = 55.2 cm2/V•s) for the Ga-In-O series. After Sn-doping, the Zn-In-O series exhibits 25 'C electrical conductivities as high as 2290 S/cm with a higher carrier mobility, while the Ga-InO series exhibits higher electrical conductivity (3280 S/cm at 25 °C) and much higher carrier density, but with diminished mobility. All films show broader optical transparency windows than that of commercial ITO films. Reductive annealing, carried out at 400-425 °C in a flowing gas mixture of H2(4%) and N2, results in increased carrier density and mobility as high as 64.6 cm2/V•s for films without Sn doping, but lowered carrier density for the Sn-doped films. X-ray diffraction, transmission electron microscopy, micro diffraction, and high-resolution X-ray analysis show that all films with good conductivity have cubic, homogeneously doped In2O3-like crystal structures.
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Chemically Sprayed Fluorine-Doped Zinc Oxide Thin Films Deposited from Zn(C5H7O2)2: Effect of the Molarity and Substrate Temperature on the Physical Properties. ACTA ACUST UNITED AC 2002. [DOI: 10.1002/1521-396x(200206)191:2<499::aid-pssa499>3.0.co;2-i] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Subramanyam TK, Srinivasulu Naidu B, Uthanna S. Characterisation of DC Reactive Magnetron Sputtered ZnO Films Prepared at Different Oxygen Pressures. ACTA ACUST UNITED AC 1999. [DOI: 10.1002/(sici)1521-396x(199906)173:2<425::aid-pssa425>3.0.co;2-q] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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