1
|
Huang Q, Yin W, Gao B, Zeng Q, Yao D, Zhang H, Zhao Y, Zheng W, Zhang J, Yang X, Zhang X, Rogach AL. Enhancing crystal integrity and structural rigidity of CsPbBr 3 nanoplatelets to achieve a narrow color-saturated blue emission. LIGHT, SCIENCE & APPLICATIONS 2024; 13:111. [PMID: 38734686 PMCID: PMC11088658 DOI: 10.1038/s41377-024-01441-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Revised: 03/27/2024] [Accepted: 03/29/2024] [Indexed: 05/13/2024]
Abstract
Quantum-confined CsPbBr3 perovskites are promising blue emitters for ultra-high-definition displays, but their soft lattice caused by highly ionic nature has a limited stability. Here, we endow CsPbBr3 nanoplatelets (NPLs) with atomic crystal-like structural rigidity through proper surface engineering, by using strongly bound N-dodecylbenzene sulfonic acid (DBSA). A stable, rigid crystal structure, as well as uniform, orderly-arranged surface of these NPLs is achieved by optimizing intermediate reaction stage, by switching from molecular clusters to mono-octahedra, while interaction with DBSA resulted in formation of a CsxO monolayer shell capping the NPL surface. As a result, both structural and optical stability of the CsPbBr3 NPLs is enhanced by strong covalent bonding of DBSA, which inhibits undesired phase transitions and decomposition of the perovskite phase potentially caused by ligand desorption. Moreover, rather small amount of DBSA ligands at the NPL surface results in a short inter-NPL spacing in their closely-packed films, which facilitates efficient charge injection and transport. Blue photoluminescence of the produced CsPbBr3 NPLs is bright (nearly unity emission quantum yield) and peaks at 457 nm with an extremely narrow bandwidth of 3.7 nm at 80 K, while the bandwidth of the electroluminescence (peaked at 460 nm) also reaches a record-narrow value of 15 nm at room temperature. This value corresponds to the CIE coordinates of (0.141, 0.062), which meets Rec. 2020 standards for ultra-high-definition displays.
Collapse
Affiliation(s)
- Qianqian Huang
- Key Laboratory of Automobile Materials MOE, School of Materials Science & Engineering, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun, China
| | - Wenxu Yin
- Key Laboratory of Automobile Materials MOE, School of Materials Science & Engineering, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun, China
| | - Bo Gao
- Key Laboratory of Automobile Materials MOE, School of Materials Science & Engineering, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun, China
| | - Qingsen Zeng
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, China
| | - Dong Yao
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, China
| | - Hao Zhang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, China
| | - Yinghe Zhao
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei, China
| | - Weijia Zheng
- Department of Chemistry, University of Victoria, Victoria, BC, Canada.
| | - Jiaqi Zhang
- Key Laboratory of Automobile Materials MOE, School of Materials Science & Engineering, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun, China
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, China
| | - Xiaoyu Zhang
- Key Laboratory of Automobile Materials MOE, School of Materials Science & Engineering, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun, China.
| | - Andrey L Rogach
- Department of Materials Science and Engineering, and Centre for Functional Photonics (CFP), City University of Hong Kong, Hong Kong S.A.R, China.
| |
Collapse
|
2
|
Sun C, Deng Z, Liu X, Zhang F, Lian K, Zhao Y, Zhang H, Han J, Luo M. Highly efficient and stable Cs 3Mn 0.93Zn 0.07Br 5@SiO 2 for wide color gamut backlight displays. Dalton Trans 2024; 53:2153-2158. [PMID: 38189118 DOI: 10.1039/d3dt03874b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/09/2024]
Abstract
Mn-based perovskites have become a new candidate material for backlight display applications. However, low efficiency and poor stability are the key problems limiting the application of Mn-based perovskites. In this work, Zn-doped and SiO2-encapsulated Cs3MnBr5, denoted as Cs3Mn0.93Zn0.07Br5@SiO2 (CMZBS), was successfully synthesized to improve the photoluminescence quantum yield (PLQY) and stability. After Zn doping, the PLQY increased from 51% to 72% due to the reduction in the energy transfer between [MnBr4]2-. The PLQY can be further improved to 80% after coating SiO2. Compared with Cs3MnBr5 (CMB), CMZBS showed better stability against thermal, air, light, and polar solvents (ethanol and isopropanol). In addition, a white LED (WLED) device with a CIE of (0.323, 0.325) was fabricated by integrating CMZBS and the red phosphor K2SiF6:Mn4+ on a 465 nm blue GaN chip, which exhibited a high luminous efficiency of 92 lm W-1 and excellent stability, demonstrating its great potential application in wide color gamut displays.
