Atomistic Observation of the Local Phase Transition in MoTe2 for Application in Homojunction Photodetectors

Laser-assisted synthesis and modification of 2D materials

Two-dimensional (2D) materials with unique physical, electronic, and optical properties have been intensively studied to be utilized for the next-generation electronic and optical devices, and the use of laser energy in the synthesis and modification of 2D materials is advantageous due to its convenient and fast fabrication processes as well as selective, controllable, and cost-effective characteristics allowing the precise control in materials properties. This paper summarizes the recent progress in utilizations of laser technology in synthesizing, doping, etching, transfer and strain engineering of 2D materials, which is expected to provide an insight for the future applications across diverse research areas.

Adsorption Properties of Metal Atom (Co, V, W, Zr)-Modified MoTe2 for CO, CH3CHO, and C6H6 Gases: A DFT Study

This study investigates the adsorption characteristics of the pristine MoTe2 monolayer and the metal atom (Co, V, W, Zr)-modified MoTe2 monolayer on the hazardous gases CO, CH3CHO, and C6H6 based on the density functional theory. The adsorption mechanism was studied from the perspectives of molecular density differences, band structures, molecular orbitals, and the density of states. Research analysis showed that the changes in conductivity caused by the adsorption of different gases on the substrate were significantly different, which can be used to prepare gas sensing materials with selective sensitivity for CO, CH3CHO, and C6H6. This study lays a reliable theoretical foundation for the gas sensing analysis of toxic and hazardous gases using metal atom-modified MoTe2 materials.

Gamma-induced stress, strain and p-type doping in MBE-grown thin film MoTe2

A thorough examination of the stability of a 2D MoTe2 thin film exposed to high-dose gamma radiation (γ) is addressed in this study. This study compares the film before and after irradiation (10-600 kGy dosage) to report the impact of γ radiation on the surface morphology, work function, tensile strain and charge redistribution in the MoTe2 thin film. The radiation damage to the film is monitored by optical micrographs (OM) and with atomic force microscopy (AFM) and conceptualized by thermal strain in the film. Raman spectroscopy has been used to analyze the shifting and to address the strain that arises due to irradiation in its vibrational mode. Kelvin probe force microscopy (KPFM) has been performed to evaluate the work function of the film, which increases by 0.14 eV for the 600 kGy γ-irradiated sample, implying shifting of the Fermi-level to the valence band of the spectrum and thus it results in p-type doping in the film. Owing to the reduced atomic mass and high energy of tellurium atoms, γ-irradiation causes tellurium vacancies, which lead to the formation of dangling bonds at unoccupied sites. When oxygen is adsorbed at these reactive spots, a charge-transfer mechanism takes place. This mechanism involves the transfer of electrons from the thin MoTe2 film to the adsorbed oxygen, forming oxides and causing p-type doping. Furthermore, p-doping is verified by the valence band shifting by 1.27 eV in 600 kGy in γ-irradiated samples in X-ray photoelectron spectroscopy. This comprehensive study shows how γ irradiation affects the chemical and physical characteristics of the MoTe2 thin film. Consequently, it shows that if devices integrating MoTe2 thin films are meant to be used in high-dose radiation conditions, the adsorbate concentrations, radiation shielding and required lifetimes must be carefully evaluated.

Heterocontact-Triggered 1H to 1T' Phase Transition in CVD-Grown Monolayer MoTe2: Implications for Low Contact Resistance Electronic Devices

Single-layer molybdenum ditelluride (MoTe2) has attracted attention due to the smaller energy difference between the semiconducting (1H) and semimetallic (1T') phases with respect to other two-dimensional transition metal dichalcogenides (TMDs). Understanding the phenomenon of polymorphism between these structural phases is of great fundamental and practical importance. In this paper, we report a 1H to 1T' phase transition occurring during the chemical vapor deposition (CVD) synthesis of single-layer MoTe2 at 730 °C. The transformation originates at the heterocontact between monoclinic and hexagonal crystals and progresses to either yield a partial or complete 1H to 1T' phase transition. Microscopic and spectroscopic analyses of the MoTe2 crystals reveal the presence of Te vacancies and mirror twin boundaries (MTB) domains in the hexagonal phase. The experimental observations and theoretical simulations indicate that the combination of heterocontact formation and Te vacancies are relevant triggering mechanisms in the observed transformation. By advancing in the understanding and controlling of the direct synthesis of lateral 1T'/1H heterostructures, this work contributes to the development of MoTe2-based electronic and optoelectronic devices with low contact resistance.

