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For: Coudurier N, Boichot R, Fellmann V, Claudel A, Blanquet E, Crisci A, Coindeau S, Pique D, Pons M. Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy. ACTA ACUST UNITED AC 2013. [DOI: 10.1002/pssc.201200686] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]

For:	Coudurier N, Boichot R, Fellmann V, Claudel A, Blanquet E, Crisci A, Coindeau S, Pique D, Pons M. Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy. ACTA ACUST UNITED AC 2013. [DOI: 10.1002/pssc.201200686] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]

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Cited by Other Article(s)

Abd Rahman MN, Yusuf Y, Anuar A, Mahat MR, Chanlek N, Talik NA, Abdul Khudus MIM, Zainal N, Abd Majid WH, Shuhaimi A. Agglomeration enhancement of AlN surface diffusion fluxes on a (0 0 0 1)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD. CrystEngComm 2020;22:3309-3321. [DOI: 10.1039/d0ce00113a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]

Abd Rahman MN, Shuhaimi A, Yusuf Y, Li H, Sulaiman AF, Alif Samsudin ME, Zainal N, Abdul Khudus MI. Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD. SUPERLATTICES AND MICROSTRUCTURES 2018;120:319-326. [DOI: 10.1016/j.spmi.2018.05.024] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/02/2023]

Coudurier N, Boichot R, Mercier F, Reboud R, Lay S, Blanquet E, Pons M. Growth of Boron Nitride on (0001) AlN Templates by High Temperature-Hydride Vapor Phase Epitaxy (HT-HVPE). ACTA ACUST UNITED AC 2013. [DOI: 10.1016/j.phpro.2013.07.050] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/27/2022]