Collapse
Affiliation(s)
- Chun Sun
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Zhihui Deng
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Xiaohui Liu
- Key Laboratory of Magnetism and Magnetic Materials Autonomous Region, Baotou Teachers' College, Inner Mongolia University of Science and Technology, 3 Kexue Road, Baotou, 014030, P.R. China
- Zhejiang Ruico Advanced Material Co., Ltd, No. 188 Liangshan Road, Huzhou, 313018, PR China
| | - Fuhao Zhang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Kai Lian
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Yiwei Zhao
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Hu Zhang
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Jiachen Han
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| | - Mingming Luo
- State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China.
- Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, PR China
| |
Collapse
|
3
|
Bi Y, Cao S, Yu P, Du Z, Wang Y, Zheng J, Zou B, Zhao J. Reducing Emission Linewidth of Pure-Blue ZnSeTe Quantum Dots through Shell Engineering toward High Color Purity Light-Emitting Diodes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2303247. [PMID: 37420332 DOI: 10.1002/smll.202303247] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2023] [Revised: 06/19/2023] [Indexed: 07/09/2023]
Abstract
High color purity blue quantum dot light-emitting diodes (QLEDs) have great potential applications in the field of ultra-high-definition display. However, the realization of eco-friendly pure-blue QLEDs with a narrow emission linewidth for high color purity remains a significant challenge. Herein, a strategy for fabricating high color purity and efficient pure-blue QLEDs based on ZnSeTe/ZnSe/ZnS quantum dots (QDs) is presented. It is found that by finely controlling the internal ZnSe shell thickness of the QDs, the emission linewidth can be narrowed by reducing the exciton-longitudinal optical phonon coupling and trap states in the QDs. Additionally, the regulation of the QD shell thickness can suppress the Förster energy transfer between QDs in the QLED emission layer, which will help to reduce the emission linewidth of the device. As a result, the fabricated pure-blue (452 nm) ZnSeTe QLED with ultra-narrow electroluminescence linewidth (22 nm) exhibit high color purity with the Commission Internationale de l'Eclairage chromatic coordinates of (0.148, 0.042) and considerable external quantum efficiency (18%). This work provides a demonstration of the preparation of pure-blue eco-friendly QLEDs with both high color purity and efficiency, and it is believed that it will accelerate the application process of eco-friendly QLEDs in ultra-high-definition displays.
Collapse
Affiliation(s)
- Yuhe Bi
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, China
| | - Sheng Cao
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, China
| | - Peng Yu
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, China
| | - Zhentao Du
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, China
| | - Yunjun Wang
- Suzhou Xingshuo Nanotech Co., Ltd. (Mesolight), Suzhou, 215123, China
| | - Jinju Zheng
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, China
| | - Bingsuo Zou
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, China
| | - Jialong Zhao
- School of Physical Science and Technology, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, China
| |
Collapse
|
4
|
Liška P, Musálek T, Šamořil T, Kratochvíl M, Matula R, Horák M, Nedvěd M, Urban J, Planer J, Rovenská K, Dvořák P, Kolíbal M, Křápek V, Kalousek R, Šikola T. Correlative Imaging of Individual CsPbBr 3 Nanocrystals: Role of Isolated Grains in Photoluminescence of Perovskite Polycrystalline Thin Films. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2023; 127:12404-12413. [PMID: 37405362 PMCID: PMC10316395 DOI: 10.1021/acs.jpcc.3c03056] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/09/2023] [Revised: 06/06/2023] [Indexed: 07/06/2023]
Abstract
We report on the optical properties of a CsPbBr3 polycrystalline thin film on a single grain level. A sample composed of isolated nanocrystals (NCs) mimicking the properties of the polycrystalline thin film grains that can be individually probed by photoluminescence spectroscopy was prepared. These NCs were analyzed using correlative microscopy allowing the examination of structural, chemical, and optical properties from identical sites. Our results show that the stoichiometry of the CsPbBr3 NCs is uniform and independent of the NCs' morphology. The photoluminescence (PL) peak emission wavelength is slightly dependent on the dimensions of NCs, with a blue shift up to 9 nm for the smallest analyzed NCs. The magnitude of the blueshift is smaller than the emission line width, thus detectable only by high-resolution PL mapping. By comparing the emission energies obtained from the experiment and a rigorous effective mass model, we can fully attribute the observed variations to the size-dependent quantum confinement effect.
