1
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Liao L, Kovalska E, Regner J, Song Q, Sofer Z. Two-Dimensional Van Der Waals Thin Film and Device. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2303638. [PMID: 37731156 DOI: 10.1002/smll.202303638] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2023] [Revised: 08/07/2023] [Indexed: 09/22/2023]
Abstract
In the rapidly evolving field of thin-film electronics, the emergence of large-area flexible and wearable devices has been a significant milestone. Although organic semiconductor thin films, which can be manufactured through solution processing, have been identified, their utility is often undermined by their poor stability and low carrier mobility under ambient conditions. However, inorganic nanomaterials can be solution-processed and demonstrate outstanding intrinsic properties and structural stability. In particular, a series of two-dimensional (2D) nanosheet/nanoparticle materials have been shown to form stable colloids in their respective solvents. However, the integration of these 2D nanomaterials into continuous large-area thin with precise control of layer thickness and lattice orientation still remains a significant challenge. This review paper undertakes a detailed analysis of van der Waals thin films, derived from 2D materials, in the advancement of thin-film electronics and optoelectronic devices. The superior intrinsic properties and structural stability of inorganic nanomaterials are highlighted, which can be solution-processed and underscor the importance of solution-based processing, establishing it as a cornerstone strategy for scalable electronic and optoelectronic applications. A comprehensive exploration of the challenges and opportunities associated with the utilization of 2D materials for the next generation of thin-film electronics and optoelectronic devices is presented.
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Affiliation(s)
- Liping Liao
- Department of Inorganic Chemistry, University of Chemistry and Technology, Technicka 5, Prague, 166 28, Czech Republic
| | - Evgeniya Kovalska
- Faculty of Environment, Science and Economy, Department of Engineering, Exeter, EX4 4QF, UK
| | - Jakub Regner
- Department of Inorganic Chemistry, University of Chemistry and Technology, Technicka 5, Prague, 166 28, Czech Republic
| | - Qunliang Song
- School of Materials and Energy, Southwest University, Chongqing, 400715, P. R. China
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology, Technicka 5, Prague, 166 28, Czech Republic
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2
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Aftab S, Hegazy HH. Emerging Trends in 2D TMDs Photodetectors and Piezo-Phototronic Devices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205778. [PMID: 36732842 DOI: 10.1002/smll.202205778] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2022] [Revised: 01/20/2023] [Indexed: 05/04/2023]
Abstract
The piezo-phototronic effect shows promise with regards to improving the performance of 2D semiconductor-based flexible optoelectronics, which will potentially open up new opportunities in the electronics field. Mechanical exfoliation and chemical vapor deposition (CVD) influence the piezo-phototronic effect on a transparent, ultrasensitive, and flexible van der Waals (vdW) heterostructure, which allows the use of intrinsic semiconductors, such as 2D transition metal dichalcogenides (TMD). The latest and most promising 2D TMD-based photodetectors and piezo-phototronic devices are discussed in this review article. As a result, it is possible to make flexible piezo-phototronic photodetectors, self-powered sensors, and higher strain tolerance wearable and implantable electronics for health monitoring and generation of piezoelectricity using just a single semiconductor or vdW heterostructures of various nanomaterials. A comparison is also made between the functionality and distinctive properties of 2D flexible electronic devices with a range of applications made from 2D TMDs materials. The current state of the research about 2D TMDs can be applied in a variety of ways in order to aid in the development of new types of nanoscale optoelectronic devices. Last, it summarizes the problems that are currently being faced, along with potential solutions and future prospects.
