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For: Ko CH, Lee WJ. Formation of Al2O3–TiO2 bilayer using atomic layer deposition and its application to dynamic random access memory. J Solid State Electrochem 2007. [DOI: 10.1007/s10008-007-0359-4] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
Number Cited by Other Article(s)
1
Dutta S, Ramesh S, Shankar B, Gopalan S. Effect of PVD process parameters on the quality and reliability of thin (10–30 nm) Al2O3 dielectrics. APPLIED NANOSCIENCE 2011. [DOI: 10.1007/s13204-011-0033-0] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/01/2022]
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