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Canimkurbey B, Isik F, Delikanli S, Bozkaya I, Unal E, Isik AT, Dikmen Z, Shabani F, Ozkan I, Piravadili S, Demir HV. Flexible Colloidal Light-Emitting Diodes of Self-Assembled Quantum Well Monolayers. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025:e2502314. [PMID: 40317681 DOI: 10.1002/smll.202502314] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2025] [Revised: 04/07/2025] [Indexed: 05/07/2025]
Abstract
Quasi-2D semiconductor nanocrystals, also known as colloidal quantum wells (CQWs), with their high quantum yield in the visible range, ultra-narrow emission, and in-plane oriented transition dipole moments, provide potentially an excellent platform for flexible light-emitting diodes (f-LEDs). In this study, it is proposed and demonstrated colloidal f-LEDs of a single layer face-down oriented CdSe/CdZnS core/hot injection shell-grown CQWs employed as an emissive monolayer in a flexible platform for the first time. The obtained f-LEDs are shown to be immune to a large number of bending, enabled by the use of only a single emitter layer and their configuration all being face-down in the layer. These f-LEDs exhibit a maximum external quantum efficiency of 14.12%, an intense luminance of ≈33 700 cd m-2, a low turn-on voltage of <2 V, and a highly saturated red color. Here, orienting these CQWs only in face-down configuration is essential to efficient charge injection thanks to its extremely low roughness and increased outcoupling efficiency owing to in-plane oriented transition dipoles. Therefore, these f-LEDs of face-down CQW monolayers, with their excellent luminance properties and stable emission, stand out as exceptional candidates for future advanced flexible display and lighting applications as well as wearables.
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Affiliation(s)
- Betul Canimkurbey
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
- Department of Physics, Polatlı Faculty of Arts and Sciences, Ankara Hacı Bayram Veli University, Ankara, 06900, Turkey
| | - Furkan Isik
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Savas Delikanli
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
- Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Iklim Bozkaya
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Emre Unal
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
- Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Ahmet Tarik Isik
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Zeynep Dikmen
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
- Faculty of Engineering, Department of Biomedical Engineering, Eskisehir Osmangazi University, Eskisehir, 26040, Turkey
| | - Farzan Shabani
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Ilayda Ozkan
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Selin Piravadili
- Material Technologies, The Scientific and Technological Research Council of Turkey (TUBITAK) - Marmara Research Center (MAM), Gebze/Kocaeli, 41470, Türkiye
| | - Hilmi Volkan Demir
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
- Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
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2
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Zeng Y, Yu W, Liu Y, Chen W, Wang Q, Cao F, Wei J, Liu F, Yang X, Li H. Improved Efficiency and Stability in Pure-Red CdSe Nanoplatelet LEDs Enabled by Gradient Alloyed CdSeS/CdZnS Crown/Shell. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2415569. [PMID: 39648527 DOI: 10.1002/adma.202415569] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2024] [Revised: 11/06/2024] [Indexed: 12/10/2024]
Abstract
Anisotropic nanoplatelets (NPLs) possess strong in-plane transition dipole moments and out-of-plane emission, which enable a maximum photon out-coupling efficiency of 40% and a high gain coefficient, making them ideal candidates for light-emitting diodes (LEDs) and lasers. However, the unbalanced surface energy between the side and top facets of NPLs results in poor thermal stability and high susceptibility to ripening at elevated temperatures, which complicates the growth of the shell. To address this issue, a gradient crown (CdSeS) around the CdSe NPLs is designed to stabilize the high energy side facets. Consequently, the gradient alloyed shell (CdZnS) is successfully grown, and the CdSe/CdSeS/CdZnS core/crown/shell NPLs exhibited near-unity photoluminescence quantum yield. The CdSeS/CdZnS crown/shell structure suppressed non-radiative Auger recombinations, achieving a record-low amplification spontaneous emission threshold of 2.11 µJ cm-2 under femtosecond laser excitation. In addition, by selecting the carrier transport layers with matched energy levels, the NPL-LEDs demonstrate a record-high external quantum efficiency of 30.1% in the pure-red range, driven by the 94% in-plane transition dipole moment distribution of NPL film. The NPL-LEDs also exhibited a long operational lifetime of T95 > 600 h at a luminance of 1000 cd m-2.
