The Preparation of Transparent Organic Field Effect Transistor Using a Novel EDOT Functional Styrene Copolymer Insulator With a PEDOT:PSS Gate Electrode

Fully degradable, transparent, and flexible photodetectors using ZnO nanowires and PEDOT:PSS based nanofibres

Transparent light detection devices are attractive for emerging see-through applications such as augmented reality, smart windows and optical communications using light fidelity (Li-Fi). Herein, we present flexible and transparent photodetectors (PDs) using conductive poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS): Ag nanowires (NWs) based nanofibres and zinc oxide (ZnO) NWs on a transparent and degradable cellulose acetate (CA) substrate. The electrospun (PEDOT:PSS): Ag NW-based nanofibres exhibit a sheet resistance of 11 Ω/sq and optical transmittance of 79% (at 550 nm of wavelength). The PDs comprise of ZnO NWs, as photosensitive materials, bridging the electrode based on conductive nanofibres on CA substrate. The developed PDs exhibit high responsivity (1.10 ×106 A/W) and show excellent stability under dynamic exposure to ultraviolet (UV) light, and on both flat and curved surfaces. The eco-friendly PDs present here can degrade naturally at the end of life - thus offering an electronic waste-free solution for transparent electrodes and flexible optoelectronics applications.

Free-Standing, Water-Resistant, and Conductivity-Enhanced PEDOT:PSS Films from In Situ Polymerization of 3-Hydroxymethyl-3-Methyl-Oxetane

Free-standing films based on conducting polymers, such as poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT:PSS), offer many benefits over traditional metal electrodes for applications in flexible electronics. However, to ensure structural integrity when contacting aqueous environments and high levels of electrical conductivity, solution-processed polymers require additives that act as crosslinking agents and conductivity enhancers. In this work, a new approach is presented to fabricate water-resistant free-standing films of PEDOT:PSS and simultaneously increase their conductivity, using an oxetane compound as an additive. It is shown that at moderate temperatures, oxetane polymerizes within the PEDOT:PSS acidic medium, forming hydroxymethyl-substituted polyether compounds that form a network upon crosslinking with PSS. The polymer composite films show self-sustainability, structural stability in aqueous environments, and enhanced conductivity. Finally, the potential of the free-standing films as health-monitoring electrodes, specifically for human electrocardiography, is explored.

Water-Soluble Reactive Polymer Blends for Stable Memory Layers in Low-Voltage Nonvolatile Organic Memory Transistors with High Mobility and Data-Retention Characteristics

Here we demonstrate low-voltage nonvolatile organic memory transistors, featuring high charge-carrier mobility and outstanding data-retention characteristics, by employing water-soluble reactive polymer blends as a gate-insulating memory layer. Blend films of poly(vinyl alcohol) (PVA) and poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAMPSA) (PVA:PAMPSA) were prepared from their aqueous solutions with various molar ratios of PAMPSA (0∼18 mol%) and thermally annealed at 70 ℃ and 110 ℃. Organic field-effect transistors (OFETs) were fabricated by depositing poly(3-hexylthiophene) (P3HT) channel layers on the thermally-treated PVA:PAMPSA films. Results showed that the hole mobility of OFETs was remarkably increased (ca. 294 times at 70 ℃ and ca. 42 times at 110 ℃) by adding only 2 mol% PAMPSA to the PVA films and further improved at 10 mol% PAMPSA (>11.7 cm2/Vs at 70 ℃ and >3.8 cm2/Vs at 110 ℃). The hysteresis characteristics were rather strengthened for the PVA:PAMPSA layers by annealing at 110 ℃ due to the formation of cross-linking sites, even though the OFETs with the pristine PVA layers did almost lose hysteresis characteristics at 110 ℃. The optimized OFETs with the PVA:PAMPSA layers (10 mol%, 110 ℃) delivered excellent data retention characteristics during >10,000 memory cycles at a voltage range of -5 ∼ +5 V. This article is protected by copyright. All rights reserved.