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Choi SH, Ryu SH, Kim DG, Kwag JH, Yeon C, Jung J, Park YS, Park JS. c-Axis Aligned 3 nm Thick In 2O 3 Crystal Using New Liquid DBADMIn Precursor for Highly Scaled FET Beyond the Mobility-Stability Trade-off. NANO LETTERS 2024; 24:1324-1331. [PMID: 38230977 DOI: 10.1021/acs.nanolett.3c04312] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
Oxide semiconductors (OS) are attractive materials for memory and logic device applications owing to their low off-current, high field effect mobility, and superior large-area uniformity. Recently, successful research has reported the high field-effect mobility (μFE) of crystalline OS channel transistors (above 50 cm2 V-1 s-1). However, the memory and logic device application presents challenges in mobility and stability trade-offs. Here, we propose a method for achieving high-mobility and high-stability by lowering the grain boundary effect. A DBADMIn precursor was synthesized to deposit highly c-axis-aligned C(222) crystalline 3 nm thick In2O3 films. In this study, the 250 °C deposited 3 nm thick In2O3 channel transistor exhibited high μFE of 41.12 cm2 V-1 s-1, Vth of -0.50 V, and SS of 150 mV decade-1 with superior stability of 0.16 V positive shift during PBTS at 100 °C, 3 MV cm-1 stress conditions for 3 h.
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Affiliation(s)
- Su-Hwan Choi
- Division of Nanoscale Semiconductor Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Seong-Hwan Ryu
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Dong-Gyu Kim
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Jae-Hyeok Kwag
- Division of Nanoscale Semiconductor Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Changbong Yeon
- Thin Film Materials Development Team, Soulbrain, 14-102 Gongdan-Gil, Gongju Republic of Korea
| | - Jaesun Jung
- Thin Film Materials Development Team, Soulbrain, 14-102 Gongdan-Gil, Gongju Republic of Korea
| | - Young-Soo Park
- Thin Film Materials Development Team, Soulbrain, 14-102 Gongdan-Gil, Gongju Republic of Korea
| | - Jin-Seong Park
- Division of Nanoscale Semiconductor Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
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