Contributions of Light to Novel Logic Concepts Using Optoelectronic Materials

Multifunctional Logic Gates via Coexistent Positive and Negative Photoconductivity of a Single Bi2Se3 Photodetector

Because existing electronic logic gates have some limitations in the era of information explosion, the demand for substantial amounts of data processing has aroused interest in new types of logic gates. The use of optoelectronic materials to prepare logic gates is popular; however, they often have complex structures, high power consumption, and low reliability. Herein, a new optoelectronic logic gate (OELG) is presented based on the coexistence of positive and negative photoconductivities in the 2D material Bi2Se3 at different wavelengths. Five logic gate signals (OR, AND, NOT, NOR, and NAND) can be modulated by inputting different wavelengths of light (405 and 808 nm) through a single Bi2Se3 photodetector, offering a new method for simple-structured OELGs. For practical applications, five logic gate output signals are modulated with 100% accuracy on an 8 × 8 pixel array, and simple imaging and logical processing of the images are demonstrated.

3D Z-scheme conjugated polymer/Cu2O for organic photoelectrochemical transistor bioassay

Organic photoelectrochemical transistor (OPECT) is an emerging technology studying photo-electric-biological recognition events. Here, this work reports the three-dimensional (3D) Z-scheme poly (1,4-diethynylbenzene) (pDEB)@Cu2O heterojunction as a high-efficacy photogating module and its application for OPECT bioassay. Specifically, 3D Z-scheme pDEB@Cu2O heterojunction enabled fast charge transport and ion diffusion in the system, achieving remarkable amplification capability with a current gain as high as ca. 9.6 × 103. By linking with GOx-labeled sandwich immunorecognition, the impact of GOx-generated H2O2 on the OPECT made possible the sensitive bioassay. Exemplified by carcinoembryonic antigen (CEA) as the model target, the OPECT device achieved a linear detection range spanning from 100 fg/mL to 100 ng/mL and coupled with a detection limit as low as 72 fg/mL. This work provided a generic and extensible platform for the designation of novel bioassay systems.

Reconfigurable Vertical Phototransistor with MoTe2 Homojunction for High-Speed Rectifier and Multivalued Logical Circuits

The most reported two-dimensional (2D) reconfigurable multivalued logic (RMVL) devices primarily involve a planar configuration and carrier transport, which limits the high-density circuit integration and high-speed logic operation. In this work, the vertical transistors with reconfigurable MoTe2 homojunction are developed for low-power, high-speed, multivalued logic circuits. Through top/bottom dual-gate modulation, the transistors can be configured into four modes: P-i-N, N-i-P, P-i-P, and N-i-N. The reconfigurable rectifying and photovoltaic behaviors are observed in P-i-N and N-i-P configurations, exhibiting ideal diode characteristics with a current rectification ratio over 105 and sign-reversible photovoltaic response with a photoswitching ratio up to 7.44 × 105. Taking advantage of the seamless homogeneous integration and short vertical channel architecture, the transistor can operate as an electrical switch with an ultrafast speed of 680 ns, surpassing the conventional p-n diode. The MoTe2 half-wave rectifier is then applied in high-frequency integrated circuits using both square wave and sinusoidal waveforms. By applying an electrical pulse with a 1/4 phase difference between two input signals, the RMVL circuit has been achieved. This work proposes a universal and reconfigurable vertical transistor, enabled by dual-gate electrostatic doping on top/bottom sides of MoTe2 homojunction, suggesting a high integration device scheme for high-speed RMVL circuits and systems.

Printed On-Chip Perovskite Heterostructure Arrays for Optical Switchable Logic Gates

The use of optoelectronic devices for high-speed and low-power data transmission and computing is considered in the next-generation logic circuits. Heterostructures, which can generate and transmit photoresponse signals dealing with different input lights, are highly desirable for optoelectronic logic gates. Here, the printed on-chip perovskite heterostructures are demonstrated to achieve optical-controlled "AND" and "OR" optoelectronic logic gates. Perovskite heterostructures are printed with a high degree of control over composition, site, and crystallization. Different regions of the printed perovskite heterostructures exhibit distinguishable photoresponse to varied wavelengths of input lights, which can be utilized to achieve optical-controlled logic functions. Correspondingly, parallel operations of the two logic gates ("AND" and "OR") by way of choosing the output electrodes under the single perovskite heterostructure. Benefiting from the uniform crystallization and strict alignment of the printed perovskite heterostructures, the integrated 3 × 3 pixels all exhibit 100% logic operation accuracy. Finally, optical-controlled logic gates responding to multiwavelength light can be printed on the predesigned microelectrodes as the on-chip integrated circuits. This printing strategy allows for integrating heterostructure-based optical and electronic devices from a unit-scale device to a system-scale device.

Gate Voltage- and Bias Voltage-Tunable Staggered-Gap to Broken-Gap Transition Based on WSe2/Ta2NiSe5 Heterostructure for Multimode Optoelectronic Logic Gate

Two-dimensional (2D) materials with superior properties exhibit tremendous potential in developing next-generation electronic and optoelectronic devices. Integrating various functions into one device is highly expected as that endows 2D materials great promise for more Moore and more-than-Moore device applications. Here, we construct a WSe2/Ta2NiSe5 heterostructure by stacking the p-type WSe2 and the n-type narrow gap Ta2NiSe5 with the aim to achieve a multifunction optoelectronic device. Owing to the large interface potential barrier, the heterostructure device reveals a prominent diode feature with a large rectify ratio (7.6 × 104) and a low dark current (10-12 A). Especially, gate voltage- and bias voltage-tunable staggered-gap to broken-gap transition is achieved on the heterostructure device, which enables gate voltage-tunable forward and reverse rectifying features. As results, the heterostructure device exhibits superior self-powered photodetection properties, including a high detectivity of 1.08 × 1010 Jones and a fast response time of 91 μs. Additionally, the intrinsic structural anisotropy of Ta2NiSe5 endows the heterostructure device with strong polarization-sensitive photodetection and high-resolution polarization imaging. Based on these characteristics, a multimode optoelectronic logic gate is realized on the heterostructure via synergistically modulating the light on/off, polarization angle, gate voltage, and bias voltage. This work shed light on the future development of constructing high-performance multifunctional optoelectronic devices.

J-MISFET Hybrid Dual-Gate Switching Device for Multifunctional Optoelectronic Logic Gate Applications

High-performance and low operating voltage are becoming increasingly significant device parameters to meet the needs of future integrated circuit (IC) processors and ensure their energy-efficient use in upcoming mobile devices. In this study, we suggest a hybrid dual-gate switching device consisting of the vertically stacked junction and metal-insulator-semiconductor (MIS) gate structure, named J-MISFET. It shows excellent device performances of low operating voltage (<0.5 V), drain current ON/OFF ratio (∼4.7 × 105), negligible hysteresis window (<0.5 mV), and near-ideal subthreshold slope (SS) (60 mV/dec), making it suitable for low-power switching operation. Furthermore, we investigated the switchable NAND/NOR logic gate operations and the photoresponse characteristics of the J-MISFET under the small supply voltage (0.5 V). To advance the applications further, we successfully demonstrated an integrated optoelectronic security logic system comprising 2-electric inputs (for encrypted data) and 1-photonic input signal (for password key) as a hardware security device for data protection. Thus, we believe that our J-MISFET, with its heterogeneous hybrid gate structures, will illuminate the path toward future device configurations for next-generation low-power electronics and multifunctional security logic systems in a data-driven society.