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Affiliation(s)
- Yicheng Zeng
- Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Wenke Yu
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, China
| | - Yuan Liu
- State Key Laboratory of Molecular Reaction Dynamics and Dynamics Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning, 116023, China
| | - Weiwei Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Qingya Wang
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Zhuhai, 519088, China
| | - Fan Cao
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, China
| | - Jing Wei
- Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Fangze Liu
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Zhuhai, 519088, China
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, 200072, China
| | - Hongbo Li
- Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
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3
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Zhu Y, Lu X, Qiu J, Bai P, Hu A, Yao Y, Liu Q, Li Y, Yu W, Li Y, Jin W, Zhu X, Deng Y, Liu Z, Gao P, Zhao X, Zhu Y, Zhou L, Jin Y, Gao Y. High-Performance Green and Blue Light-Emitting Diodes Enabled by CdZnSe/ZnS Core/Shell Colloidal Quantum Wells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2414631. [PMID: 39654360 DOI: 10.1002/adma.202414631] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/26/2024] [Revised: 11/27/2024] [Indexed: 02/13/2025]
Abstract
The unique anisotropic properties of colloidal quantum wells (CQWs) make them highly promising as components in nanocrystal-based devices. However, the limited performance of green and blue light-emitting diodes (LEDs) based on CQWs has impeded their practical applications. In this study, alloy CdZnSe core CQWs with precise compositions are tailored via direct cation exchange (CE) from CdSe CQWs with specific size, shape, and crystal structure and utilized hot-injection shell (HIS) growth to synthesize CdZnSe/ZnS core/shell CQWs exhibiting exceptional optoelectronic characteristics. This approach enabled the successful fabrication green and blue LEDs manifesting superior performance compared to previously reported solution-processed CQW-LEDs. The devices demonstrated a remarkable peak external quantum efficiency (20.4% for green and 10.6% for blue), accompanied by a maximum brightness 347,683 cd m-2 for green and 38,063 cd m-2 for blue. The high-performance represents a significant advancement for nanocrystal-based light-emitting diodes (Nc-LEDs) incorporating anisotropic nanocrystals. This work provides a comprehensive synthesis strategy for enhancing the efficiency of Nc-LEDs utilizing anisotropic nanocrystals.
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Affiliation(s)
- Yunke Zhu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Xiuyuan Lu
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Chemistry, Zhejiang University, Hangzhou, 310058, China
| | - Jingjing Qiu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Peng Bai
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- BOE Technology Group Co. Ltd., Beijing, 100176, China
| | - An Hu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Yige Yao
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Qinyun Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Yang Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Wenjin Yu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Yaolong Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Wangxiao Jin
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Chemistry, Zhejiang University, Hangzhou, 310058, China
| | - Xitong Zhu
- Key Laboratory of Excited-State Materials of Zhejiang Province, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Chemistry, Zhejiang University, Hangzhou, 310058, China
| | - Yunzhou Deng
- Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE, UK
| | - Zhetong Liu
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China
| | - Peng Gao
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China
| | - XiaoFei Zhao
- BOE Technology Group Co. Ltd., Beijing, 100176, China
| | - Youqin Zhu
- BOE Technology Group Co. Ltd., Beijing, 100176, China
| | - Li Zhou
- BOE Technology Group Co. Ltd., Beijing, 100176, China
| | - Yizheng Jin
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, China
| | - Yunan Gao
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, 226010, China
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4
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Fang W, Liu B. Approaches to Enhance the Stability of Colloidal Quantum Well Light-Emitting Diodes. RECENT PATENTS ON NANOTECHNOLOGY 2025; 19:313-318. [PMID: 38204234 DOI: 10.2174/0118722105280923231215063047] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Revised: 11/10/2023] [Accepted: 11/29/2023] [Indexed: 01/12/2024]
Abstract
Colloidal quantum well light-emitting diodes (CQW-LEDs) show great potential for applications in displays and lighting due to their advantages, such as high color purity, spectral tunability and compatibility with flexible electronics, as demonstrated in relevant papers and patents. So far, attention has been mainly devoted to pursuing device efficiencies rather than achieving device stability, leading to the fact that the lifetime of CQW-LEDs is far from the demand for practical applications. In this perspective, various approaches to enhance the stability of CQW-LEDs have been discussed, including the synthesis of stable CQW materials, the selection of stable transport layers, the improvement of charge balance, and the introduction of advanced encapsulation techniques.