Collapse
Affiliation(s)
- Petr Liška
- Institute
of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology, Technická 2896/2, 616 69 Brno, Czech Republic
- Central
European Institute of Technology, Brno University
of Technology, Purkyňova
123, 612 00 Brno, Czech Republic
| | - Tomáš Musálek
- Institute
of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology, Technická 2896/2, 616 69 Brno, Czech Republic
| | - Tomáš Šamořil
- Institute
of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology, Technická 2896/2, 616 69 Brno, Czech Republic
- Central
European Institute of Technology, Brno University
of Technology, Purkyňova
123, 612 00 Brno, Czech Republic
- Tescan
Orsay Holding, a.s, Libušina
tř. 21, Brno 623
00, Czech Republic
| | - Matouš Kratochvíl
- Faculty
of Chemistry, Brno University of Technology, Purkyňova 464/118, 612 00 Brno, Czech Republic
| | - Radovan Matula
- Institute
of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology, Technická 2896/2, 616 69 Brno, Czech Republic
| | - Michal Horák
- Institute
of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology, Technická 2896/2, 616 69 Brno, Czech Republic
- Central
European Institute of Technology, Brno University
of Technology, Purkyňova
123, 612 00 Brno, Czech Republic
| | - Matěj Nedvěd
- Institute
of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology, Technická 2896/2, 616 69 Brno, Czech Republic
| | - Jakub Urban
- Institute
of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology, Technická 2896/2, 616 69 Brno, Czech Republic
| | - Jakub Planer
- Central
European Institute of Technology, Brno University
of Technology, Purkyňova
123, 612 00 Brno, Czech Republic
| | - Katarína Rovenská
- Central
European Institute of Technology, Brno University
of Technology, Purkyňova
123, 612 00 Brno, Czech Republic
| | - Petr Dvořák
- Institute
of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology, Technická 2896/2, 616 69 Brno, Czech Republic
- Central
European Institute of Technology, Brno University
of Technology, Purkyňova
123, 612 00 Brno, Czech Republic
| | - Miroslav Kolíbal
- Institute
of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology, Technická 2896/2, 616 69 Brno, Czech Republic
- Central
European Institute of Technology, Brno University
of Technology, Purkyňova
123, 612 00 Brno, Czech Republic
| | - Vlastimil Křápek
- Institute
of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology, Technická 2896/2, 616 69 Brno, Czech Republic
- Central
European Institute of Technology, Brno University
of Technology, Purkyňova
123, 612 00 Brno, Czech Republic
| | - Radek Kalousek
- Institute
of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology, Technická 2896/2, 616 69 Brno, Czech Republic
| | - Tomáš Šikola
- Institute
of Physical Engineering, Faculty of Mechanical Engineering, Brno University of Technology, Technická 2896/2, 616 69 Brno, Czech Republic
- Central
European Institute of Technology, Brno University
of Technology, Purkyňova
123, 612 00 Brno, Czech Republic
| |
Collapse
|
5
|
Gong XK, Zhang XS, Li Q, Liu L, Zhang YM, Li C, Kong LN, Xu JP, Li L. Surface Reconstruction of Lead-Free Perovskite Cs 2Ag 0.6Na 0.4InCl 6:Bi by Hydroxylation with Blue-Light-Excited Performance. J Colloid Interface Sci 2023; 648:865-875. [PMID: 37327629 DOI: 10.1016/j.jcis.2023.06.033] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/01/2023] [Revised: 06/01/2023] [Accepted: 06/06/2023] [Indexed: 06/18/2023]
Abstract
Molecular surface reconfiguration strategies have been instrumental to performance improvements of halide perovskite photovoltaic applications in recent years. However, research into the optical properties of the lead-free double perovskite Cs2AgInCl6 on the complex reconstructed surface is still lacking. Here, blue-light excitation in double perovskite Cs2Na0.4Ag0.6InCl6 with Bi doping has been successfully achieved by excess KBr coating and ethanol-driven structural reconstruction. Ethanol drives the formation of hydroxylated Cs2-yKyAg0.6Na0.4In0.8Bi0.2Cl6-yBry in the Cs2Ag0.6Na0.4In0.8Bi0.2Cl6@xKBr interface layer. The hydroxyl group adsorbed on the interstitial sites of the double perovskite structure induces a transfer of local space electrons to the [AgCl6] and [InCl6] octahedral regions, enabling them to be excited with blue light (467 nm). The passivation of KBr shell reduces the non-radiative transition probability of excitons. Blue-light-excited flexible photoluminescence devices based on hydroxylated Cs2Ag0.6Na0.4In0.8Bi0.2Cl6@16KBr are fabricated. The application of hydroxylated Cs2Ag0.6Na0.4In0.8Bi0.2Cl6@16KBr as down-shift layer in GaAs photovoltaic cell module can increase its power conversion efficiency by 3.34%. The surface reconstruction strategy provides a new way to optimize the performance of lead-free double perovskite.