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Affiliation(s)
- Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, Seoul, 05006, South Korea
| | - Hosameldin Helmy Hegazy
- Department of Physics, Faculty of Science, King Khalid University, Abha, P.O. Box 9004, Saudi Arabia
- 2Research Center for Advanced Materials Science (RCAMS), King Khalid University, Abha, 61413, P. O. Box 9004, Saudi Arabia
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3
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Nawaz A, Merces L, Ferro LMM, Sonar P, Bufon CCB. Impact of Planar and Vertical Organic Field-Effect Transistors on Flexible Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204804. [PMID: 36124375 DOI: 10.1002/adma.202204804] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Revised: 09/13/2022] [Indexed: 06/15/2023]
Abstract
The development of flexible and conformable devices, whose performance can be maintained while being continuously deformed, provides a significant step toward the realization of next-generation wearable and e-textile applications. Organic field-effect transistors (OFETs) are particularly interesting for flexible and lightweight products, because of their low-temperature solution processability, and the mechanical flexibility of organic materials that endows OFETs the natural compatibility with plastic and biodegradable substrates. Here, an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided. The electrical, mechanical, and physical properties of POFETs and VOFETs are critically discussed, with a focus on four pivotal applications (integrated logic circuits, light-emitting devices, memories, and sensors). It is pointed out that the flexible function of the relatively newer VOFET technology, along with its perspective on advancing the applicability of flexible POFETs, has not been reviewed so far, and the direct comparison regarding the performance of POFET- and VOFET-based flexible applications is most likely absent. With discussions spanning printed and wearable electronics, materials science, biotechnology, and environmental monitoring, this contribution is a clear stimulus to researchers working in these fields to engage toward the plentiful possibilities that POFETs and VOFETs offer to flexible electronics.
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Affiliation(s)
- Ali Nawaz
- Center for Sensors and Devices, Bruno Kessler Foundation (FBK), Trento, 38123, Italy
| | - Leandro Merces
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-100, Brazil
| | - Letícia M M Ferro
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-100, Brazil
- Institute of Chemistry, University of Campinas, Campinas, São Paulo, 13083-970, Brazil
| | - Prashant Sonar
- School of Chemistry and Physics, Queensland University of Technology (QUT), Brisbane, QLD, 4000, Australia
- Centre for Materials Science, Queensland University of Technology, 2 George Street, Brisbane, QLD, 4000, Australia
| | - Carlos C B Bufon
- MackGraphe - Graphene and Nanomaterials Research Center, Mackenzie Presbyterian Institute, São Paulo, 01302-907, Brazil
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4
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Xiang L, Wang Y, Xia F, Liu F, He D, Long G, Zeng X, Liang X, Jin C, Wang Y, Pan A, Peng LM, Hu Y. An epidermal electronic system for physiological information acquisition, processing, and storage with an integrated flash memory array. SCIENCE ADVANCES 2022; 8:eabp8075. [PMID: 35977018 PMCID: PMC9385141 DOI: 10.1126/sciadv.abp8075] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Epidermal electronic systems that simultaneously provide physiological information acquisition, processing, and storage are in high demand for health care/clinical applications. However, these system-level demonstrations using flexible devices are still challenging because of obstacles in device performance, functional module construction, or integration scale. Here, on the basis of carbon nanotubes, we present an epidermal system that incorporates flexible sensors, sensor interface circuits, and an integrated flash memory array to collect physiological information from the human body surface; amplify weak biosignals by high-performance differential amplifiers (voltage gain of 27 decibels, common-mode rejection ratio of >43 decibels, and gain bandwidth product of >22 kilohertz); and store the processed information in the memory array with performance on par with industrial standards (retention time of 108 seconds, program/erase voltages of ±2 volts, and endurance of 106 cycles). The results shed light on the great application potential of epidermal electronic systems in personalized diagnostic and physiological monitoring.
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Affiliation(s)
- Li Xiang
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
- College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Yuru Wang
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
| | - Fan Xia
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Fang Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
| | - Daliang He
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Guanhua Long
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
| | - Xiangwen Zeng
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
| | - Xuelei Liang
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
| | - Chuanhong Jin
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
| | - Yuwei Wang
- College of Electrical and Information Engineering, Hunan University, Changsha 410082, China
| | - Anlian Pan
- College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
| | - Youfan Hu
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Corresponding author.
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5
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Frolova L, Furmansky Y, Shestakov AF, Emelianov NA, Liddell PA, Gust D, Visoly-Fisher I, Troshin PA. Advanced Nonvolatile Organic Optical Memory Using Self-Assembled Monolayers of Porphyrin-Fullerene Dyads. ACS APPLIED MATERIALS & INTERFACES 2022; 14:15461-15467. [PMID: 35343673 PMCID: PMC8990517 DOI: 10.1021/acsami.1c24979] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/27/2021] [Accepted: 03/09/2022] [Indexed: 06/13/2023]
Abstract
Photo-switchable organic field-effect transistors (OFETs) represent an important platform for designing memory devices for a diverse array of products including security (brand-protection, copy-protection, keyless entry, etc.), credit cards, tickets, and multiple wearable organic electronics applications. Herein, we present a new concept by introducing self-assembled monolayers of donor-acceptor porphyrin-fullerene dyads as light-responsive triggers modulating the electrical characteristics of OFETs and thus pave the way to the development of advanced nonvolatile optical memory. The devices demonstrated wide memory windows, high programming speeds, and long retention times. Furthermore, we show a remarkable effect of the orientation of the fullerene-polymer dyads at the dielectric/semiconductor interface on the device behavior. In particular, the dyads anchored to the dielectric by the porphyrin part induced a reversible photoelectrical switching of OFETs, which is characteristic of flash memory elements. On the contrary, the devices utilizing the dyad anchored by the fullerene moiety demonstrated irreversible switching, thus operating as read-only memory (ROM). A mechanism explaining this behavior is proposed using theoretical DFT calculations. The results suggest the possibility of revisiting hundreds of known donor-acceptor dyads designed previously for artificial photosynthesis or other purposes as versatile optical triggers in advanced OFET-based multibit memory devices for emerging electronic applications.