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Affiliation(s)
- Wenhui Fang
- Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Baiquan Liu
- Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
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5
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Ibrahem MA, Waris M, Miah MR, Shabani F, Canimkurbey B, Unal E, Delikanli S, Demir HV. Orientation-Dependent Photoconductivity of Quasi-2D Nanocrystal Self-Assemblies: Face-Down, Edge-Up Versus Randomly Oriented Quantum Wells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2401423. [PMID: 38770984 DOI: 10.1002/smll.202401423] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/22/2024] [Revised: 04/30/2024] [Indexed: 05/22/2024]
Abstract
Here, strongly orientation-dependent lateral photoconductivity of a CdSe monolayer colloidal quantum wells (CQWs) possessing short-chain ligands is reported. A controlled liquid-air self-assembly technique is utilized to deliberately engineer the alignments of CQWs into either face-down (FO) or edge-up (EO) orientation on the substrate as opposed to randomly oriented (RO) CQWs prepared by spin-coating. Adapting planar configuration metal-semiconductor-metal (MSM) photodetectors, it is found that lateral conductivity spans ≈2 orders of magnitude depending on the orientation of CQWs in the film in the case of utilizing short ligands. The long native ligands of oleic acid (OA) are exchanged with short-chain ligands of 2-ethylhexane-1-thiol (EHT) to reduce the inter-platelet distance, which significantly improved the photoresponsivity from 4.16, 0.58, and 4.79 mA W-1 to 528.7, 6.17, and 94.2 mA W-1, for the MSM devices prepared with RO, FO, and EO, before and after ligands exchange, respectively. Such CQW orientation control profoundly impacts the photodetector performance also in terms of the detection speed (0.061 s/0.074 s for the FO, 0.048 s/0.060 s for the EO compared to 0.10 s/0.16 s for the RO, for the rise and decay time constants, respectively) and the detectivity (1.7 × 1010, 2.3 × 1011, and 7.5 × 1011 Jones for the FO, EO, and RO devices, respectively) which can be further tailored for the desired optoelectronic device applications. Attributed to charge transportation in colloidal films being proportional to the number of hopping steps, these findings indicate that the solution-processed orientation of CQWs provides the ability to tune the photoconductivity of CQWs with short ligands as another degree of freedom to exploit and engineer their absorptive devices.
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Affiliation(s)
- Mohammed A Ibrahem
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology and The National Nanotechnology Research Center, Bilkent University, Ankara, 06800, Turkey
- Laser Science and Technology Branch, Applied Sciences Department, University of Technology, Baghdad, 10066, Iraq
| | - Mohsin Waris
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology and The National Nanotechnology Research Center, Bilkent University, Ankara, 06800, Turkey
| | - Md Rumon Miah
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology and The National Nanotechnology Research Center, Bilkent University, Ankara, 06800, Turkey
| | - Farzan Shabani
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology and The National Nanotechnology Research Center, Bilkent University, Ankara, 06800, Turkey
| | - Betul Canimkurbey
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology and The National Nanotechnology Research Center, Bilkent University, Ankara, 06800, Turkey
- Serefeddin Health Services Vocational School, Central Research Laboratory, Amasya University, Amasya, 05100, Turkey
| | - Emre Unal
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology and The National Nanotechnology Research Center, Bilkent University, Ankara, 06800, Turkey
| | - Savas Delikanli
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology and The National Nanotechnology Research Center, Bilkent University, Ankara, 06800, Turkey
| | - Hilmi Volkan Demir
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology and The National Nanotechnology Research Center, Bilkent University, Ankara, 06800, Turkey
- Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
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6
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Liang X, Durmusoglu EG, Lunina M, Hernandez-Martinez PL, Valuckas V, Yan F, Lekina Y, Sharma VK, Yin T, Ha ST, Shen ZX, Sun H, Kuznetsov A, Demir HV. Near-Unity Emitting, Widely Tailorable, and Stable Exciton Concentrators Built from Doubly Gradient 2D Semiconductor Nanoplatelets. ACS NANO 2023; 17:19981-19992. [PMID: 37610378 PMCID: PMC10603796 DOI: 10.1021/acsnano.3c05125] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2023] [Accepted: 08/11/2023] [Indexed: 08/24/2023]
Abstract
The strength of electrostatic interactions (EIs) between electrons and holes within semiconductor nanocrystals profoundly affects the performance of their optoelectronic systems, and different optoelectronic devices demand distinct EI strength of the active medium. However, achieving a broad range and fine-tuning of the EI strength for specific optoelectronic applications is a daunting challenge, especially in quasi two-dimensional core-shell semiconductor nanoplatelets (NPLs), as the epitaxial growth of the inorganic shell along the direction of the thickness that solely contributes to the quantum confined effect significantly undermines the strength of the EI. Herein we propose and demonstrate a doubly gradient (DG) core-shell architecture of semiconductor NPLs for on-demand tailoring of the EI strength by controlling the localized exciton concentration via in-plane architectural modulation, demonstrated by a wide tuning of radiative recombination rate and exciton binding energy. Moreover, these exciton-concentration-engineered DG NPLs also exhibit a near-unity quantum yield, high photo- and thermal stability, and considerably suppressed self-absorption. As proof-of-concept demonstrations, highly efficient color converters and high-performance light-emitting diodes (external quantum efficiency: 16.9%, maximum luminance: 43,000 cd/m2) have been achieved based on the DG NPLs. This work thus provides insights into the development of high-performance colloidal optoelectronic device applications.
