Synthesis and X-ray Crystal Structures of β-Ketoiminate Complexes

Tris(β-ketoiminate) Aluminium(III) Compounds as Aluminium Oxide Precursors

Precursor design is the crucial step in tailoring the deposition profile towards a multitude of functional materials. Most commercially available aluminium oxide precursors require high processing temperatures (>500 °C). Herein, we report the tuning of the decomposition profile (200-350 °C) of a range of octahedrally coordinated tris(β-ketoiminate) aluminium complexes of the type [Al(MeCN(R)CHC=OMe)₃ ], by varying the R substituents in the ligands. The complexes are derived from the reaction of trimethylamine alane (TMAA) and a series of N-substituted β-ketoiminate ligands (R-acnacH, R=Me, Et, ⁱ Pr, Ph) with varying R-substituents sizes. When the more sterically encumbered ligand (R=Mes) was used, the Al atom became five-coordinate, therefore representing the threshold to octahedral coordination around the metal in these type of compounds, which, consequently, lead to a change of decomposition profile. The resulting compounds have been characterised by NMR spectroscopy, mass spectrometry, elemental analysis and single crystal X-ray diffraction. [Al(MeCN(Me)CHC=OMe)₃ ] has been used as a single source precursor for the deposition of Al₂ O₃ . Thin films were deposited via aerosol assisted chemical vapour deposition (AACVD), with toluene as the solvent, and were analysed using SEM, EDX and XPS.

Investigations into the structure, reactivity, and AACVD of aluminium and gallium amidoenoate complexes

Amidoenoate (AME = {ethyl-3-(R-amido)but-2-enoate}) complexes of aluminium and gallium, of the type: [AlCl₂(AME^R)] R = iPr (1-Al); [AlCl(AME^R)₂] R = iPr (2-Al), Dip (3-Al); [GaCl₂(AME^R)] R = iPr (1-Ga) and [GaCl(AME^R)₂] R = iPr (2-Ga), Dip (3-Ga), have been synthesised (iPr = isopropyl, Dip = 2,6-diisopropylphenyl). The coordination chemistry of these complexes has been studied in relation to precursor suitability. Investigations into the reactivity of the aluminium and gallium amidoenoate complexes involved reactions with hydride sources including alkali metal hydride salts, alkylsilanes, and magnesium hydride species and magnesium(I) dimers. The isolation of alkyl metal amidoenoate precursors including an aluminium hydride amidoenoate, [AlH(AME^Dip)₂] (4-Al) and dimethyl gallium amidoenoates [GaMe₂(AME^Dip)] (4-Ga), [GaMe₂(AME^iPr)] (5-Ga) concluded the synthetic studies. A selection of the isolated complexes were used as precursors for aerosol assisted chemical vapour deposition (AACVD) at 500 °C. Thin films of either amorphous Al₂O₃ or Ga₂O₃ were deposited and subsequently annealed at 1000 °C to improve the materials' crystallinity. The films were characterised by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), UV-visible (UV-vis) spectroscopy and energy dispersive X-ray analysis (EDXA).