Characterization of thin oxide films on GaAs substrates by optical methods and atomic force microscopy

Optical characterization of inhomogeneous thin films with randomly rough boundaries exhibiting wide intervals of spatial frequencies

Results concerning the optical characterization of two inhomogeneous polymer-like thin films deposited by the plasma enhanced chemical vapor deposition onto silicon single crystal substrates are presented. One of these films is deposited onto a smooth silicon surface while the latter film is deposited on a randomly rough silicon surface with a wide interval of spatial frequencies. A combination of variable-angle spectroscopic ellipsometry and spectroscopic reflectometry applied at near-normal incidence are utilized for characterizing both the films. An inhomogeneity of the films is described by the method based on multiple-beam interference of light and method replacing inhomogeneous thin films by multilayer systems. Homogeneous transition layers between the films and substrates are considered. The Campi-Coriasso dispersion model is used to express spectral dependencies of the optical constants of the polymer-like films and transition layers. A combination of the scalar diffraction theory and Rayleigh-Rice theory is used to include boundary roughness into formulae for the optical quantities of the rough polymer-like film. Within the optical characterization, the spectral dependencies of the optical constants at the upper and lower boundaries of both the polymer-like films are determined together with their thickness values and profiles of the optical constants. Roughness parameters are determined for the rough film. The values of the roughness parameters are confirmed by atomic force microscopy. Moreover, the optical constants and thicknesses of both the transition layers are determined. A discussion of the achieved results for both the polymer-like films and transition layers is performed.

Optical characterization of inhomogeneous thin films with randomly rough boundaries

An inhomogeneous polymer-like thin film was deposited by the plasma enhanced chemical vapor deposition onto silicon single-crystal substrate whose surface was roughened by anodic oxidation. The inhomogeneous thin film with randomly rough boundaries was created as a result. This sample was studied using the variable-angle spectroscopic ellipsometry and spectroscopic reflectometry. The structural model including the inhomogeneous thin film, transition layer, and identically rough boundaries was used to process the experimental data. The scalar diffraction theory was used to describe the influence of roughness. The influence of the scattered light registered by the spectrophotometer due to its finite acceptance angle was also taken into account. The thicknesses and optical constants of the inhomogeneous thin film and the transition layer were determined in the optical characterization together with the roughness parameters. The determined rms value of the heights of roughness was found to be in good agreement with values obtained using AFM. The results of the optical characterization of the studied inhomogeneous thin film with rough boundaries were also verified by comparing them with the results of the optical characterization of the inhomogeneous thin film prepared using the same deposition conditions but onto the substrate with a smooth surface.

Optics of Inhomogeneous Thin Films with Defects: Application to Optical Characterization

This review paper is devoted to optics of inhomogeneous thin films exhibiting defects consisting in transition layers, overlayers, thickness nonuniformity, boundary roughness and uniaxial anisotropy. The theoretical approaches enabling the inclusion of these defects into formulae expressing the optical quantities of these inhomogeneous thin films are summarized. These approaches are based on the recursive and matrix formalisms for the transition layers and overlayers, averaging of the elements of the Mueller matrix using local thickness distribution or polynomial formulation for the thickness nonuniformity, scalar diffraction theory and Rayleigh-Rice theory or their combination for boundary roughness and Yeh matrix formalism for uniaxial anisotropy. The theoretical results are illustrated using selected examples of the optical characterization of the inhomogeneous polymer-like thin films exhibiting the combination of the transition layers and thickness nonuniformity and inhomogeneous thin films of nonstoichiometric silicon nitride with the combination of boundary roughness and uniaxial anisotropy. This characterization is realized by variable angle spectroscopic ellipsometry and spectroscopic reflectometry. It is shown that using these optical techniques, the complete optical characterization of the mentioned thin films can be performed. Thus, it is presented that the values of all the parameters characterizing these films can be determined.

Spectroscopic ellipsometry of inhomogeneous thin films exhibiting thickness non-uniformity and transition layers

In this paper the complete optical characterization of an inhomogeneous polymer-like thin film of SiO_xC_yH_z exhibiting a thickness non-uniformity and transition layer at the boundary between the silicon substrate and this film is performed using variable angle spectroscopic ellipsometry. The Campi-Coriasso dispersion model was utilized for describing the spectral dependencies of the optical constants of the SiO_xC_yH_z thin film and transition layer. The multiple-beam interference model was used for expressing inhomogeneity of the SiO_xC_yH_z thin film. The thickness non-uniformity of this film was taken into account by means of the averaging of the elements of the Mueller matrix performed using the thickness distribution for the wedge-shaped non-uniformity. The spectral dependencies of the optical constants of the SiO_xC_yH_z thin film at the upper and lower boundaries together with the spectral dependencies of the optical constants of the transition layer were determined. Furthermore, the thickness values of the SiO_xC_yH_z film and transition layer, profiles of the optical constants of the SiO_xC_yH_z thin film and the rms value of local thicknesses corresponding to its thickness non-uniformity were determined. Thus, all the parameters characterizing this complicated film were determined without any auxiliary methods.