Melting-free integrated photonic memory with layered polymorphs

Chalcogenide-based nonvolatile phase change materials (PCMs) have a long history of usage, from bulk disk memory to all-optic neuromorphic computing circuits. Being able to perform uniform phase transitions over a subwavelength scale makes PCMs particularly suitable for photonic applications. For switching between nonvolatile states, the conventional chalcogenide phase change materials are brought to a melting temperature to break the covalent bonds. The cooling rate determines the final state. Reversible polymorphic layered materials provide an alternative atomic transition mechanism for low-energy electronic (small domain size) and photonic nonvolatile memories (which require a large effective tuning area). The small energy barrier of breaking van der Waals force facilitates low energy, fast-reset, and melting-free phase transitions, which reduces the chance of element segregation-associated device failure. The search for such material families starts with polymorphic In2Se3, which has two layered structures that are topologically similar and stable at room temperature. In this perspective, we first review the history of different memory schemes, compare the thermal dynamics of phase transitions in amorphous-crystalline and In2Se3, detail the device implementations for all-optical memory, and discuss the challenges and opportunities associated with polymorphic memory.

Recent Strategies for the Synthesis of Phase-Pure Ultrathin 1T/1T' Transition Metal Dichalcogenide Nanosheets

The past few decades have witnessed a notable increase in transition metal dichalcogenide (TMD) related research not only because of the large family of TMD candidates but also because of the various polytypes that arise from the monolayer configuration and layer stacking order. The peculiar physicochemical properties of TMD nanosheets enable an enormous range of applications from fundamental science to industrial technologies based on the preparation of high-quality TMDs. For polymorphic TMDs, the 1T/1T' phase is particularly intriguing because of the enriched density of states, and thus facilitates fruitful chemistry. Herein, we comprehensively discuss the most recent strategies for direct synthesis of phase-pure 1T/1T' TMD nanosheets such as mechanical exfoliation, chemical vapor deposition, wet chemical synthesis, atomic layer deposition, and more. We also review frequently adopted methods for phase engineering in TMD nanosheets ranging from chemical doping and alloying, to charge injection, and irradiation with optical or charged particle beams. Prior to the synthesis methods, we discuss the configuration of TMDs as well as the characterization tools mostly used in experiments. Finally, we discuss the current challenges and opportunities as well as emphasize the promising fields for the future development.

Directionally-Resolved Phononic Properties of Monolayer 2D Molybdenum Ditelluride (MoTe2) under Uniaxial Elastic Strain

Understanding the phonon characteristics of two-dimensional (2D) molybdenum ditelluride (MoTe2) under strain is critical to manipulating its multiphysical properties. Although there have been numerous computational efforts to elucidate the strain-coupled phonon properties of monolayer MoTe2, empirical validation is still lacking. In this work, monolayer 1H-MoTe2 under uniaxial strain is studied via in situ micro-Raman spectroscopy. Directionally dependent monotonic softening of the doubly degenerate in-plane E2g1 phonon mode is observed with increasing uniaxial strain, where the E2g1 peak red-shifts -1.66 ± 0.04 cm-1/% along the armchair direction and -0.80 ± 0.07 cm-1/% along the zigzag direction. The corresponding Grüneisen parameters are calculated to be 1.09 and 0.52 along the armchair and zigzag directions, respectively. This work provides the first empirical quantification and validation of the orientation-dependent strain-coupled phonon response in monolayer 1H-MoTe2 and serves as a benchmark for other prototypical 2D transition-metal tellurides.

Reversible Thermally Driven Phase Change of Layered In2Se3 for Integrated Photonics

Two-dimensional In₂Se₃, an unconventional phase-change material, has drawn considerable attention for polymorphic phase transitions and electronic device applications. However, its reversible thermally driven phase transitions and potential use in photonic devices have yet to be explored. In this study, we observe the thermally driven reversible phase transitions between α and β' phases with the assistance of local strain from surface wrinkles and ripples, as well as reversible phase changes within the β phase family. These transitions lead to changes in the refractive index and other optoelectronic properties with minimal optical loss at telecommunication bands, which are crucial in integrated photonic applications such as postfabrication phase trimming. Additionally, multilayer β'-In₂Se₃ working as a transparent microheater proves to be a viable option for efficient thermo-optic modulation. This prototype design for layered In₂Se₃ offers immense potential for integrated photonics and paves the way for multilevel, nonvolatile optical memory applications.

