C60 molecular depth profiling of bilayered polymer films using ToF-SIMS

Dealing with image shifting in 3D ToF-SIMS depth profiles

The high sputter efficiency and low damage of gas cluster ion beams have enabled depth profiling to greater depths within organic samples using time-of-flight secondary ion mass spectrometry (ToF-SIMS). Due to the typically fixed geometry of the ion sources used in ToF-SIMS, as one digs into a surface, the position sampled by ion beams shifts laterally. This causes a lateral shift in the resulting images that can become quite significant when profiling down more than one micron. Here, three methods to compensate for this image shifting are presented in order to more accurately stack the images to present a 3D representation. These methods include (1) using software to correct the image shifts post-acquisition, (2) correcting the sample height during acquisition, and (3) adjusting the beam position during acquisition. The advantages and disadvantages of these methods are discussed. It was found that all three methods were successful in compensating for image shifting in ToF-SIMS depth profiles resulting in a more accurate display of the 3D data. Features from spherical objects that were ellipsoidal prior to shifting were seen to be spherical after correction. Software shifting is convenient as it can be applied after data acquisition. However, when using software shifting, one must take into account the scan size and the size of the features of interest as image shifts can be significant and can result in cropping of features of interest. For depth profiles deeper than a few microns, hardware methods should be used as they preserve features of interest within the field of view regardless of the profile depth. Software shifting can also be used to correct for small shifts not accounted for by hardware methods. A combination of hardware and software shift correction can enable correction for a wide range of samples and profiling depths. The scripts required for the software shifting demonstrated herein are provided along with tutorials in the supplementary material.

Visualizing molecular distributions for biomaterials applications with mass spectrometry imaging: a review

Mass spectrometry imaging (MSI) is a rapidly emerging field that is continually finding applications in new and exciting areas. The ability of MSI to measure the spatial distribution of molecules at or near the surface of complex substrates makes it an ideal candidate for many applications, including those in the sphere of materials chemistry. Continual development and optimization of both ionization sources and analyzer technologies have resulted in a wide array of MSI tools available, both commercially available and custom-built, with each configuration possessing inherent strengths and limitations. Despite the unique potential of MSI over other chemical imaging methods, their potential and application to (bio)materials science remains in our view a largely underexplored avenue. This review will discuss these techniques enabling high parallel molecular detection, focusing on those with reported uses in (bio)materials chemistry applications and highlighted with select applications. Different technologies are presented in three main sections; secondary ion mass spectrometry (SIMS) imaging, matrix-assisted laser desorption ionization (MALDI) MSI, and emerging MSI technologies with potential for biomaterial analysis. The first two sections (SIMS and MALDI) discuss well-established methods that are continually evolving both in technological advancements and in experimental versatility. In the third section, relatively new and versatile technologies capable of performing measurements under ambient conditions will be introduced, with reported applications in materials chemistry or potential applications discussed. The aim of this review is to provide a concise resource for those interested in utilizing MSI for applications such as biomimetic materials, biological/synthetic material interfaces, polymer formulation and bulk property characterization, as well as the spatial and chemical distributions of nanoparticles, or any other molecular imaging application requiring broad chemical speciation.

ToF-SIMS Depth Profiling of PS-b-PMMA Block Copolymers Using Arn+, C60++, and Cs+ Sputtering Ions

Time-of-flight secondary ion mass spectrometry (ToF-SIMS) is a high performance tool for molecular depth profiling of polymer films, in particular when they are structured in microphases. However, a major issue is the degradation of polymer materials under ion irradiation in reactions such as cross-linking, chain breaking, or reorganization processes of polymers which have been demonstrated for materials such as polystyrene (PS) and poly(methyl methacrylate) (PMMA). This work aims at comparing ToF-SIMS molecular depth profiling of structured polymers (polystyrene (PS)-b-polymethyl methacrylate (PMMA) block copolymers (BCP)) using either ultralow energy cesium or the more recently introduced C₆₀⁺⁺ (under NO dosing and with sample cooling) and argon cluster ion beams (using Ar₁₅₀₀⁺ ions at 5 keV). The latter improved the quality of the depth profiles, especially the argon cluster ion beam, as it is characterized by a greater homogeneity for the sputter yields of PS and PMMA. No significant artifacts were observed, and this was confirmed by the comparison of depth profiles obtained from films with variable thickness, annealing time, and morphology (cylindrical blocks vs spherical blocks). Comparison to a theoretical model (hexagonal centered pattern) ensured that the ToF-SIMS depth profiles described the real morphology and may thus be a relevant characterization tool to verify the morphology of the films as a function of the deposition parameters.

Characterization of ion profiles in light-emitting electrochemical cells by secondary ion mass spectrometry

Ion profiles in polymer light-emitting electrochemical cells are known to significantly affect performance and stability, but are not easily measured. Here, secondary ion mass spectrometry is used to investigate ion profiles in both dynamic and chemically fixed junction devices. Results indicate lower reversibility of dynamic junctions and a more significant time delay for ion redistribution than previously expected, but confirm the complete immobilization of ions in chemically fixed junction devices. When compared with prior studies analyzing the electric field profiles in similar devices, these results help to elucidate the roles of ion distribution and electrochemical doping in LECs.