Collapse
Affiliation(s)
- Xiao-Kai Gong
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education and Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, Tianjin 300384, China
| | - Xiao-Song Zhang
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education and Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, Tianjin 300384, China.
| | - Qian Li
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education and Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, Tianjin 300384, China
| | - Long Liu
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education and Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, Tianjin 300384, China
| | - Yue-Ming Zhang
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education and Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, Tianjin 300384, China
| | - Chao Li
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education and Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, Tianjin 300384, China
| | - Li-Na Kong
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education and Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, Tianjin 300384, China
| | - Jian-Ping Xu
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education and Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, Tianjin 300384, China
| | - Lan Li
- School of Materials Science and Engineering, Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education and Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, Tianjin University of Technology, Tianjin 300384, China
| |
Collapse
|
6
|
Sun R, Zhou D, Ding Y, Wang Y, Wang Y, Zhuang X, Liu S, Ding N, Wang T, Xu W, Song H. Efficient single-component white light emitting diodes enabled by lanthanide ions doped lead halide perovskites via controlling Förster energy transfer and specific defect clearance. LIGHT, SCIENCE & APPLICATIONS 2022; 11:340. [PMID: 36470864 PMCID: PMC9722690 DOI: 10.1038/s41377-022-01027-9] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2022] [Revised: 10/10/2022] [Accepted: 10/25/2022] [Indexed: 05/25/2023]
Abstract
Currently, a major challenge for metal-halide perovskite light emitting diodes (LEDs) is to achieve stable and efficient white light emission due to halide ion segregation. Herein, we report a promising method to fabricate white perovskite LEDs using lanthanide (Ln3+) ions doped CsPbCl3 perovskite nanocrystals (PeNCs). First, K+ ions are doped into the lattice to tune the perovskite bandgap by partially substituting Cs+ ions, which are well matched to the transition energy of some Ln3+ ions from the ground state to the excited state, thereby greatly improving the Förster energy transfer efficiency from excitons to Ln3+ ions. Then, creatine phosphate (CP), a phospholipid widely found in organisms, serves as a tightly binding surface-capping multi-functional ligand which regulates the film formation and enhances the optical and electrical properties of PeNC film. Consequently, the Eu3+ doped PeNCs based-white LEDs show a peak luminance of 1678 cd m-2 and a maximum external quantum efficiency (EQE) of 5.4%, demonstrating excellent performance among existing white PeNC LEDs from a single chip. Furthermore, the method of bandgap modulation and the defect passivation were generalized to other Ln3+ ions doped perovskite LEDs and successfully obtained improved electroluminescence (EL). This work demonstrates the comprehensive and universal strategies in the realization of highly efficient and stable white LEDs via single-component Ln3+ ions doped PeNCs, which provides an optimal solution for the development of low-cost and simple white perovskite LEDs.
