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Düring PM, Rosenberger P, Baumgarten L, Alarab F, Lechermann F, Strocov VN, Müller M. Tunable 2D Electron- and 2D Hole States Observed at Fe/SrTiO 3 Interfaces. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309217. [PMID: 38245856 DOI: 10.1002/adma.202309217] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2023] [Revised: 10/27/2023] [Indexed: 01/22/2024]
Abstract
Oxide electronics provide the key concepts and materials for enhancing silicon-based semiconductor technologies with novel functionalities. However, a basic but key property of semiconductor devices still needs to be unveiled in its oxidic counterparts: the ability to set or even switch between two types of carriers-either negatively (n) charged electrons or positively (p) charged holes. Here, direct evidence for individually emerging n- or p-type 2D band dispersions in STO-based heterostructures is provided using resonant photoelectron spectroscopy. The key to tuning the carrier character is the oxidation state of an adjacent Fe-based interface layer: For Fe and FeO, hole bands emerge in the empty bandgap region of STO due to hybridization of Ti- and Fe- derived states across the interface, while for Fe3O4 overlayers, an 2D electron system is formed. Unexpected oxygen vacancy characteristics arise for the hole-type interfaces, which as of yet had been exclusively assigned to the emergence of 2DESs. In general, this finding opens up the possibility to straightforwardly switch the type of conductivity at STO interfaces by the oxidation state of a redox overlayer. This will extend the spectrum of phenomena in oxide electronics, including the realization of combined n/p-type all-oxide transistors or logic gates.
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Affiliation(s)
- Pia M Düring
- Fachbereich Physik, Universität Konstanz, 78457, Konstanz, Germany
| | - Paul Rosenberger
- Fachbereich Physik, Universität Konstanz, 78457, Konstanz, Germany
- Fakultät Physik, Technische Universität Dortmund, 44221, Dortmund, Germany
| | - Lutz Baumgarten
- Forschungszentrum Jülich GmbH, Peter Grünberg Institut (PGI-6), 52425, Jülich, Germany
| | - Fatima Alarab
- Paul Scherrer Institute, Swiss Light Source, Villingen PSI, CH-5232, Switzerland
| | - Frank Lechermann
- Institut für Theoretische Physik III, Ruhr-Universität Bochum, 44780, Bochum, Germany
| | - Vladimir N Strocov
- Paul Scherrer Institute, Swiss Light Source, Villingen PSI, CH-5232, Switzerland
| | - Martina Müller
- Fachbereich Physik, Universität Konstanz, 78457, Konstanz, Germany
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Cai M, Miao MP, Liang Y, Jiang Z, Liu ZY, Zhang WH, Liao X, Zhu LF, West D, Zhang S, Fu YS. Manipulating single excess electrons in monolayer transition metal dihalide. Nat Commun 2023; 14:3691. [PMID: 37344472 DOI: 10.1038/s41467-023-39360-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/28/2023] [Accepted: 06/09/2023] [Indexed: 06/23/2023] Open
Abstract
Polarons are entities of excess electrons dressed with local response of lattices, whose atomic-scale characterization is essential for understanding the many body physics arising from the electron-lattice entanglement, yet difficult to achieve. Here, using scanning tunneling microscopy and spectroscopy (STM/STS), we show the visualization and manipulation of single polarons in monolayer CoCl2, that are grown on HOPG substrate via molecular beam epitaxy. Two types of polarons are identified, both inducing upward local band bending, but exhibiting distinct appearances, lattice occupations and polaronic states. First principles calculations unveil origin of polarons that are stabilized by cooperative electron-electron and electron-phonon interactions. Both types of polarons can be created, moved, erased, and moreover interconverted individually by the STM tip, as driven by tip electric field and inelastic electron tunneling effect. This finding identifies the rich category of polarons in CoCl2 and their feasibility of precise control unprecedently, which can be generalized to other transition metal halides.
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Affiliation(s)
- Min Cai
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074, Wuhan, China
| | - Mao-Peng Miao
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074, Wuhan, China
| | - Yunfan Liang
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Zeyu Jiang
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Zhen-Yu Liu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074, Wuhan, China
| | - Wen-Hao Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074, Wuhan, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, China
| | - Xin Liao
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074, Wuhan, China
| | - Lan-Fang Zhu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074, Wuhan, China
| | - Damien West
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Shengbai Zhang
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Ying-Shuang Fu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074, Wuhan, China.