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Affiliation(s)
- Lyubov
A. Frolova
- Institute
for Problems of Chemical Physics of Russian Academy of Sciences,Semenov av. 1, Chernogolovka, Moscow Region 142432, Russia
| | - Yulia Furmansky
- Yersin
Department of Solar Energy & Environmental Physics, Blaustein
Institutes for Desert Research, Ben-Gurion
University of the Negev, Sede Boqer Campus, Midreshet Ben Gurion 8499000, Israel
| | - Alexander F. Shestakov
- Institute
for Problems of Chemical Physics of Russian Academy of Sciences,Semenov av. 1, Chernogolovka, Moscow Region 142432, Russia
| | - Nikita A. Emelianov
- Institute
for Problems of Chemical Physics of Russian Academy of Sciences,Semenov av. 1, Chernogolovka, Moscow Region 142432, Russia
| | - Paul A. Liddell
- School
of Molecular Sciences, College of Liberal Arts and Sciences, Arizona State University, Tempe, Arizona 85287-1604, United States
| | - Devens Gust
- School
of Molecular Sciences, College of Liberal Arts and Sciences, Arizona State University, Tempe, Arizona 85287-1604, United States
| | - Iris Visoly-Fisher
- Yersin
Department of Solar Energy & Environmental Physics, Blaustein
Institutes for Desert Research, Ben-Gurion
University of the Negev, Sede Boqer Campus, Midreshet Ben Gurion 8499000, Israel
| | - Pavel A. Troshin
- Institute
for Problems of Chemical Physics of Russian Academy of Sciences,Semenov av. 1, Chernogolovka, Moscow Region 142432, Russia
- Silesian
University of Technology, Akademicka 2A, 44-100 Gliwice, Poland
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6
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Zhu S, Li D, Wang Q, He Z, Wu Y, Lin H, Huang LB, Huang H, Gao S, Wang J, Gong Z, Qin Q, Wang X. Exciton Emissions in Bilayer WSe 2 Tuned by the Ferroelectric Polymer. J Phys Chem Lett 2022; 13:1636-1643. [PMID: 35143214 DOI: 10.1021/acs.jpclett.1c04029] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
In this work, a hybrid structure of multilayer transition-metal dichalcogenides (TMDs) and a ferroelectric polymer is designed to achieve passive control of optical properties in situ. The electrical polarization in the ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) polymer can regulate the photoluminescence (PL) in bilayer WSe2. The total PL emission intensity is substantially suppressed or enhanced under large gate voltage in bilayer WSe2. This is because electrons transfer between the conduction band K valley and the conduction band Λ valley by the electrostatic field in the P(VDF-TrFE) polymer. This electron transfer further adjusts the proportion of direct and indirect excitons and, in turn, changes the overall optical radiation efficiency. We also illustrate that the engineered PL originates from the external electric-field-dependent transferred electron effect. The theoretical result matches the experimental data well. This work demonstrates a device platform in which passive regulation is achieved using 2D TMDs modulated by polarized ferroelectric materials.
