Atomic-Scale Fabrication of In-Plane Heterojunctions of Few-Layer MoS2 via In Situ Scanning Transmission Electron Microscopy

Direct observation of single-atom defects in monolayer two-dimensional materials by using electron ptychography at 200 kV acceleration voltage

Electron ptychography has emerged as a popular technology for high-resolution imaging by combining the high coherence of electron sources with the ultra-fast scanning electron coil. However, the limitations of conventional pixelated detectors, including poor dynamic range and slow data readout speeds, have posed restrictions in the past on conducting electron ptychography experiments. We used the Gatan STELA pixelated detector to capture sequential diffraction data of monolayer two-dimensional (2D) materials for ptychographic reconstruction. By using the pixelated detector and electron ptychography, we demonstrate the observation of the radiation damage at atomic resolution in Transition Metal Dichalcogenides (TMDs).

Thermolysis-Driven Growth of Vanadium Oxide Nanostructures Revealed by In Situ Transmission Electron Microscopy: Implications for Battery Applications

Understanding the growth modes of 2D transition-metal oxides through direct observation is of vital importance to tailor these materials to desired structures. Here, we demonstrate thermolysis-driven growth of 2D V₂O₅ nanostructures via in situ transmission electron microscopy (TEM). Various growth stages in the formation of 2D V₂O₅ nanostructures through thermal decomposition of a single solid-state NH₄VO₃ precursor are unveiled during the in situ TEM heating. Growth of orthorhombic V₂O₅ 2D nanosheets and 1D nanobelts is observed in real time. The associated temperature ranges in thermolysis-driven growth of V₂O₅ nanostructures are optimized through in situ and ex situ heating. Also, the phase transformation of V₂O₅ to VO₂ was revealed in real time by in situ TEM heating. The in situ thermolysis results were reproduced using ex situ heating, which offers opportunities for upscaling the growth of vanadium oxide-based materials. Our findings offer effective, general, and simple pathways to produce versatile 2D V₂O₅ nanostructures for a range of battery applications.

The Atomic Drill Bit: Precision Controlled Atomic Fabrication of 2D Materials

The ability to deterministically fabricate nanoscale architectures with atomic precision is the central goal of nanotechnology, whereby highly localized changes in the atomic structure can be exploited to control device properties at their fundamental physical limit. Here, an automated, feedback-controlled atomic fabrication method is reported and the formation of 1D-2D heterostructures in MoS₂ is demonstrated through selective transformations along specific crystallographic orientations. The atomic-scale probe of an aberration-corrected scanning transmission electron microscope (STEM) is used, and the shape and symmetry of the scan pathway relative to the sample orientation are controlled. The focused and shaped electron beam is used to reliably create Mo₆ S₆ nanowire (MoS-NW) terminated metallic-semiconductor 1D-2D edge structures within a pristine MoS₂ monolayer with atomic precision. From these results, it is found that a triangular beam path aligned along the zig-zag sulfur terminated (ZZS) direction forms stable MoS-NW edge structures with the highest degree of fidelity without resulting in disordering of the surrounding MoS₂ monolayer. Density functional theory (DFT) calculations and ab initio molecular dynamic simulations (AIMD) are used to calculate the energetic barriers for the most stable atomic edge structures and atomic transformation pathways. These discoveries provide an automated method to improve understanding of atomic-scale transformations while opening a pathway toward more precise atomic-scale engineering of materials.

In Situ Atomic-Scale Observation of Monolayer MoS2 Devices under High-Voltage Biasing via Transmission Electron Microscopy

2D materials have great potential for not only device scaling but also various applications. To prompt the development of 2D electronics and optoelectronics, a better understanding of the limitation of materials is essential. Material failure caused by bias can lead to variations in device behavior and even electrical breakdown. In this study, the structural evolution of monolayer MoS₂ with high bias is revealed via in situ transmission electron microscopy at the atomic scale. The biasing process is recorded and studied with the aid of aberration-corrected scanning transmission electron microscopy. The effects of electron beam irradiation and biasing are also discussed through the combination of experiments and theory. It is found that the Mo nanoclusters result from disintegration of MoS₂ and sulfur depletion, which are induced by Joule heating. The thermal stress can also damage the MoS₂ layer and form long cracks in both in situ and ex situ biasing cases. Investigation of the results obtained with different applied voltages helps to further verify the mechanism of evolution and provide a comprehensive study of the function of biasing.

Growth Mechanism of Periodic-Structured MoS2 by Transmission Electron Microscopy

Molybdenum disulfide (MoS₂) was grown on a laser-processed periodic-hole sapphire substrate through chemical vapor deposition. The main purpose was to investigate the mechanism of MoS₂ growth in substrate with a periodic structure. By controlling the amount and position of the precursor, adjusting the growth temperature and time, and setting the flow rate of argon gas, MoS₂ grew in the region of the periodic holes. A series of various growth layer analyses of MoS₂ were then confirmed by Raman spectroscopy, photoluminescence spectroscopy, and atomic force microscopy. Finally, the growth mechanism was studied by transmission electron microscopy (TEM). The experimental results show that in the appropriate environment, MoS₂ can be successfully grown on substrate with periodic holes, and the number of growth layers can be determined through measurements. By observing the growth mechanism, composition analysis, and selected area electron diffraction diagram by TEM, we comprehensively understand the growth phenomenon. The results of this research can serve as a reference for the large-scale periodic growth of MoS₂. The production of periodic structures by laser drilling is advantageous, as it is relatively simpler than other methods.

In Situ Fabrication of Freestanding Single-Atom-Thick 2D Metal/Metallene and 2D Metal/ Metallene Oxide Membranes: Recent Developments

In recent years, two-dimensional (2D) materials have attracted a lot of research interest as they exhibit several fascinating properties. However, outside of 2D materials derived from van der Waals layered bulk materials only a few other such materials are realized, and it remains difficult to confirm their 2D freestanding structure. Despite that, many metals are predicted to exist as 2D systems. In this review, the authors summarize the recent progress made in the synthesis and characterization of these 2D metals, so called metallenes, and their oxide forms, metallene oxides as free standing 2D structures formed in situ through the use of transmission electron microscopy (TEM) and scanning TEM (STEM) to synthesize these materials. Two primary approaches for forming freestanding monoatomic metallic membranes are identified. In the first, graphene pores as a means to suspend the metallene or metallene oxide and in the second, electron-beam sputtering for the selective etching of metal alloys or thick complex initial materials is employed to obtain freestanding single-atom-thick 2D metal. The data show a growing number of 2D metals/metallenes and 2D metal/ metallene oxides having been confirmed and point to a bright future for further discoveries of these 2D materials.