Low-Dimensional Topological Crystalline Insulators

Weak Antilocalization and Negative Magnetoresistance of the Gate-Tunable PbTe Thin Films

We have systematically studied the electromagnetic transport properties of PbTe thin films under gate voltage modulation. The system demonstrates pronounced electron-electron interactions exclusively within the gate voltage range where only hole carriers are present. Furthermore, the Berry phase is utilized to qualitatively elucidate the transition between weak antilocalization (WAL) and weak localization (WL) through the regulation of gate voltage and temperature. Using the three-resistor model, we have effectively explained the correlation between the characteristic temperature of the R-T curve, the coexistence of electron-hole carriers, and the nonmonotonic temperature dependence of negative magnetoresistance (NMR), consistently indicating that complex magnetotransport phenomena are caused by microscopic disorder. Our research findings open up new avenues for exploring and manipulating the magnetotransport properties of PbTe thin films.

Room-Temperature Growth of Square-Millimeter Single-Crystalline Two-Dimensional Metal Halides on Silicon

Silicon is the cornerstone of electronics and photonics. In this context, almost all integrated devices derived from two-dimensional (2D) materials stay rooted in silicon technology. However, as the growth substrate, silicon has long been thought to be a hindrance for growing 2D materials through bottom-up methods that require high growth temperatures, and thus, indirect routes are usually considered instead. Although promising growth of large-area 2D materials on silicon has been demonstrated, the direct growth of single-crystalline materials using low-thermal-budget synthesis methods remains challenging. Here, we report the room-temperature growth of millimeter-scale single-crystal 2D metal halides on silicon substrates with a hydroxyl-terminated surface. Theoretical calculations reveal that the activation energy for surface diffusion can be reduced by an order of magnitude by terminating the surface with hydroxyl groups, from which on-silicon growth is greatly facilitated at room temperature and enables a 4-order-of-magnitude increase in area. The high quality and uniformity of the resulting single crystals are further evidenced. The optoelectronic devices employing the as-grown materials show an ultralow dark current of 10-13 A and a high detectivity of 1013 Jones, thereby corroborating a weak-light detection ability. These results would point to a rich space of surface modulation that can be used to surmount current limitations and demonstrate a promising strategy for growing 2D materials directly on silicon at room temperature to produce large single crystals.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

Engineering Second-Order Corner States in 2D Multiferroics

The understanding and manipulate of the second-order corner states are central to both fundamental physics and future topotronics applications. Despite the fact that numerous second-order topological insulators (SOTIs) are achieved, the efficient engineering in a given material remains elusive. Here, the emergence of 2D multiferroics SOTIs in SbAs and BP₅ monolayers is theoretically demonstrated, and an efficient and straightforward way for engineering the nontrivial corner states by ferroelasticity and ferroelectricity is remarkably proposed. With ferroelectric polarization of SbAs and BP₅ monolayers, the nontrivial corner states emerge in the mirror symmetric corners and are perpendicular to orientations of the in-plane spontaneous polarization. And remarkably the spatial distribution of the corner states can be effectively tuned by a ferroelastic switching. At the intermediate states of both ferroelectric and ferroelastic switchings, the corner states disappear. These finding not only combines exotic SOTIs with multiferroics but also pave the way for experimental discovery of 2D tunable SOTIs.

Topological phase transition and highly tunable topological transport in topological crystalline insulator Pb1-x Sn x Te (111) thin films

We report the magneotransport studies on the topological crystalline insulator (TCI) Pb_1-x Sn _x Te (111) single crystal thin films grown by molecular beam epitaxy. By decreasing Sn content, an enhanced sheet resistance and decreased hole density are observed in Pb_1-x Sn _x Te (111) thin films. A weak antilocalization likely related to the topological surface states is observed in transport of Pb_1-x Sn _x Te (x > 0.4) thin films, whereas a weak localization is displayed in Pb_1-x Sn _x Te (x < 0.4) thin films. This tunable weak antilocalization to weak localization transition is attributed to the open of Dirac gap because of the topological phase transition in TCI Pb_1-x Sn _x Te. Our research has a potential application in the tunable electronic and spintronic devices and is very significant to the fundamental research based on TCI Pb_1-x Sn _x Te thin film.