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Affiliation(s)
- Xiao Liang
- LUMINOUS!
Center of Excellence for Semiconductor Lighting and Displays, The
Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Emek G. Durmusoglu
- LUMINOUS!
Center of Excellence for Semiconductor Lighting and Displays, The
Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- Division
of Physics and Applied Physics, School of Physical and Mathematical
Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Maria Lunina
- Interdisciplinary
Graduate Program, Nanyang Technological
University, Singapore, 637371, Singapore
| | - Pedro Ludwig Hernandez-Martinez
- LUMINOUS!
Center of Excellence for Semiconductor Lighting and Displays, The
Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Vytautas Valuckas
- Institute
of Materials Research and Engineering, A*STAR (Agency for Science,
Technology and Research), 2 Fusionopolis Way, #08-03 Innovis, Singapore, 138634, Singapore
| | - Fei Yan
- LUMINOUS!
Center of Excellence for Semiconductor Lighting and Displays, The
Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yulia Lekina
- Division
of Physics and Applied Physics, School of Physical and Mathematical
Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Vijay Kumar Sharma
- LUMINOUS!
Center of Excellence for Semiconductor Lighting and Displays, The
Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Tingting Yin
- Division
of Physics and Applied Physics, School of Physical and Mathematical
Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Son Tung Ha
- Institute
of Materials Research and Engineering, A*STAR (Agency for Science,
Technology and Research), 2 Fusionopolis Way, #08-03 Innovis, Singapore, 138634, Singapore
| | - Ze Xiang Shen
- Division
of Physics and Applied Physics, School of Physical and Mathematical
Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Handong Sun
- Division
of Physics and Applied Physics, School of Physical and Mathematical
Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Arseniy Kuznetsov
- Institute
of Materials Research and Engineering, A*STAR (Agency for Science,
Technology and Research), 2 Fusionopolis Way, #08-03 Innovis, Singapore, 138634, Singapore
| | - Hilmi Volkan Demir
- LUMINOUS!
Center of Excellence for Semiconductor Lighting and Displays, The
Photonics Institute, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- Division
of Physics and Applied Physics, School of Physical and Mathematical
Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- UNAM—Institute
of Materials Science and Nanotechnology, The National Nanotechnology
Research Center, Department of Electrical and Electronics Engineering,
Department of Physics, Bilkent University, Bilkent, Ankara 06800,Turkey
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7
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Dabard C, Po H, Fu N, Makke L, Lehouelleur H, Curti L, Xu XZ, Lhuillier E, Diroll BT, Ithurria S. Expanding the color palette of bicolor-emitting nanocrystals. NANOSCALE 2023; 15:14651-14658. [PMID: 37622447 DOI: 10.1039/d3nr03235c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/26/2023]
Abstract
Owing to their bright and tunable luminescence spectra, nanocrystals appear as a unique playground for light source design. Displays and lighting require white light sources that combine several narrow lines. As Kasha's rule prevents the emission of hot carriers, blends of multiple nanocrystal populations are currently the obvious strategy for broad-band source design. However, a few reports suggest that bicolor emission can also be obtained from a single particle even under weak excitation if a careful design of the exciton scattering mechanism sufficiently slows down its relaxation pathways. A key challenge remains to maintain quantum confinement for color tunability in the same structure, while simultaneously achieving a large size to leverage the critical, slower exciton diffusion or relaxation down to the ground state. Herein, we demonstrate that 2D nanoplatelets offer an original opportunity for the design of confined and large heterostructures. We demonstrate that bicolor emission is not limited to green-red pair and show that blue-yellow and purple-green emissions can be obtained from CdSe/CdTe/CdSe core/crown/crown and CdSe/CdS core/crown heterostructures, respectively.
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Affiliation(s)
- Corentin Dabard
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France.
| | - Hong Po
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France.
| | - Ningyuan Fu
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France.
| | - Lina Makke
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France.
| | - Henri Lehouelleur
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France.
| | - Leonardo Curti
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France.
| | - Xiang Zhen Xu
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France.