Emerging 2D Metal Oxides: From Synthesis to Device Integration

2D metal oxides have aroused increasing attention in the field of electronics and optoelectronics due to their intriguing physical properties. In this review, an overview of recent advances on synthesis of 2D metal oxides and their electronic applications is presented. First, the tunable physical properties of 2D metal oxides that relate to the structure (various oxidation-state forms, polymorphism, etc.), crystallinity and defects (anisotropy, point defects, and grain boundary), and thickness (quantum confinement effect, interfacial effect, etc.) are discussed. Then, advanced synthesis methods for 2D metal oxides besides mechanical exfoliation are introduced and classified into solution process, vapor-phase deposition, and native oxidation on a metal source. Later, the various roles of 2D metal oxides in widespread applications, i.e., transistors, inverters, photodetectors, piezotronics, memristors, and potential applications (solar cell, spintronics, and superconducting devices) are discussed. Finally, an outlook of existing challenges and future opportunities in 2D metal oxides is proposed.

Superior Performances of Self-Driven Near-Infrared Photodetectors Based on the SnTe:Si/Si Heterostructure Boosted by Bulk Photovoltaic Effect

The upsurge of new materials that can be used for near-infrared (NIR) photodetectors operated without cooling is crucial. As a novel material with a small bandgap of ≈0.28 eV, the topological crystalline insulator SnTe has attracted considerable attention. Herein, this work demonstrates self-driven NIR photodetectors based on SnTe/Si and SnTe:Si/Si heterostructures. The SnTe/Si heterostructure has a high detectivity D* of 3.3 × 10¹² Jones. By Si doping, the SnTe:Si/Si heterostructure reduces the dark current density and increases the photocurrent by ≈1 order of magnitude simultaneously, which improves the detectivity D* by ≈2 orders of magnitude up to 1.59 × 10¹⁴ Jones. Further theoretical analysis indicates that the improved device performance may be ascribed to the bulk photovoltaic effect (BPVE), in which doped Si atoms break the inversion symmetry and thus enable the generation of additional photocurrents beyond the heterostructure. In addition, the external quantum efficiency (EQE) measured at room temperature at 850 nm increases by a factor of 7.5 times, from 38.5% to 289%. A high responsivity of 1979 mA W^-1 without bias and fast rising time of 8 µs are also observed. The significantly improved photodetection achieved by the Si doping is of great interest and may provide a novel strategy for superior photodetectors.

In Situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe2

Understanding the phase transition mechanisms in two-dimensional (2D) materials is a key to precisely tailor their properties at the nanoscale. Molybdenum ditelluride (MoTe₂) exhibits multiple phases at room temperature, making it a promising candidate for phase-change applications. Here, we fabricate lateral 2H-T_d interfaces with laser irradiation and probe their phase transitions from micro- to atomic scales with in situ heating in the transmission electron microscope (TEM). By encapsulating the MoTe₂ with graphene protection layers, we create an in situ reaction cell compatible with atomic resolution imaging. We find that the T_d-to-2H phase transition initiates at phase boundaries at low temperatures (200-225 °C) and propagates anisotropically along the b-axis in a layer-by-layer fashion. We also demonstrate a fully reversible 2H-T_d-2H phase transition cycle, which generates a coherent 2H lattice containing inversion domain boundaries. Our results provide insights on fabricating 2D heterophase devices with atomically sharp and coherent interfaces.

Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications

Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.

Dielectric Contrast Tailoring for Polarized Photosensitivity toward Multiplexing Optical Communications and Dynamic Encrypt Technology

A selective-area oxidation strategy is developed to polarize high-symmetry 2D layered materials (2DLMs). The dichroic ratio of the derived O-WS₂/WS₂ photodetector reaches ∼8, which is competitive among state-of-the-art polarization photodetectors. Finite-different time-domain simulations consolidate that the polarization-sensitive photoresponse is associated with anisotropic spacial confinement, which gives rise to distinct dielectric contrasts for linearly polarized light of various directions and thus the polarization-dependent near-field distribution. Furthermore, selective-area oxidation treatment brings about dual effects, comprising the in situ formation of seamless in-plane WS₂ homojunctions by thickness tailoring and the formation of out-of-plane O-WS₂/WS₂ heterojunctions. As a consequence, the recombination of photocarriers is markedly suppressed, resulting in outstanding photosensitivity with the optimized responsivity, external quantum efficiency, and detectivity of 0.161 A/W, 49.4%, and 1.4 × 10¹¹ Jones for an O-WS₂/WS₂ photodetector in a self-powered mode. A scheme of multiplexing optical communications is revealed by harnessing the intensity and polarization state of light as independent transmission channels. Furthermore, dynamic encryption by leveraging the polarization state as a secret key is proposed. In the end, broad universality is reinforced through the induction of linear dichroism within 2D WSe₂ crystals. On the whole, this study provides an additional perspective on polarization optoelectronics based on 2DLMs.