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, China.
- Wuhan Institute of Quantum Technology, 430206, Wuhan, China.
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3
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Li H, Gan Y, Husanu MA, Dahm RT, Christensen DV, Radovic M, Sun J, Shi M, Shen B, Pryds N, Chen Y. Robust Electronic Structure of Manganite-Buffered Oxide Interfaces with Extreme Mobility Enhancement. ACS NANO 2022; 16:6437-6443. [PMID: 35312282 DOI: 10.1021/acsnano.2c00609] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The electronic structure as well as the mechanism underlying the high-mobility two-dimensional electron gases (2DEGs) at complex oxide interfaces remain elusive. Herein, using soft X-ray angle-resolved photoemission spectroscopy (ARPES), we present the band dispersion of metallic states at buffered LaAlO3/SrTiO3 (LAO/STO) heterointerfaces where a single-unit-cell LaMnO3 (LMO) spacer not only enhances the electron mobility but also renders the electronic structure robust toward X-ray radiation. By tracing the evolution of band dispersion, orbital occupation, and electron-phonon interaction of the interfacial 2DEG, we find unambiguous evidence that the insertion of the LMO buffer strongly suppresses both the formation of oxygen vacancies as well as the electron-phonon interaction on the STO side. The latter effect makes the buffered sample different from any other STO-based interfaces and may explain the maximum mobility enhancement achieved at buffered oxide interfaces.
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Affiliation(s)
- Hang Li
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- Swiss Light Source, Paul Scherrer Institute, 5232 Villigen, PSI, Switzerland
| | - Yulin Gan
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China
| | - Marius-Adrian Husanu
- National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania
| | - Rasmus Tindal Dahm
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | | | - Milan Radovic
- Swiss Light Source, Paul Scherrer Institute, 5232 Villigen, PSI, Switzerland
| | - Jirong Sun
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China
| | - Ming Shi
- Swiss Light Source, Paul Scherrer Institute, 5232 Villigen, PSI, Switzerland
| | - Baogen Shen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China
| | - Nini Pryds
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Yunzhong Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China
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Chikina A, Christensen DV, Borisov V, Husanu MA, Chen Y, Wang X, Schmitt T, Radovic M, Nagaosa N, Mishchenko AS, Valentí R, Pryds N, Strocov VN. Band-Order Anomaly at the γ-Al 2O 3/SrTiO 3 Interface Drives the Electron-Mobility Boost. ACS NANO 2021; 15:4347-4356. [PMID: 33661601 DOI: 10.1021/acsnano.0c07609] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The rich functionalities of transition-metal oxides and their interfaces bear an enormous technological potential. Its realization in practical devices requires, however, a significant improvement of yet relatively low electron mobility in oxide materials. Recently, a mobility boost of about 2 orders of magnitude has been demonstrated at the spinel-perovskite γ-Al2O3/SrTiO3 interface compared to the paradigm perovskite-perovskite LaAlO3/SrTiO3 interface. We explore the fundamental physics behind this phenomenon from direct measurements of the momentum-resolved electronic structure of this interface using resonant soft-X-ray angle-resolved photoemission. We find an anomaly in orbital ordering of the mobile electrons in γ-Al2O3/SrTiO3 which depopulates electron states in the top SrTiO3 layer. This rearrangement of the mobile electron system pushes the electron density away from the interface, which reduces its overlap with the interfacial defects and weakens the electron-phonon interaction, both effects contributing to the mobility boost. A crystal-field analysis shows that the band order alters owing to the symmetry breaking between the spinel γ-Al2O3 and perovskite SrTiO3. Band-order engineering, exploiting the fundamental symmetry properties, emerges as another route to boost the performance of oxide devices.