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Affiliation(s)
- Sixin Zhu
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
- School of Chemical and Environmental Engineering, Hanshan Normal University, Chaozhou 521041, Guangdong, People's Republic of China
| | - Dan Li
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Qiang Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Zirui He
- Department of Materials Science, Fudan University, Shanghai 200433, People's Republic of China
| | - Yongpeng Wu
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Huihong Lin
- School of Chemical and Environmental Engineering, Hanshan Normal University, Chaozhou 521041, Guangdong, People's Republic of China
| | - Long-Biao Huang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Hai Huang
- Department of Materials Science, Fudan University, Shanghai 200433, People's Republic of China
| | - Shangpeng Gao
- Department of Materials Science, Fudan University, Shanghai 200433, People's Republic of China
| | - Jianlu Wang
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Zhirui Gong
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Qi Qin
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Xingjun Wang
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
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7
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Fabrication of PA6/MoS2 nanocomposites via melt blending of PA6 with PA6/PEG modified-MoS2 masterbatch. Polym Bull (Berl) 2022. [DOI: 10.1007/s00289-021-04068-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2022]
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8
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Ni Y, Wang Y, Xu W. Recent Process of Flexible Transistor-Structured Memory. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e1905332. [PMID: 32243063 DOI: 10.1002/smll.201905332] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2019] [Revised: 12/20/2019] [Accepted: 03/04/2020] [Indexed: 06/11/2023]
Abstract
Flexible transistor-structured memory (FTSM) has attracted great attention for its important role in flexible electronics. For nonvolatile information storage, FTSMs with floating-gate, charge-trap, and ferroelectric mechanisms have been developed. By introducing an optical sensory module, FTSM can be operated by optical inputs to function as an optical memory transistor. As a special type of FTSM, transistor-structured artificial synapse emulates important functions of a biological synapse to mimic brain-inspired memory behaviors and nervous signal transmissions. This work reviews the recent development of the above mentioned FTSMs, with a focus on working mechanism and materials, and flexibility.
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Affiliation(s)
- Yao Ni
- Institute of Optoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China
| | - Yongfei Wang
- School of Materials and Metallurgy, University of Science and Technology Liaoning, Anshan, 114051, China
| | - Wentao Xu
- Institute of Optoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China
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9
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Pei J, Wu X, Huo J, Liu WJ, Zhang DW, Ding SJ. High-bandwidth light inputting multilevel photoelectric memory based on thin-film transistor with a floating gate of CsPbBr 3/CsPbI 3 blend quantum dots. NANOTECHNOLOGY 2021; 32:095204. [PMID: 33137802 DOI: 10.1088/1361-6528/abc6e0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The electronic-photonic convergent systems can overcome the data transmission bottleneck for microchips by enabling processor and memory chips with high-bandwidth optical input/output. However, current silicon-based electronic-photonic systems require various functional devices/components to convert high-bandwidth optical signals into electrical ones, thus making further integrations of sophisticated systems rather difficult. Here, we demonstrate thin-film transistor-based photoelectric memories employing CsPbBr3/CsPbI3 blend perovskite quantum dots (PQDs) as a floating gate, and multilevel memory cells are achieved under programming and erasing modes, respectively, by imputing high-bandwidth optical signals. For different bandwidth light input (i.e. 500-550, 575-650 and 675-750 nm) with the same intensity, three levels of programming window (i.e. 3.7, 1.9 and 0.8 V) and erasing window (i.e. -1.9, -0.6 and -0.1 V) are obtained under electrical pulses, respectively. This is because the blend PQDs have two different bandgaps, and different amounts of photo-generated carriers can be produced for different wavelength optical inputs. It is noticed that the 675-750 nm light inputs have no effects on both programming and erasing windows because of no photo-carriers generation. Four memory states are demonstrated, showing enough large gaps (1.12-5.61 V) between each other, good data retention and programming/erasing endurance. By inputting different optical signals, different memory states can be switched easily. Therefore, this work directly demonstrates high-bandwidth light inputting multilevel memory cells for novel electronic-photonic systems.
