1
|
Żak M, Muziol G, Siekacz M, Bercha A, Hajdel M, Nowakowski-Szkudlarek K, Lachowski A, Chlipała M, Wolny P, Turski H, Skierbiszewski C. Bidirectional light-emitting diode as a visible light source driven by alternating current. Nat Commun 2023; 14:7562. [PMID: 37985775 PMCID: PMC10661849 DOI: 10.1038/s41467-023-43335-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/27/2023] [Accepted: 11/07/2023] [Indexed: 11/22/2023] Open
Abstract
Gallium nitride-based light-emitting diodes have revolutionized the lighting market by becoming the most energy-efficient light sources. However, the power grid, in example electricity delivery system, is built based on alternating current, which raises problems for directly driving light emitting diodes that require direct current to operate effectively. In this paper, we demonstrate a proof-of-concept device that addresses this fundamental issue - a gallium nitride-based bidirectional light-emitting diode. Its structure is symmetrical with respect to the active region, which, depending on the positive or negative bias, allows for the injection of either electrons or holes from each side. It is composed of two tunnel junctions that surround the active region. In this work, the optical and electrical properties of bidirectional light emitting diodes are investigated under direct and alternating current conditions. We find that the light is emitted in both directions of the supplied current, contrary to conventional light emitting diodes; hence, bidirectional light-emitting diodes can be considered a semiconductor light source powered directly with alternating current. In addition, we show that bidirectional light-emitting diodes can be stacked vertically to multiply the optical power achieved from a single device.
Collapse
Affiliation(s)
- Mikołaj Żak
- Institute of High Pressure Physics Polish Academy of Sciences, Sokołowska 29/37, 01-142, Warsaw, Poland.
| | - Grzegorz Muziol
- Institute of High Pressure Physics Polish Academy of Sciences, Sokołowska 29/37, 01-142, Warsaw, Poland
| | - Marcin Siekacz
- Institute of High Pressure Physics Polish Academy of Sciences, Sokołowska 29/37, 01-142, Warsaw, Poland
| | - Artem Bercha
- Institute of High Pressure Physics Polish Academy of Sciences, Sokołowska 29/37, 01-142, Warsaw, Poland
| | - Mateusz Hajdel
- Institute of High Pressure Physics Polish Academy of Sciences, Sokołowska 29/37, 01-142, Warsaw, Poland
| | | | - Artur Lachowski
- Institute of High Pressure Physics Polish Academy of Sciences, Sokołowska 29/37, 01-142, Warsaw, Poland
| | - Mikołaj Chlipała
- Institute of High Pressure Physics Polish Academy of Sciences, Sokołowska 29/37, 01-142, Warsaw, Poland
| | - Paweł Wolny
- Institute of High Pressure Physics Polish Academy of Sciences, Sokołowska 29/37, 01-142, Warsaw, Poland
| | - Henryk Turski
- Institute of High Pressure Physics Polish Academy of Sciences, Sokołowska 29/37, 01-142, Warsaw, Poland
| | - Czesław Skierbiszewski
- Institute of High Pressure Physics Polish Academy of Sciences, Sokołowska 29/37, 01-142, Warsaw, Poland
| |
Collapse
|
2
|
Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions. ELECTRONICS 2020. [DOI: 10.3390/electronics9091481] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
We demonstrate the applications of tunnel junctions (TJs) for new concepts of monolithic nitride-based multicolor light emitting diode (LED) and laser diode (LD) stacks. The presented structures were grown by plasma-assisted molecular beam epitaxy (PAMBE) on GaN bulk crystals. We demonstrate a stack of four LDs operated at pulse mode with emission wavelength of 453 nm. The output power of 1.1 W and high slope efficiency of 2.3 W/A is achieved for devices without dielectric mirrors. Atomically flat surface after the epitaxy of four LD stack and low dislocation density is measured as a result of proper TJ design with optimized doping level. The strain compensation design with InGaN waveguides and AlGaN claddings is shown to be crucial to avoid cracking and lattice relaxation of the 5 µm thick structure. Vertical connection of n-LDs allows for cascade emission of photons and increases the quantum efficiency n-times. The two-color (blue and green) LEDs are demonstrated. Application of TJs simplifies device processing, reducing the need for applications of p-type contact. The key factor enabling demonstration of such devices is hydrogen-free PAMBE technology, in which activation of buried p-type layers is not necessary.
Collapse
|
3
|
Corfdir P, Calabrese G, Laha A, Auzelle T, Geelhaar L, Brandt O, Fernández-Garrido S. Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry. CrystEngComm 2018. [DOI: 10.1039/c8ce00431e] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Accessing in situ relevant information on the fluctuations in length and covered area fraction at the μm scale of vertical nanowire ensembles by polarization resolved optical reflectometry.
Collapse
Affiliation(s)
- Pierre Corfdir
- Paul-Drude-Institut für Festkörperelektronik
- Leibniz-Institut im Forschungsverbund Berlin e.V
- 10117 Berlin
- Germany
| | - Gabriele Calabrese
- Paul-Drude-Institut für Festkörperelektronik
- Leibniz-Institut im Forschungsverbund Berlin e.V
- 10117 Berlin
- Germany
| | - Apurba Laha
- Paul-Drude-Institut für Festkörperelektronik
- Leibniz-Institut im Forschungsverbund Berlin e.V
- 10117 Berlin
- Germany
| | - Thomas Auzelle
- Paul-Drude-Institut für Festkörperelektronik
- Leibniz-Institut im Forschungsverbund Berlin e.V
- 10117 Berlin
- Germany
| | - Lutz Geelhaar
- Paul-Drude-Institut für Festkörperelektronik
- Leibniz-Institut im Forschungsverbund Berlin e.V
- 10117 Berlin
- Germany
| | - Oliver Brandt
- Paul-Drude-Institut für Festkörperelektronik
- Leibniz-Institut im Forschungsverbund Berlin e.V
- 10117 Berlin
- Germany
| | - Sergio Fernández-Garrido
- Paul-Drude-Institut für Festkörperelektronik
- Leibniz-Institut im Forschungsverbund Berlin e.V
- 10117 Berlin
- Germany
- Grupo de Electrónica y Semiconductores
| |
Collapse
|
4
|
Sobanska M, Klosek K, Zytkiewicz ZR, Borysiuk J, Witkowski BS, Lusakowska E, Reszka A, Jakiela R. Plasma-assisted MBE growth of GaN on Si(111) substrates. CRYSTAL RESEARCH AND TECHNOLOGY 2011. [DOI: 10.1002/crat.201100408] [Citation(s) in RCA: 23] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
|