Collapse
Affiliation(s)
- Rui Sun
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Donglei Zhou
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China.
| | - Yujiao Ding
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Yue Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Yuqi Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Xinmeng Zhuang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Shuainan Liu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Nan Ding
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Tianyuan Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Wen Xu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Hongwei Song
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China.
| |
Collapse
|
7
|
Ekanayaka TK, Richmond D, McCormick M, Nandyala SR, Helfrich HC, Sinitskii A, Pikal JM, Ilie CC, Dowben PA, Yost AJ. Surface Versus Bulk State Transitions in Inkjet-Printed All-Inorganic Perovskite Quantum Dot Films. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3956. [PMID: 36432242 PMCID: PMC9697151 DOI: 10.3390/nano12223956] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/28/2022] [Revised: 11/05/2022] [Accepted: 11/08/2022] [Indexed: 06/16/2023]
Abstract
The anion exchange of the halides, Br and I, is demonstrated through the direct mixing of two pure perovskite quantum dot solutions, CsPbBr3 and CsPbI3, and is shown to be both facile and result in a completely alloyed single phase mixed halide perovskite. Anion exchange is also observed in an interlayer printing method utilizing the pure, unalloyed perovskite solutions and a commercial inkjet printer. The halide exchange was confirmed by optical absorption spectroscopy, photoluminescent spectroscopy, X-ray diffraction, and X-ray photoemission spectroscopy characterization and indicates that alloying is thermodynamically favorable, while the formation of a clustered alloy is not favored. Additionally, a surface-to-bulk photoemission core level transition is observed for the Cs 4d photoemission feature, which indicates that the electronic structure of the surface is different from the bulk. Time resolved photoluminescence spectroscopy indicates the presence of multiple excitonic decay features, which is argued to originate from states residing at surface and bulk environments.
Collapse
Affiliation(s)
- Thilini K. Ekanayaka
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
| | - Dylan Richmond
- Department of Physics, State University of New York-Oswego, Oswego, NY 13126, USA
| | - Mason McCormick
- Department of Chemistry, University of Nebraska-Lincoln, Lincoln, NE 68588-0304, USA
| | - Shashank R. Nandyala
- Department of Electrical and Computer Engineering, University of Wyoming, Laramie, WY 82071, USA
| | - Halle C. Helfrich
- Department of Physics, Oklahoma State University, Stillwater, OK 74078, USA
- Department of Physics, Pittsburg State University, Pittsburg, KS 66762, USA
| | - Alexander Sinitskii
- Department of Chemistry, University of Nebraska-Lincoln, Lincoln, NE 68588-0304, USA
| | - Jon M. Pikal
- Department of Electrical and Computer Engineering, University of Wyoming, Laramie, WY 82071, USA
| | - Carolina C. Ilie
- Department of Physics, State University of New York-Oswego, Oswego, NY 13126, USA
| | - Peter A. Dowben
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
| | - Andrew J. Yost
- Department of Physics, Oklahoma State University, Stillwater, OK 74078, USA
- Oklahoma Photovoltaic Research Institute, Oklahoma State University, Stillwater, OK 74078, USA
| |
Collapse
|
8
|
Liu Z, Zito J, Ghini M, Goldoni L, Prato M, Bahmani Jalali H, Infante I, De Trizio L, Manna L. Alloying Bi-Doped Cs 2Ag 1-xNa xInCl 6 Nanocrystals with K + Cations Modulates Surface Ligands Density and Photoluminescence Efficiency. NANO LETTERS 2022; 22:8567-8573. [PMID: 36288498 PMCID: PMC9650775 DOI: 10.1021/acs.nanolett.2c03112] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2022] [Revised: 10/18/2022] [Indexed: 05/26/2023]
Abstract
We show how, in the synthesis of yellow-emissive Bi-doped Cs2Ag1-xNaxInCl6 double perovskite nanocrystals (NCs), preventing the transient formation of Ag0 particles increases the photoluminescence quantum yield (PLQY) of the NCs from ∼30% to ∼60%. Calculations indicate that the presence of even a single Ag0 species on the surface of a NC introduces deep trap states. The PL efficiency of these NCs is further increased to ∼70% by partial replacement of Na+ with K+ ions, up to a 7% K content, due to a lattice expansion that promotes a more favorable ligands packing on the NC surface, hence better surface passivation. A further increase in K+ lowers the PLQY, due to both the activation of nonradiative quenching channels and a lower oscillator strength of the BiCl6→AgCl6 transition (through which PL emission occurs). The work indicates how a deeper understanding of parameters influencing carrier trapping/relaxation can boost the PLQY of double perovskites NCs.