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Benjamin T Diroll
- Center for Nanoscale Materials, Argonne National Laboratory, 9700 S. Cass Avenue, Lemont, Illinois 60439, USA
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France.
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8
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Liu H, Chen P, Zhang X, Wang X, He T, Chen R. Lateral surface passivation of CdSe nanoplatelets through crown management. NANOSCALE 2023; 15:14140-14145. [PMID: 37584662 DOI: 10.1039/d3nr03133k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/17/2023]
Abstract
Two-dimensional colloidal CdSe nanoplatelets (NPLs) have been considered as ideal emitting materials for high performance light-emitting devices due to their excellent optical properties. However, the understanding of defect related radiative and nonradiative recombination centers in CdSe NPLs is still far from sufficient, especially their physical distribution locations. In this work, CdSe core and CdSe/CdS core/crown NPLs have been successfully synthesized and their optical properties have been characterized by laser spectroscopies. It is found that the photoluminescence quantum yield of CdSe NPLs is improved by a factor of 4 after the growth of the CdS crown. At low temperatures, the change in the ratio of low and high energy emission intensities from NPLs suggests that the radiative recombination centers are mainly located on the lateral surface of the samples. This finding is further confirmed by the surface passivation experiment. Meanwhile, the nonradiative recombination centers of NPLs located on the lateral surface are also confirmed by ligand exchange. These results demonstrate the importance of understanding the optical properties of the lateral surface of NPLs, which are important for the design of material structures for optoelectronic applications.
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Affiliation(s)
- Huan Liu
- Harbin Institute of Technology, Harbin 150001, China
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
| | - Peixian Chen
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Xuanyu Zhang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
| | - Xiongbin Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
| | - Tingchao He
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Rui Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
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9
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Chen R, Wang Z, Pang T, Teng Q, Li C, Jiang N, Zheng S, Zhang R, Zheng Y, Chen D, Yuan F. Ultra-Narrow-Bandwidth Deep-Red Electroluminescence Based on Green Plant-Derived Carbon Dots. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2302275. [PMID: 37228040 DOI: 10.1002/adma.202302275] [Citation(s) in RCA: 26] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/10/2023] [Revised: 05/11/2023] [Indexed: 05/27/2023]
Abstract
Deep-red light-emitting diodes (DR-LEDs, >660 nm) with high color-purity and narrow-bandwidth emission are promising for full-color displays and solid-state lighting applications. Currently, the DR-LEDs are mainly based on conventional emitters such as organic materials and heavy-metal based quantum dots (QDs) and perovskites. However, the organic materials always suffer from the complicated synthesis, inferior color purity with full-width at half-maximum (FWHM) more than 40 nm, and the QDs and perovskites still suffer from serious problems related to toxicity. Herein, this work reports the synthesis of efficient and high color-purity deep-red carbon dots (CDs) with a record narrow FWHM of 21 nm and a high quantum yield of more than 50% from readily available green plants. Moreover, an exciplex host is further established using a polymer and small molecular blend, which has been shown to be an efficient strategy for producing high color-purity monochrome emission from deep-red CDs via Förster energy transfer (FET). The deep-red CD-LEDs display high color-purity with Commission Internationale de l'Eclairage (CIE) coordinates of (0.692, 0.307). To the best of the knowledge, this is the first report of high color-purity CD-LEDs in the deep-red region, opening the door for the application of CDs in the development of high-resolution light-emitting display technologies.
