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Maniammal K, Madhu G, Biju V. Nanostructured mesoporous NiO as an efficient photocatalyst for degradation of methylene blue: Structure, properties and performance. ACTA ACUST UNITED AC 2018. [DOI: 10.1016/j.nanoso.2018.07.007] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/28/2022]
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Strachan JP, Yang JJ, Montoro LA, Ospina CA, Ramirez AJ, Kilcoyne ALD, Medeiros-Ribeiro G, Williams RS. Characterization of electroforming-free titanium dioxide memristors. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2013; 4:467-73. [PMID: 23946916 PMCID: PMC3740802 DOI: 10.3762/bjnano.4.55] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2013] [Accepted: 07/20/2013] [Indexed: 05/10/2023]
Abstract
Metal-insulator-metal (MIM) structures based on titanium dioxide have demonstrated reversible and non-volatile resistance-switching behavior and have been identified with the concept of the memristor. Microphysical studies suggest that the development of sub-oxide phases in the material drives the resistance changes. The creation of these phases, however, has a number of negative effects such as requiring an elevated voltage, increasing the device-to-device variability, damaging the electrodes due to oxygen evolution, and ultimately limiting the device lifetime. In this work we show that the deliberate inclusion of a sub-oxide layer in the MIM structure maintains the favorable switching properties of the device, while eliminating many of the negative effects. Electrical and microphysical characterization of the resulting structures was performed, utilizing X-ray and electron spectroscopy and microscopy. In contrast to structures which are not engineered with a sub-oxide layer, we observed dramatically reduced microphysical changes after electrical operation.
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Affiliation(s)
- John Paul Strachan
- nanoElectronics Research Group, HP Labs, 1501 Page Mill Rd, Palo Alto, CA 94304, USA
| | - J Joshua Yang
- nanoElectronics Research Group, HP Labs, 1501 Page Mill Rd, Palo Alto, CA 94304, USA
| | - L A Montoro
- Brazilian Nanotechnology National Laboratory, CP 6192, Campinas, SP 13083-970, Brazil
- Universidade Federal de Minas Gerais, 31270-901, Belo Horizonte, MG, Brazil
| | - C A Ospina
- Brazilian Nanotechnology National Laboratory, CP 6192, Campinas, SP 13083-970, Brazil
| | - A J Ramirez
- Brazilian Nanotechnology National Laboratory, CP 6192, Campinas, SP 13083-970, Brazil
| | - A L D Kilcoyne
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Gilberto Medeiros-Ribeiro
- nanoElectronics Research Group, HP Labs, 1501 Page Mill Rd, Palo Alto, CA 94304, USA
- Universidade Federal de Minas Gerais, 31270-901, Belo Horizonte, MG, Brazil
| | - R Stanley Williams
- nanoElectronics Research Group, HP Labs, 1501 Page Mill Rd, Palo Alto, CA 94304, USA
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Nagashima K, Yanagida T, Oka K, Kanai M, Klamchuen A, Kim JS, Park BH, Kawai T. Intrinsic mechanisms of memristive switching. NANO LETTERS 2011; 11:2114-2118. [PMID: 21476563 DOI: 10.1021/nl200707n] [Citation(s) in RCA: 30] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
Resistive switching (RS) memory effect in metal-oxide-metal junctions is a fascinating phenomenon toward next-generation universal nonvolatile memories. However the lack of understanding the electrical nature of RS has held back the applications. Here we demonstrate the electrical nature of bipolar RS in cobalt oxides, such as the conduction mechanism and the switching location, by utilizing a planar single oxide nanowire device. Experiments utilizing field effect devices and multiprobe measurements have shown that the nanoscale RS in cobalt oxides originates from redox events near the cathode with p-type conduction paths, which is in contrast with the prevailing oxygen vacancy based model.
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Affiliation(s)
- Kazuki Nagashima
- Institute of Scientific and Industrial Research, Osaka University , 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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