Collapse
Affiliation(s)
- Zheming Liu
- Nanochemistry, Functional Nanosystems, Materials Characterization, and Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
- Dipartimento
di Chimica e Chimica Industriale, Università
degli Studi di Genova, Via Dodecaneso 31, 16146 Genova, Italy
| | - Juliette Zito
- Nanochemistry, Functional Nanosystems, Materials Characterization, and Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
- Dipartimento
di Chimica e Chimica Industriale, Università
degli Studi di Genova, Via Dodecaneso 31, 16146 Genova, Italy
| | - Michele Ghini
- Nanochemistry, Functional Nanosystems, Materials Characterization, and Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Luca Goldoni
- Nanochemistry, Functional Nanosystems, Materials Characterization, and Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Mirko Prato
- Nanochemistry, Functional Nanosystems, Materials Characterization, and Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Houman Bahmani Jalali
- Nanochemistry, Functional Nanosystems, Materials Characterization, and Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Ivan Infante
- Nanochemistry, Functional Nanosystems, Materials Characterization, and Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Luca De Trizio
- Nanochemistry, Functional Nanosystems, Materials Characterization, and Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Liberato Manna
- Nanochemistry, Functional Nanosystems, Materials Characterization, and Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| |
Collapse
|
9
|
Kim T, Suh Y, Kim K, Kim H, Park J. Synthesis of homogeneous and bright deep blue
CsPbBr
3
perovskite nanoplatelets with solidified surface for optoelectronic material. B KOREAN CHEM SOC 2022. [DOI: 10.1002/bkcs.12580] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Taeyun Kim
- School of Energy and Chemical Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea
| | - Yo‐Han Suh
- School of Energy and Chemical Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea
| | - Kangyong Kim
- School of Energy and Chemical Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea
| | - Hyeonjung Kim
- School of Energy and Chemical Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea
| | - Jongnam Park
- School of Energy and Chemical Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea
- Department of Biomedical Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea
| |
Collapse
|
10
|
Otero-Martínez C, Ye J, Sung J, Pastoriza-Santos I, Pérez-Juste J, Xia Z, Rao A, Hoye RLZ, Polavarapu L. Colloidal Metal-Halide Perovskite Nanoplatelets: Thickness-Controlled Synthesis, Properties, and Application in Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107105. [PMID: 34775643 DOI: 10.1002/adma.202107105] [Citation(s) in RCA: 39] [Impact Index Per Article: 19.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2021] [Revised: 11/09/2021] [Indexed: 05/20/2023]
Abstract
Colloidal metal-halide perovskite nanocrystals (MHP NCs) are gaining significant attention for a wide range of optoelectronics applications owing to their exciting properties, such as defect tolerance, near-unity photoluminescence quantum yield, and tunable emission across the entire visible wavelength range. Although the optical properties of MHP NCs are easily tunable through their halide composition, they suffer from light-induced halide phase segregation that limits their use in devices. However, MHPs can be synthesized in the form of colloidal nanoplatelets (NPls) with monolayer (ML)-level thickness control, exhibiting strong quantum confinement effects, and thus enabling tunable emission across the entire visible wavelength range by controlling the thickness of bromide or iodide-based lead-halide perovskite NPls. In addition, the NPls exhibit narrow emission peaks, have high exciton binding energies, and a higher fraction of radiative recombination compared to their bulk counterparts, making them ideal candidates for applications in light-emitting diodes (LEDs). This review discusses the state-of-the-art in colloidal MHP NPls: synthetic routes, thickness-controlled synthesis of both organic-inorganic hybrid and all-inorganic MHP NPls, their linear and nonlinear optical properties (including charge-carrier dynamics), and their performance in LEDs. Furthermore, the challenges associated with their thickness-controlled synthesis, environmental and thermal stability, and their application in making efficient LEDs are discussed.