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Affiliation(s)
- Renjing Chen
- College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou, 350117, China
| | - Zhibin Wang
- College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou, 350117, China
| | - Tao Pang
- Huzhou Key Laboratory of Materials for Energy Conversion and Storage, College of Science, Huzhou University, Zhejiang, Huzhou, 313000, China
| | - Qian Teng
- Key Laboratory of Theoretical and Computational Photochemistry of Ministry of Education, College of Chemistry, Beijing Normal University, Beijing, 100875, China
| | - Chenhao Li
- Key Laboratory of Theoretical and Computational Photochemistry of Ministry of Education, College of Chemistry, Beijing Normal University, Beijing, 100875, China
| | - Naizhong Jiang
- College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou, 350117, China
| | - Song Zheng
- College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou, 350117, China
| | - Ruidan Zhang
- College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou, 350117, China
| | - Yuanhui Zheng
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information, Fuzhou, Fujian, 350116, P. R. China
- College of Chemistry, Fuzhou University, Fuzhou, Fujian, 350116, China
| | - Daqin Chen
- College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou, 350117, China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information, Fuzhou, Fujian, 350116, P. R. China
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fuzhou, 350117, China
- Fujian Provincial Engineering Technology Research Center of Solar Energy Conversion and Energy Storage, Fuzhou, 350117, China
| | - Fanglong Yuan
- Key Laboratory of Theoretical and Computational Photochemistry of Ministry of Education, College of Chemistry, Beijing Normal University, Beijing, 100875, China
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10
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Baruj HD, Bozkaya I, Canimkurbey B, Isik AT, Shabani F, Delikanli S, Shendre S, Erdem O, Isik F, Demir HV. Highly-Directional, Highly-Efficient Solution-Processed Light-Emitting Diodes of All-Face-Down Oriented Colloidal Quantum Well Self-Assembly. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2206582. [PMID: 37021726 DOI: 10.1002/smll.202206582] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2022] [Revised: 03/06/2023] [Indexed: 06/19/2023]
Abstract
Semiconductor colloidal quantum wells (CQWs) provide anisotropic emission behavior originating from their anisotropic optical transition dipole moments (TDMs). Here, solution-processed colloidal quantum well light-emitting diodes (CQW-LEDs) of a single all-face-down oriented self-assembled monolayer (SAM) film of CQWs that collectively enable a supreme level of IP TDMs at 92% in the ensemble emission are shown. This significantly enhances the outcoupling efficiency from 22% (of standard randomly-oriented emitters) to 34% (of face-down oriented emitters) in the LED. As a result, the external quantum efficiency reaches a record high level of 18.1% for the solution-processed type of CQW-LEDs, putting their efficiency performance on par with the hybrid organic-inorganic evaporation-based CQW-LEDs and all other best solution-processed LEDs. This SAM-CQW-LED architecture allows for a high maximum brightness of 19,800 cd m-2 with a long operational lifetime of 247 h at 100 cd m-2 as well as a stable saturated deep-red emission (651 nm) with a low turn-on voltage of 1.7 eV at a current density of 1 mA cm-2 and a high J90 of 99.58 mA cm-2 . These findings indicate the effectiveness of oriented self-assembly of CQWs as an electrically-driven emissive layer in improving outcoupling and external quantum efficiencies in the CQW-LEDs.
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Affiliation(s)
- Hamed Dehghanpour Baruj
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Iklim Bozkaya
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Betul Canimkurbey
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
- Central Research Laboratory, Amasya University, Amasya, 05100, Turkey
| | - Ahmet Tarik Isik
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Farzan Shabani
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Savas Delikanli
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
- LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 639798, Singapore
| | - Sushant Shendre
- LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 639798, Singapore
| | - Onur Erdem
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Furkan Isik
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Hilmi Volkan Demir
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
- LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 639798, Singapore
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11
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Shabani F, Martinez PLH, Shermet N, Korkut H, Sarpkaya I, Dehghanpour Baruj H, Delikanli S, Isik F, Durmusoglu EG, Demir HV. Gradient Type-II CdSe/CdSeTe/CdTe Core/Crown/Crown Heteronanoplatelets with Asymmetric Shape and Disproportional Excitonic Properties. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205729. [PMID: 36650974 DOI: 10.1002/smll.202205729] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/16/2022] [Revised: 12/22/2022] [Indexed: 06/17/2023]
Abstract
Characterized by their strong 1D confinement and long-lifetime red-shifted emission spectra, colloidal nanoplatelets (NPLs) with type-II electronic structure provide an exciting ground to design complex heterostructures with remarkable properties. This work demonstrates the synthesis and optical characterization of CdSe/CdSeTe/CdTe core/crown/crown NPLs having a step-wise gradient electronic structure and disproportional wavefunction distribution, in which the excitonic properties of the electron and hole can be finely tuned through adjusting the geometry of the intermediate crown. The first crown with staggered configuration gives rise to a series of direct and indirect transition channels that activation/deactivation of each channel is possible through wavefunction engineering. Moreover, these NPLs allow for switching between active channels with temperature, where lattice contraction directly affects the electron-hole (e-h) overlap. Dominated by the indirect transition channels over direct transitions, the lifetime of the NPLs starts to increase at 9 K, indicative of low dark-bright exciton splitting energy. The charge transfer states from the two type-II interfaces promote a large number of indirect transitions, which effectively increase the absorption of low-energy photons critical for nonlinear properties. As a result, these NPLs demonstrate exceptionally high two-photon absorption cross-sections with the highest value of 12.9 × 106 GM and superlinear behavior.