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Affiliation(s)
- Junxiang Pei
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Xiaohan Wu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Jingyong Huo
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Wen-Jun Liu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Shi-Jin Ding
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
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10
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Jin R, Wang J, Shi K, Qiu B, Ma L, Huang S, Li Z. Multilevel storage and photoinduced-reset memory by an inorganic perovskite quantum-dot/polystyrene floating-gate organic transistor. RSC Adv 2020; 10:43225-43232. [PMID: 35514915 PMCID: PMC9058139 DOI: 10.1039/d0ra08021g] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/19/2020] [Accepted: 11/18/2020] [Indexed: 11/24/2022] Open
Abstract
Inorganic halide perovskite quantum dots (IHP QDs) have been widely studied in optoelectronic devices because of their size-dependent tunable bandgaps, long electron–hole diffusion lengths and excellent absorption properties. Herein, a novel floating-gate organic field-effect transistor memory (FGOFETM) is demonstrated, comprising a floating-gate of IHP QDs embedded in a polystyrene matrix. Notably, the FGOFETM exhibits photoinduced-reset characteristic that allows data removal by photo irradiation. This feature makes low energy-consuming memory and innovative devices possible. The nonvolatile devices also show a large memory window (≈90 V), ultrahigh memory on/off ratio (over 107) and therefore excellent multilevel information storage, in which 4 recognizable non-volatile states and long retention time (up to 10 years) are obtained. This work not only offers an effective guideline of high-performance FGOFETMs, but also shows great potential to realize multilevel data storage under electrical programming and photoinduced-reset processes. A novel floating-gate organic transistor memory with photoinduced-reset and multilevel storage function is demonstrated. The device has a large memory window (≈90 V), ultrahigh memory on/off ratio (over 107) and long retention time (over 10 years).![]()
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Affiliation(s)
- Risheng Jin
- College of Physics and Electronic Information Engineering, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
| | - Jin Wang
- Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
| | - Keli Shi
- College of Physics and Electronic Information Engineering, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
| | - Beibei Qiu
- College of Physics and Electronic Information Engineering, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
| | - Lanchao Ma
- College of Materials Science and Engineering, Beijing Key Laboratory of Special Elastomer Composite Materials, Beijing Institute of Petrochemical Technology Beijing 102617 P. R. China
| | - Shihua Huang
- College of Physics and Electronic Information Engineering, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
| | - Zhengquan Li
- Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
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11
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Wang T, Meng J, He Z, Chen L, Zhu H, Sun Q, Ding S, Zhou P, Zhang DW. Ultralow Power Wearable Heterosynapse with Photoelectric Synergistic Modulation. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:1903480. [PMID: 32328430 PMCID: PMC7175259 DOI: 10.1002/advs.201903480] [Citation(s) in RCA: 44] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2019] [Revised: 02/12/2020] [Accepted: 02/27/2020] [Indexed: 05/13/2023]
Abstract
Although the energy consumption of reported neuromorphic computing devices inspired by biological systems has become lower than traditional memory, it still remains greater than bio-synapses (≈10 fJ per spike). Herein, a flexible MoS2-based heterosynapse is designed with two modulation modes, an electronic mode and a photoexcited mode. A one-step mechanical exfoliation method on flexible substrate and low-temperature atomic layer deposition process compatible with flexible electronics are developed for fabricating wearable heterosynapses. With a pre-spike of 100 ns, the synaptic device exhibits ultralow energy consumption of 18.3 aJ per spike in long-term potentiation and 28.9 aJ per spike in long-term depression. The ultrafast speed and ultralow power consumption provide a path for a neuromorphic computing system owning more excellent processing ability than the human brain. By adding optical modulation, a modulatory synapse is constructed to dynamically control correlations between pre- and post-synapses and realize complex global neuromodulations. The novel wearable heterosynapse expands the accessible range of synaptic weights (ratio of facilitation ≈228%), providing an insight into the application of wearable 2D highly efficient neuromorphic computing architectures.
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Affiliation(s)
- Tian‐Yu Wang
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - Jia‐Lin Meng
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - Zhen‐Yu He
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - Lin Chen
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - Hao Zhu
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - Qing‐Qing Sun
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - Shi‐Jin Ding
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - Peng Zhou
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - David Wei Zhang
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
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12
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Lv Z, Wang Y, Chen J, Wang J, Zhou Y, Han ST. Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems. Chem Rev 2020; 120:3941-4006. [DOI: 10.1021/acs.chemrev.9b00730] [Citation(s) in RCA: 114] [Impact Index Per Article: 28.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Affiliation(s)
- Ziyu Lv
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yan Wang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Jingrui Chen
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Junjie Wang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
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13
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Meng JL, Wei Z, Tang J, Zhao Y, Wang Q, Tian J, Yang R, Zhang G, Shi D. Employing defected monolayer MoS 2 as charge storage materials. NANOTECHNOLOGY 2020; 31:235710. [PMID: 32126546 DOI: 10.1088/1361-6528/ab7c47] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Recently, various two-dimensional (2D) materials have been employed in charge trapping memories as the charge trapping layer instead of conventional metal/semiconductor thin films or discrete particles. Such ultra-thin charge trapping layers are beneficial to the development of miniaturized devices, which is a trend in modern semiconductor technology. 2D MoS2 is an alternative charge trapping material, but previous investigations have been limited to their multilayers. Here, we present the study on employing monolayer MoS2 as charge trapping layer in charge trapping devices. We found that intrinsic monolayer MoS2 is less effective for charge trapping; while defective monolayer MoS2 shows enhanced charge storage capacity. By employing argon plasma treatments, we are able to control the defect density in monolayer MoS2 and the memory window of monolayer MoS2 based charge trapping devices can vary from 1.01 to 5.14 V at a sweeping voltage of ±20 V and program/erase slope from 0.06 to 0.32. Optimized devices show ∼1 ms program/erase speed, >70% charge retention after ∼7000 s and good endurance properties with >1000 cycles. The enhancement of the memory window is attributed to the localized charge tapping sites in defected monolayer MoS2. This work would provide insights for the improvement of storage capacity through defects engineering in the atomically thin 2D materials.