Collapse
Affiliation(s)
- Clara Otero-Martínez
- CINBIO, Universidade de Vigo, Materials Chemistry and Physics Group, Department of Physical Chemistry, Campus Universitario Lagoas, Marcosende, Vigo, 36310, Spain
- CINBIO, Universidade de Vigo, Deparment of Physical Chemistry, Campus Universitario Lagoas, Marcosende, Vigo, 36310, Spain
- Galicia Sur Health Research Institute (IIS Galicia Sur). SERGAS-UVIGO, Vigo, 36310, Spain
| | - Junzhi Ye
- Cavendish Laboratory, University of Cambridge, 19 JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Jooyoung Sung
- Cavendish Laboratory, University of Cambridge, 19 JJ Thomson Avenue, Cambridge, CB3 0HE, UK
- Department of Emerging Materials Science, DGIST, Daegu, 42988, Republic of Korea
| | - Isabel Pastoriza-Santos
- CINBIO, Universidade de Vigo, Deparment of Physical Chemistry, Campus Universitario Lagoas, Marcosende, Vigo, 36310, Spain
- Galicia Sur Health Research Institute (IIS Galicia Sur). SERGAS-UVIGO, Vigo, 36310, Spain
| | - Jorge Pérez-Juste
- CINBIO, Universidade de Vigo, Deparment of Physical Chemistry, Campus Universitario Lagoas, Marcosende, Vigo, 36310, Spain
- Galicia Sur Health Research Institute (IIS Galicia Sur). SERGAS-UVIGO, Vigo, 36310, Spain
| | - Zhiguo Xia
- School of Physics and Optoelectronics, State Key Laboratory of Luminescent Materials and Devices and Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, South China University of Technology, Guangzhou, Guangdong, 510641, P. R. China
| | - Akshay Rao
- Cavendish Laboratory, University of Cambridge, 19 JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Robert L Z Hoye
- Department of Materials, Imperial College London, Exhibition Road, London, SW7 2AZ, UK
| | - Lakshminarayana Polavarapu
- CINBIO, Universidade de Vigo, Materials Chemistry and Physics Group, Department of Physical Chemistry, Campus Universitario Lagoas, Marcosende, Vigo, 36310, Spain
| |
Collapse
|
11
|
Shen W, Yu Y, Zhang W, Chen Y, Zhang J, Yang L, Feng J, Cheng G, Liu L, Chen S. Efficient Pure Blue Light-Emitting Diodes Based on CsPbBr 3 Quantum-Confined Nanoplates. ACS APPLIED MATERIALS & INTERFACES 2022; 14:5682-5691. [PMID: 35073477 DOI: 10.1021/acsami.1c24662] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Exploitation of next-generation blue light-emitting diodes (LEDs) is the foundation of the revolution in lighting and display devices. Development of high-performance blue perovskite LEDs is still challenging. Herein, 4-aminobenzenesulfonic acid (SA) is introduced to passivate blue CsPbBr3 nanoplates (NPLs), reducing the ionic migration via a more stable Pb2+-SO3-- formation, and the trap state density of films shows a 50% reduction. The inevitable Br- vacancy defects after the multistep washing process can be suppressed by a suitable MABr treatment, which can boost the external quantum efficiency (EQE) performance. It should be noted that the coverage of NPL films is another key factor to realize reproducible pure blue electroluminescence (EL). Therefore, we proposed an alternate droplet/spin coating method to improve the coverage and thickness of NPL layer to prevent hole transport layer emission and increase the reproducibility of LED performance and spectra. Furthermore, we designed hole transport layers to decrease the hole transport barrier and improve the energy-level alignment. According to SA passivation, MABr treatment, alternate droplet/spin coating method, and device structure optimization, a CsPbBr3 NPL-based pure blue (0.138, 0.046) LED with 3.18% maximum EQE can be achieved, and the half-lifetime of EL can be enhanced 1.71 times as compared to that of the counterpart LED without SA. Both performance and stability of pure blue NPL LEDs can be greatly improved via ligand passivation, alternate droplet/spin coating method, and device structure optimization, which is a trend to promote the development of pure blue perovskite LEDs in future.