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Affiliation(s)
- Farzan Shabani
- UNAM - Institute of Materials Science and Nanotechnology and National Nanotechnology Research Center, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara, 06800, Turkey
| | - Pedro Ludwig Hernandez Martinez
- LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Materials Sciences, School of Materials Science and Nanotechnology, Nanyang Technological University, Singapore, 639798, Singapore
| | - Nina Shermet
- UNAM - Institute of Materials Science and Nanotechnology and National Nanotechnology Research Center, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara, 06800, Turkey
| | - Hilal Korkut
- UNAM - Institute of Materials Science and Nanotechnology and National Nanotechnology Research Center, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara, 06800, Turkey
| | - Ibrahim Sarpkaya
- UNAM - Institute of Materials Science and Nanotechnology and National Nanotechnology Research Center, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara, 06800, Turkey
| | - Hamed Dehghanpour Baruj
- UNAM - Institute of Materials Science and Nanotechnology and National Nanotechnology Research Center, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara, 06800, Turkey
| | - Savas Delikanli
- UNAM - Institute of Materials Science and Nanotechnology and National Nanotechnology Research Center, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara, 06800, Turkey
- LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Materials Sciences, School of Materials Science and Nanotechnology, Nanyang Technological University, Singapore, 639798, Singapore
| | - Furkan Isik
- UNAM - Institute of Materials Science and Nanotechnology and National Nanotechnology Research Center, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara, 06800, Turkey
| | - Emek Goksu Durmusoglu
- LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Materials Sciences, School of Materials Science and Nanotechnology, Nanyang Technological University, Singapore, 639798, Singapore
| | - Hilmi Volkan Demir
- UNAM - Institute of Materials Science and Nanotechnology and National Nanotechnology Research Center, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara, 06800, Turkey
- LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Materials Sciences, School of Materials Science and Nanotechnology, Nanyang Technological University, Singapore, 639798, Singapore
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Diroll BT, Guzelturk B, Po H, Dabard C, Fu N, Makke L, Lhuillier E, Ithurria S. 2D II-VI Semiconductor Nanoplatelets: From Material Synthesis to Optoelectronic Integration. Chem Rev 2023; 123:3543-3624. [PMID: 36724544 DOI: 10.1021/acs.chemrev.2c00436] [Citation(s) in RCA: 48] [Impact Index Per Article: 24.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/03/2023]
Abstract
The field of colloidal synthesis of semiconductors emerged 40 years ago and has reached a certain level of maturity thanks to the use of nanocrystals as phosphors in commercial displays. In particular, II-VI semiconductors based on cadmium, zinc, or mercury chalcogenides can now be synthesized with tailored shapes, composition by alloying, and even as nanocrystal heterostructures. Fifteen years ago, II-VI semiconductor nanoplatelets injected new ideas into this field. Indeed, despite the emergence of other promising semiconductors such as halide perovskites or 2D transition metal dichalcogenides, colloidal II-VI semiconductor nanoplatelets remain among the narrowest room-temperature emitters that can be synthesized over a wide spectral range, and they exhibit good material stability over time. Such nanoplatelets are scientifically and technologically interesting because they exhibit optical features and production advantages at the intersection of those expected from colloidal quantum dots and epitaxial quantum wells. In organic solvents, gram-scale syntheses can produce nanoparticles with the same thicknesses and optical properties without inhomogeneous broadening. In such nanoplatelets, quantum confinement is limited to one dimension, defined at the atomic scale, which allows them to be treated as quantum wells. In this review, we discuss the synthetic developments, spectroscopic properties, and applications of such nanoplatelets. Covering growth mechanisms, we explain how a thorough understanding of nanoplatelet growth has enabled the development of nanoplatelets and heterostructured nanoplatelets with multiple emission colors, spatially localized excitations, narrow emission, and high quantum yields over a wide spectral range. Moreover, nanoplatelets, with their large lateral extension and their thin short axis and low dielectric surroundings, can support one or several electron-hole pairs with large exciton binding energies. Thus, we also discuss how the relaxation processes and lifetime of the carriers and excitons are modified in nanoplatelets compared to both spherical quantum dots and epitaxial quantum wells. Finally, we explore how nanoplatelets, with their strong and narrow emission, can be considered as ideal candidates for pure-color light emitting diodes (LEDs), strong gain media for lasers, or for use in luminescent light concentrators.
