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Citation(s) in
RCA
3
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Ishitani Y
, Masuyama H, Terashima W, Yoshitani M, Hashimoto N, Che S, Yoshikawa A.
Bandgap energy of InN and its temperature dependence.
ACTA ACUST UNITED AC
2005. [DOI:
10.1002/pssc.200461433
]
[
Citation(s) in
RCA
: 29
]
[
Impact Index Per Article: 1.5
]
[
Reference Citation Analysis
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[Indexed: 11/07/2022]
Number
Cited by Other Article(s)
1
Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate.
FUNDAMENTAL RESEARCH
2021. [DOI:
10.1016/j.fmre.2021.09.020
]
[
Citation(s) in
RCA
: 0
]
[
Impact Index Per Article: 0
]
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[Indexed: 11/19/2022]
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2
Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix.
ACTA ACUST UNITED AC
2008. [DOI:
10.1116/1.2957620
]
[
Citation(s) in
RCA
: 50
]
[
Impact Index Per Article: 3.1
]
[
Reference Citation Analysis
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[Indexed: 11/17/2022]
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3
Ishitani Y
, Terashima W, Che SB, Yoshikawa A. Conduction and valence band edge properties of hexagonal InN characterized by optical measurements.
ACTA ACUST UNITED AC
2006. [DOI:
10.1002/pssc.200565386
]
[
Citation(s) in
RCA
: 20
]
[
Impact Index Per Article: 1.1
]
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[Indexed: 11/11/2022]
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