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Affiliation(s)
- Jian-Ling Meng
- Department of Physics, Shaanxi University of Science and Technology, Xi'an 710021, People's Republic of China
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14
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Kim KL, Koo M, Park C. Controlled polymer crystal/two-dimensional material heterostructures for high-performance photoelectronic applications. NANOSCALE 2020; 12:5293-5307. [PMID: 32100770 DOI: 10.1039/c9nr10911k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The control of atomically thin two-dimensional (2D) crystal-based heterostructures wherein the interfaces of 2D nanomaterials are vertically stacked with other thin functional materials via van der Waals interactions is highly important for not only optimizing the excellent properties of 2D nanomaterials, but also for utilizing the functionality of the contact materials. In particular, when 2D nanomaterials are combined with soft polymeric components, the resulting photoelectronic devices are potentially scalable and mechanically flexible, allowing the development of a variety of prototype soft-electronic devices, such as solar cells, displays, photodetectors, and non-volatile memory devices. Diverse polymer/2D heterostructures are frequently employed, but the performance of the devices with heterostructures is limited, mainly because of the difficulty in controlling the molecular structures of the polymers on the 2D surface. Thus, understanding the crystal interactions of polymers on atomically flat and dangling-bond-free surfaces of 2D materials is essential for ensuring high performance. In this study, the recent progress made in the development of thin polymer films fabricated on the surfaces of various 2D nanomaterials for high-performance photoelectronic devices is comprehensively reviewed, with an emphasis on the control of the molecular and crystalline structures of the polymers on the 2D surface.
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Affiliation(s)
- Kang Lib Kim
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
| | - Min Koo
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
| | - Cheolmin Park
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
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15
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Han Y, Wang J, Wan H, Wang S, Hu H, Xiao TH, Cheng Z, Liu T. Solution processable transition metal dichalcogenides-based hybrids for photodetection. NANO MATERIALS SCIENCE 2019. [DOI: 10.1016/j.nanoms.2019.09.010] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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16
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Yan C, Wen J, Lin P, Sun Z. A Tunneling Dielectric Layer Free Floating Gate Nonvolatile Memory Employing Type-I Core-Shell Quantum Dots as Discrete Charge-Trapping/Tunneling Centers. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1804156. [PMID: 30480357 DOI: 10.1002/smll.201804156] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2018] [Revised: 11/14/2018] [Indexed: 06/09/2023]
Abstract
A nonvolatile memory with a floating gate structure is fabricated using ZnSe@ZnS core-shell quantum dots as discrete charge-trapping/tunneling centers. Systematical investigation reveals that the spontaneous recovery of the trapped charges in the ZnSe core can be effectively avoided by the type-I energy band structure of the quantum dots. The surface oleic acid ligand surrounding the quantum dots can also play a role of energy barrier to prevent unintentional charge recovery. The device based on the quantum dots demonstrates a large memory window, stable retention, and good endurance. What is more, integrating charge-trapping and tunneling components into one quantum dot, which is solution synthesizable and processible, can largely simplify the processing of the floating gate nonvolatile memory. This research reveals the promising application potential of type-I core-shell nanoparticles as the discrete charge-trapping/tunneling centers in nonvolatile memory in terms of performance, cost, and flexibility.
