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Krishnan B, Imura M, Iida K, Nagamatsu K, Sugimura H, Nagai T, Sumii T, Mori F, Bandoh A, Iwaya M, Kamiyama S, Amano H, Akasaki I. High Temperature MOVPE Growth of AlxGa1−xN (0.2-1) Layers on Sapphire and SiC Substrates for the Fabrication Deep UV Optical Devices. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-0955-i04-03] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
ABSTRACTSingle crystalline AlN epitaxial layers have been grown on and (0001) sapphire and 6H-SiC substrates by MOVPE technique at high temperatures in the range of 1340-1500°C. The structural qualities of the high temperature grown AlN layers were found to be good as evidenced by X-ray diffraction analyses results. By transmission electron microscopic analysis, dislocation densities of the layers were found to be 6.2 × 107 cm−2 or lower and the formation of dislocation loops was confirmed. High temperature bridge layers of AlN and AlxGa1−xN layers were grown on linear-groove patterned sapphire based AlN templates and 6H-SiC substrates. AlxGa1−xN bridge layers exhibited different growth behaviours depending on the direction of groove patterns on the sub-strates.
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