Collapse
Affiliation(s)
- Wei Shen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| | - Ye Yu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| | - Wenzhu Zhang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| | - Yanfeng Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| | - Jianbin Zhang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| | - Liu Yang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| | - Jingting Feng
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| | - Gang Cheng
- Hong Kong Quantum AI Lab Limited, Pak Shek Kok 999077, Hong Kong SAR, China
- HKU Shenzhen Institute of Research and Innovation, Shenzhen 518053, China
| | - Lihui Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| | - Shufen Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, P. R. China
| |
Collapse
|
12
|
Jin G, Liu T, Li Y, Zhou J, Zhang D, Pang P, Ye Z, Xing Z, Xing G, Chen J, Ma D. Low-dimensional phase suppression and defect passivation of quasi-2D perovskites for efficient electroluminescence and low-threshold amplified spontaneous emission. NANOSCALE 2022; 14:919-929. [PMID: 34988562 DOI: 10.1039/d1nr06549a] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Quasi-2D metal halide perovskites are promising candidates for light-emitting applications owing to their large exciton binding energy and strong quantum confinement effect. Usually, quasi-2D perovskites are composed of multiple phases with various numbers of layers (n) of metal halide octahedron sheets, enabling light emission from the lowest-bandgap phase by cascade energy transfer. However, the energy transfer processes are extremely sensitive to the phase distribution and trap density in the quasi-2D perovskite films, and the insufficient energy transfer between different-n phases and the defect-induced traps would result in nonradiative losses. Here, significantly reduced nonradiative losses in the quasi-2D perovskite films are achieved by tailoring the low-dimensional phase components and lowering the density of trap states. Butylammonium bromide (BABr) and potassium thiocyanate (KSCN) are employed to synergistically decrease the nonradiative recombination in the quasi-2D perovskite films of PEABr : CsPbBr3. The incorporation of BABr is found to suppress the formation of the n = 1 phase, while adding KSCN can further reduce the low-n phases, passivate the notorious defects and improve the alignment of the high-n phases. By incorporating appropriate contents of BABr and KSCN, the resultant quasi-2D perovskite films show high photoluminescence quantum yield (PLQY) and highly ordered crystal orientation, which enable not only the green light-emitting diodes (LEDs) with a high external quantum efficiency (EQE) of 16.3%, but also the amplified spontaneous emission (ASE) with a low threshold of 2.6 μJ cm-2. These findings provide a simple and effective strategy to develop high-quality quasi-2D perovskites for LED and laser applications.
Collapse
Affiliation(s)
- Guangrong Jin
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou, Guangdong 510640, China.
- School of Physics and Optoelectronics, South China University of Technology, Guangzhou, Guangdong 510640, China
| | - Tanghao Liu
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau 999078, China.
| | - Yuanzhao Li
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou, Guangdong 510640, China.
- School of Physics and Optoelectronics, South China University of Technology, Guangzhou, Guangdong 510640, China
| | - Jiadong Zhou
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou, Guangdong 510640, China.
| | - Dengliang Zhang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou, Guangdong 510640, China.
| | - Peiyuan Pang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou, Guangdong 510640, China.
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau 999078, China.
| | - Ziqing Ye
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou, Guangdong 510640, China.
| | - Zhaohui Xing
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou, Guangdong 510640, China.
| | - Guichuang Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau 999078, China.
| | - Jiangshan Chen
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou, Guangdong 510640, China.
| | - Dongge Ma
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology, Guangzhou, Guangdong 510640, China.
- School of Physics and Optoelectronics, South China University of Technology, Guangzhou, Guangdong 510640, China
| |
Collapse
|
13
|
Tao J, Zhang H, Bi W, liu X, Fan C, Sun C. Facile synthesis of Mn 2+ doped ultrathin (n=2) NPLs and their application to anti-counterfeiting. Dalton Trans 2022; 51:11021-11028. [DOI: 10.1039/d2dt01102f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Ultrathin 2D perovskite nanoplatelets (NPLs) have many excellent optical properties including narrow absorption and emission spectra and large exciton binding energies. Doping Mn2+ into perovskite NPLs also introduces strong orange...
Collapse
|