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Affiliation(s)
- Chengyuan Yan
- College of Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518000, China
- Shenzhen Key Laboratory of Special Functional Materials & Guangdong, Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Jiamin Wen
- College of Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518000, China
| | - Peng Lin
- Shenzhen Key Laboratory of Special Functional Materials & Guangdong, Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Zhenhua Sun
- College of Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518000, China
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17
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Cheng SW, Chang Chien YH, Huang TY, Liu CL, Liou GS. Linkage effects of triphenylamine-based aromatic polymer electrets on electrical memory performance. POLYMER 2018. [DOI: 10.1016/j.polymer.2018.06.040] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/27/2022]
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18
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Wu X, Gong K, Zhao G, Lou W, Wang X, Liu W. Surface Modification of MoS2 Nanosheets as Effective Lubricant Additives for Reducing Friction and Wear in Poly-α-olefin. Ind Eng Chem Res 2018. [DOI: 10.1021/acs.iecr.8b00454] [Citation(s) in RCA: 36] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Xinhu Wu
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, People’s Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China
| | - Kuiliang Gong
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, People’s Republic of China
- Qingdao Center of Resource Chemistry & New Materials, Qingdao 266000, People’s Republic of China
| | - Gaiqing Zhao
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, People’s Republic of China
- Qingdao Center of Resource Chemistry & New Materials, Qingdao 266000, People’s Republic of China
| | - Wenjing Lou
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, People’s Republic of China
- Qingdao Center of Resource Chemistry & New Materials, Qingdao 266000, People’s Republic of China
| | - Xiaobo Wang
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, People’s Republic of China
- Qingdao Center of Resource Chemistry & New Materials, Qingdao 266000, People’s Republic of China
| | - Weimin Liu
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, People’s Republic of China
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Zhou L, Mao J, Ren Y, Han ST, Roy VAL, Zhou Y. Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:1703126. [PMID: 29377568 DOI: 10.1002/smll.201703126] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2017] [Revised: 11/04/2017] [Indexed: 06/07/2023]
Abstract
Following the trend of miniaturization as per Moore's law, and facing the strong demand of next-generation electronic devices that should be highly portable, wearable, transplantable, and lightweight, growing endeavors have been made to develop novel flexible data storage devices possessing nonvolatile ability, high-density storage, high-switching speed, and reliable endurance properties. Nonvolatile organic data storage devices including memory devices on the basis of floating-gate, charge-trapping, and ferroelectric architectures, as well as organic resistive memory are believed to be favorable candidates for future data storage applications. In this Review, typical information on device structure, memory characteristics, device operation mechanisms, mechanical properties, challenges, and recent progress of the above categories of flexible data storage devices based on organic nanoscaled materials is summarized.
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Affiliation(s)
- Li Zhou
- College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Jingyu Mao
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yi Ren
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Vellaisamy A L Roy
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
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20
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Zhou L, Han ST, Shu S, Zhuang J, Yan Y, Sun QJ, Zhou Y, Roy VAL. Localized Surface Plasmon Resonance-Mediated Charge Trapping/Detrapping for Core-Shell Nanorod-Based Optical Memory Cells. ACS APPLIED MATERIALS & INTERFACES 2017; 9:34101-34110. [PMID: 28891295 DOI: 10.1021/acsami.7b07486] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
For following the trend of miniaturization as per Moore's law, increasing efforts have been made to develop single devices with versatile functionalities for Internet of Things (IoT). In this work, organic optical memory devices with excellent dual optoelectronic functionality including light sensing and data storage have been proposed. The Au@Ag core-shell nanorods (NRs)-based memory device exhibits large memory window up to 19.7 V due to the well-controlled morphology of Au@Ag NRs with optimum size and concentration. Furthermore, since the extinction intensity of Au@Ag NRs gradually enhance with the increase in Ag shell thickness, the phototunable behaviors of memory device were systematically studied by varying the thickness of Ag shell. Multilevel data storage can be achieved with the light assistant. Finally, the simulation results demonstrate that the phototunable memory property is originated from the multimode localized surface plasmon resonance (LSPR) of Au@Ag NRs, which is in consistent with the experimental results. The Au@Ag core-shell NRs-based memories may open up a new strategy toward developing high-performance optoelectronic devices.
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Affiliation(s)
| | | | | | - Jiaqing Zhuang
- Department of Physics and Materials Science, City University of Hong Kong , Hong Kong, China
| | | | - Qi-Jun Sun
- Department of Physics and Materials Science, City University of Hong Kong , Hong Kong, China
| | | | - V A L Roy
- Department of Physics and Materials Science, City University of Hong Kong , Hong Kong, China
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