Fick's law of diffusion depth profiles applied to the degradation of oxidized polystyrene during ARXPS analysis

Supercritical Fluid-Driven Polymer Phase Separation for Microlens with Tunable Dimension and Curvature

Microlenses are highly sought as reliable means for high-resolution optical imaging at low illumination intensities. Plano-convex configuration with tunable dimension and curvature is an essential feature in the microlens fabrication. In this study, we present a facile and green route for preparing well-defined microlenses based on polymer phase separation in the presence of supercritical carbon dioxide (scCO2). The behaviors of linear polymethylmethacrylate protruded from cross-linked silicone network in scCO2 environment are investigated from the perspectives of thermodynamics and kinetics. Microlenses with dimensions from 2 to 15 μm and contact angles from 55° to 112° are successfully obtained through the adjustment of the kinetic conditions and outgassing rate. With the tunable focal length, they exhibit intrinsic function of discerning submicroscale patterns that are unable to be observed directly under optical microscope. Moreover, size confinement on the substrate results in the generation of well-ordered microlens arrays, affording great promise for applications in bioimaging, photolithography, light harvesting, and optical nanosensing.

Gate Dielectric Chemical Structure−Organic Field-Effect Transistor Performance Correlations for Electron, Hole, and Ambipolar Organic Semiconductors

This study describes a general approach for probing semiconductor-dielectric interfacial chemistry effects on organic field-effect transistor performance parameters using bilayer gate dielectrics. Organic semiconductors exhibiting p-/n-type or ambipolar majority charge transport are grown on six different bilayer dielectric structures consisting of various spin-coated polymers/HMDS on 300 nm SiO(2)/p(+)-Si, and are characterized by AFM, SEM, and WAXRD, followed by transistor electrical characterization. In the case of air-sensitive (generally high LUMO energy) n-type semiconductors, dielectric surface modifications induce large variations in the corresponding OTFT performance parameters although the film morphologies and microstructures remain similar. In marked contrast, the device performance of air-stable n-type and p-type semiconductors is not significantly affected by the same dielectric surface modifications. Among the bilayer dielectric structures examined, nonpolar polystyrene coatings on SiO(2) having minimal gate leakage and surface roughness significantly enhance the mobilities of overlying air-sensitive n-type semiconductors to as high as approximately 2 cm(2)/(V s) for alpha,omega-diperfluorohexylcarbonylquaterthiophene polystyrene/SiO(2). Electron trapping due to silanol and carbonyl functionalities at the semiconductor-dielectric interface is identified as the principal origin of the mobility sensitivity to the various surface chemistries in the case of n-type semiconductors having high LUMO energies. Thiophene-based n-type semiconductors exhibiting similar film morphologies and microstructures on various bilayer gate dielectrics therefore provide an incisive means to probe TFT performance parameters versus semiconductor-dielectric interface relationships.