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Affiliation(s)
- Benjamin T Diroll
- Center for Nanoscale Materials, Argonne National Laboratory, 9700 S. Cass Avenue, Lemont, Illinois 60439, United States
| | - Burak Guzelturk
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, 9700 S. Cass Avenue, Lemont, Illinois 60439, United States
| | - Hong Po
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Corentin Dabard
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Ningyuan Fu
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Lina Makke
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
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13
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Double-crowned 2D semiconductor nanoplatelets with bicolor power-tunable emission. Nat Commun 2022; 13:5094. [PMID: 36042249 PMCID: PMC9427944 DOI: 10.1038/s41467-022-32713-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/21/2022] [Accepted: 08/10/2022] [Indexed: 11/29/2022] Open
Abstract
Nanocrystals (NCs) are now established building blocks for optoelectronics and their use as down converters for large gamut displays has been their first mass market. NC integration relies on a combination of green and red NCs into a blend, which rises post-growth formulation issues. A careful engineering of the NCs may enable dual emissions from a single NC population which violates Kasha’s rule, which stipulates that emission should occur at the band edge. Thus, in addition to an attentive control of band alignment to obtain green and red signals, non-radiative decay paths also have to be carefully slowed down to enable emission away from the ground state. Here, we demonstrate that core/crown/crown 2D nanoplatelets (NPLs), made of CdSe/CdTe/CdSe, can combine a large volume and a type-II band alignment enabling simultaneously red and narrow green emissions. Moreover, we demonstrate that the ratio of the two emissions can be tuned by the incident power, which results in a saturation of the red emission due to non-radiative Auger recombination that affects this emission much stronger than the green one. Finally, we also show that dual-color, power tunable, emission can be obtained through an electrical excitation. Nanocrystals are desirable light sources for advanced display technologies. Here, the authors report on double-crowned 2D semiconductor nanoplatelets as light downconverters that offer both green and red emissions to achieve a wide color gamut.
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14
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Hu S, Shabani F, Liu B, Zhang L, Guo M, Lu G, Zhou Z, Wang J, Huang JC, Min Y, Xue Q, Demir HV, Liu C. High-Performance Deep Red Colloidal Quantum Well Light-Emitting Diodes Enabled by the Understanding of Charge Dynamics. ACS NANO 2022; 16:10840-10851. [PMID: 35816171 DOI: 10.1021/acsnano.2c02967] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Colloidal quantum wells (CQWs) have emerged as a promising family of two-dimensional (2D) optoelectronic materials with outstanding properties, including ultranarrow luminescence emission, nearly unity quantum yield, and large extinction coefficient. However, the performance of CQWs-based light-emitting diodes (CQW-LEDs) is far from satisfactory, particularly for deep red emissions (≥660 nm). Herein, high efficiency, ultra-low-efficiency roll-off, high luminance, and extremely saturated deep red CQW-LEDs are reported. A key feature for the high performance is the understanding of charge dynamics achieved by introducing an efficient electron transport layer, ZnMgO, which enables balanced charge injection, reduced nonradiative channels, and smooth films. The CQW-LEDs based on (CdSe/CdS)@(CdS/CdZnS) ((core/crown)@(colloidal atomic layer deposition shell/hot injection shell)) show an external quantum efficiency of 9.89%, which is a record value for 2D nanocrystal LEDs with deep red emissions. The device also exhibits an ultra-low-efficiency roll-off and a high luminance of 3853 cd m-2. Additionally, an exceptional color purity with the CIE coordinates of (0.719, 0.278) is obtained, indicating that the color gamut covers 102% of the International Telecommunication Union Recommendation BT 2020 (Rec. 2020) standard in the CIE 1931 color space, which is the best for CQW-LEDs. Furthermore, an active-matrix CQW-LED pixel circuit is demonstrated. The findings imply that the understanding of charge dynamics not only enables high-performance CQW-LEDs and can be further applied to other kinds of nanocrystal LEDs but also is beneficial to the development of CQW-LEDs-based display technology and related integrated optoelectronics.
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Affiliation(s)
- Sujuan Hu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Farzan Shabani
- UNAM-Institute of Materials Science and Nanotechnology, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara 06800, Turkey
| | - Baiquan Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Lingjiao Zhang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Min Guo
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Guanhua Lu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Zhisheng Zhou
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, School of Materials Science and Engineering, South China University of Technology, 381 Wushan Road, Guangzhou 510640, China
| | - Jing Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Jacob C Huang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, China
- Hong Kong Institute for Advanced Study, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Yonggang Min
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
| | - Qifan Xue
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, School of Materials Science and Engineering, South China University of Technology, 381 Wushan Road, Guangzhou 510640, China
| | - Hilmi Volkan Demir
- UNAM-Institute of Materials Science and Nanotechnology, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara 06800, Turkey
- LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Materials Sciences, School of Materials Science and Nanotechnology, Nanyang Technological University, Singapore 639798
| | - Chuan Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
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