Sub-millimeter-Scale Growth of One-Unit-Cell-Thick Ferrimagnetic Cr2S3 Nanosheets

Two-dimensional (2D) magnetic materials provide an ideal platform for the application in spintronic devices due to their unique spin states in nanometer scale. However, recent research on the exfoliated monolayer magnetic materials suffers from the instability in ambient atmosphere, which needs extraordinary protection. Hence the controllable synthesis of 2D magnetic materials with good quality and stability should be addressed. Here we report for the first time the van der Waals (vdW) epitaxial growth of one-unit-cell-thick air-stable ferrimagnet Cr₂S₃ semiconductor via a facile chemical vapor deposition method. Single crystal Cr₂S₃ with the domain size reaching to 200 μm is achieved. Most importantly, we observe the as grown Cr₂S₃ with a Néel temperature ( T_N) of up to 120 K and a maximum saturation magnetic momentum of up to 65 μemu. As the temperature decreases, the samples show a transition from soft magnet to hard magnet with the highest coercivity of 1000 Oe. The one-unit-cell-thick Cr₂S₃ devices show a p-type transfer behavior with an on/off ratio over 10³. Our work highlights Cr₂S₃ monolayer as an ideal magnetic semiconductor for 2D spintronic devices. The vdW epitaxy of nonlayered magnets introduces a new route for realizing magnetism in 2D limit and provides more application potential in the 2D spintronics.

Van der Waals Epitaxial Growth of 2D Metallic Vanadium Diselenide Single Crystals and their Extra-High Electrical Conductivity

2D metallic transition-metal dichalcogenides (MTMDs) have recently emerged as a new class of materials for the engineering of novel electronic phases, 2D superconductors, magnets, as well as novel electronic applications. However, the mechanical exfoliation route is predominantly used to obtain such metallic 2D flakes, but the batch production remains challenging. Herein, the van der Waals epitaxial growth of monocrystalline, 1T-phase, few-layer metallic VSe₂ nanosheets on an atomically flat mica substrate via a "one-step" chemical vapor deposition method is reported. The thickness of the VSe₂ nanosheets is precisely tuned from several nanometers to several tenths of nanometers. More significantly, the 2D VSe₂ single crystals are found to present an excellent metallic feature, as evidenced by the extra-high electrical conductivity of up to 10⁶ S m^-1 , 1-4 orders of magnitude higher than that of various conductive 2D materials. The thickness-dependent charge-density-wave phase transitions are also examined through low-temperature transport measurements, which reveal that the synthesized 2D metallic 1T-VSe₂ nanosheets should serve as good research platforms for the detecting novel many-body states. These results open a new path for the synthesis and property investigations of nanoscale-thickness 2D MTMDs crystals.

Thermoelectric transport in temperature-driven two-dimensional topological insulators

We theoretically investigate on the thermoelectric (TE) transport properties of edge and bulk states in a temperature-driven two-dimensional (2D) topological insulator (TI) realized from CdTe/HgTe/CdTe quantum wells (QWs). It is found that the temperature can effectively drive a TI phase in CdTe/HgTe/CdTe QWs. We find that the TE transport properties of 2D TI can be governed by edge states, bulk states, or their interplay, depending on driving temperature and chemical potential of the system. Moreover, we find that the TE figure of merit ZT shows a peak at relatively low temperatures due to the competition between bulk and edge transports. This peak vanishes at relatively high temperatures due to the dominance of bulk states in the TE transport. With decreasing the ribbon width of the temperature-driven 2D TI, the low-temperature ZT exhibits two peaks, among which one occurs due to the bulk-edge competition and the other occurs due to the edge-edge hybridization; while the high-temperature ZT first exhibits the bulk-state behavior and then the edge-state one, which is indicative of a bulk-to-edge transition in the TE transport.

Simultaneous observation of surface- and edge-states of a 2D topological insulator through scanning tunneling spectroscopy and differential conductance imaging

Gapless edge-states with a Dirac point below the Fermi energy and band-edges at the interior observed in 2D topological insulators.

Surface-energy engineered Bi-doped SnTe nanoribbons with weak antilocalization effect and linear magnetoresistance

The rational design of semiconductor nanocrystals with well-defined surfaces is a crucial step towards the realization of next-generation photodetectors, and thermoelectric and spintronic devices. SnTe nanocrystals, as an example, are particularly attractive as a type of topological crystalline insulator, where surface facets determine their surface states. However, most of the available SnTe nanocrystals are dominated by thermodynamically stable {100} facets, and it is challenging to grow uniform nanocrystals with {111} facets. In this study, guided by surface-energy calculations, we employ a chemical vapour deposition approach to fabricate Bi doped SnTe nanostructures, in which their surface facets are tuned by Bi doping. The obtained Bi doped SnTe nanoribbons with distinct {111} surfaces show a weak antilocalization effect and linear magnetoresistance under high magnetic fields, which demonstrate their great potential for future spintronic applications.