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Affiliation(s)
- Alla Chikina
- Swiss Light Source, Paul Scherrer Institute, 5232 Villigen-PSI, Switzerland
- Institute of Physics and Astronomy, Aarhus University, Ny Munkegade 120, 8000 Aarhus, Denmark
| | - Dennis V Christensen
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Vladislav Borisov
- Institut für Theoretische Physik, Goethe-Universität Frankfurt am Main, Max-von-Laue-Strasse 1, 60438 Frankfurt am Main, Germany
- Department of Physics and Astronomy, Uppsala University, Box 516, 5120 Uppsala, Sweden
| | - Marius-Adrian Husanu
- Swiss Light Source, Paul Scherrer Institute, 5232 Villigen-PSI, Switzerland
- National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania
| | - Yunzhong Chen
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xiaoqiang Wang
- Swiss Light Source, Paul Scherrer Institute, 5232 Villigen-PSI, Switzerland
| | - Thorsten Schmitt
- Swiss Light Source, Paul Scherrer Institute, 5232 Villigen-PSI, Switzerland
| | - Milan Radovic
- Swiss Light Source, Paul Scherrer Institute, 5232 Villigen-PSI, Switzerland
| | - Naoto Nagaosa
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
- Department of Applied Physics, University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Andrey S Mishchenko
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Roser Valentí
- Institut für Theoretische Physik, Goethe-Universität Frankfurt am Main, Max-von-Laue-Strasse 1, 60438 Frankfurt am Main, Germany
| | - Nini Pryds
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Vladimir N Strocov
- Swiss Light Source, Paul Scherrer Institute, 5232 Villigen-PSI, Switzerland
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5
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Chikina A, Lechermann F, Husanu MA, Caputo M, Cancellieri C, Wang X, Schmitt T, Radovic M, Strocov VN. Orbital Ordering of the Mobile and Localized Electrons at Oxygen-Deficient LaAlO 3/SrTiO 3 Interfaces. ACS NANO 2018; 12:7927-7935. [PMID: 29995384 DOI: 10.1021/acsnano.8b02335] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Interfacing different transition-metal oxides opens a route to functionalizing their rich interplay of electron, spin, orbital, and lattice degrees of freedom for electronic and spintronic devices. Electronic and magnetic properties of SrTiO3-based interfaces hosting a mobile two-dimensional electron system (2DES) are strongly influenced by oxygen vacancies, which form an electronic dichotomy, where strongly correlated localized electrons in the in-gap states (IGSs) coexist with noncorrelated delocalized 2DES. Here, we use resonant soft-X-ray photoelectron spectroscopy to prove the eg character of the IGSs, as opposed to the t2g character of the 2DES in the paradigmatic LaAlO3/SrTiO3 interface. We furthermore separate the d xy and d xz/d xz orbital contributions based on deeper consideration of the resonant photoexcitation process in terms of orbital and momentum selectivity. Supported by a self-consistent combination of density functional theory and dynamical mean field theory calculations, this experiment identifies local orbital reconstruction that goes beyond the conventional eg- vs-t2g band ordering. A hallmark of oxygen-deficient LaAlO3/SrTiO3 is a significant hybridization of the eg and t2g orbitals. Our findings provide routes for tuning the electronic and magnetic properties of oxide interfaces through "defect engineering" with oxygen vacancies.
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Affiliation(s)
- Alla Chikina
- Swiss Light Source, Paul Scherrer Institute , Villigen CH-5232 , Switzerland
| | - Frank Lechermann
- Institut für Theoretische Physik , Universität Hamburg , Jungiusstrasse 9 , Hamburg DE-20355 , Germany
| | - Marius-Adrian Husanu
- Swiss Light Source, Paul Scherrer Institute , Villigen CH-5232 , Switzerland
- National Institute of Materials Physics , Atomistilor 405A , Magurele RO-077125 , Romania
| | - Marco Caputo
- Swiss Light Source, Paul Scherrer Institute , Villigen CH-5232 , Switzerland
| | - Claudia Cancellieri
- Swiss Light Source, Paul Scherrer Institute , Villigen CH-5232 , Switzerland
- Empa, Swiss Federal Laboratories for Materials Science & Technology , Ueberlandstrasse 129 , Duebendorf CH-8600 , Switzerland
| | - Xiaoqiang Wang
- Swiss Light Source, Paul Scherrer Institute , Villigen CH-5232 , Switzerland
| | - Thorsten Schmitt
- Swiss Light Source, Paul Scherrer Institute , Villigen CH-5232 , Switzerland
| | - Milan Radovic
- Swiss Light Source, Paul Scherrer Institute , Villigen CH-5232 , Switzerland
| | - Vladimir N Strocov
- Swiss Light Source, Paul Scherrer Institute , Villigen CH-5232 , Switzerland
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