|
1
|
Yu M, Li H, Liu H, Qin F, Gao F, Hu Y, Dai M, Wang L, Feng W, Hu P. Synthesis of Two-Dimensional Alloy Ga 0.84In 0.16Se Nanosheets for High-Performance Photodetector. ACS APPLIED MATERIALS & INTERFACES 2018; 10:43299-43304. [PMID: 30507146 DOI: 10.1021/acsami.8b15317] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The electronic and optoelectronic properties of 2D alloy Ga0.84In0.16Se were investigated for the first time. 2D Ga0.84In0.16Se FETs show p-type conduction behaviors. 2D Ga0.84In0.16Se photodetectors show high photoresponse in the visible light range of 500 to 700 nm. The responsivity value is 258 A/W for alloy photodetector (500 nm illumination), and it is 92 times and 20 times higher than those of 2D GaSe and InSe photodetectors, respectively. Moreover, the alloy photodetector exhibits good photoresponse stability and rapid photoresponse time. Our results demonstrate that 2D alloy Ga0.84In0.16Se has great potential for application in photodetection and sensor devices.
Collapse
Affiliation(s)
- Miaomiao Yu
- Department of Chemistry and Chemical Engineering, College of Science , Northeast Forestry University , Harbin , 150040 , China
| | - Hang Li
- Innovation Lab of Space Robot System, Space Robotics Engineering Center, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , Changchun 130033 , China
| | - He Liu
- Department of Chemistry and Chemical Engineering, College of Science , Northeast Forestry University , Harbin , 150040 , China
| | - Fanglu Qin
- Department of Chemistry and Chemical Engineering, College of Science , Northeast Forestry University , Harbin , 150040 , China
| | - Feng Gao
- Key Lab of Microsystem and Microstructure of Ministry of Education , Harbin Institute of Technology , Harbin 150080 , China
| | - Yunxia Hu
- Key Lab of Microsystem and Microstructure of Ministry of Education , Harbin Institute of Technology , Harbin 150080 , China
| | - Mingjin Dai
- Key Lab of Microsystem and Microstructure of Ministry of Education , Harbin Institute of Technology , Harbin 150080 , China
| | - Lifeng Wang
- Institute for Frontier Materials , Deakin University , 75 Pigdons Road , Waurn Ponds, Geelong, Victoria 3216 , Australia
| | - Wei Feng
- Department of Chemistry and Chemical Engineering, College of Science , Northeast Forestry University , Harbin , 150040 , China
| | - PingAn Hu
- Key Lab of Microsystem and Microstructure of Ministry of Education , Harbin Institute of Technology , Harbin 150080 , China
| |
Collapse
|
|
2
|
Bernard JE, Zunger A. Ordered-vacancy-compound semiconductors: Pseudocubic CdIn2Se4. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 37:6835-6856. [PMID: 9943954 DOI: 10.1103/physrevb.37.6835] [Citation(s) in RCA: 49] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
|
|
3
|
Araki H, Nishikawa S, Tanbo T, Tatsuyama C. Low-energy electron-loss spectroscopy of GaSe and InSe. PHYSICAL REVIEW. B, CONDENSED MATTER 1986; 33:8164-8170. [PMID: 9938208 DOI: 10.1103/physrevb.33.8164] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
|
|
4
|
|
|
5
|
Gouskov A, Camassel J, Gouskov L. Growth and characterization of III–VI layered crystals like GaSe, GaTe, InSe, GaSe1-xTex and GaxIn1-xSe. ACTA ACUST UNITED AC 1982. [DOI: 10.1016/0146-3535(82)90004-1] [Citation(s) in RCA: 95] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
|
|
6
|
Depeursinge Y, Baldereschi A. Polytypism and layer-layer interaction in the III–VI layer semiconductors. ACTA ACUST UNITED AC 1981. [DOI: 10.1016/0378-4363(81)90268-0] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
|
|
7
|
X-ray photoemission spectrum of the III–VI layer compound GaTe in the region of the valence bands. ACTA ACUST UNITED AC 1981. [DOI: 10.1016/0378-4363(81)90215-1] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
|