Applications of Accelerators and Radiation Sources in the Field of Space Research and Industry

Effects of Electronic Irradiation on the Characteristics of the Silicon Magnetic Sensitive Transistor

This work researched the effects of irradiation on the current-voltage characteristics and voltage magnetic sensitivity of the silicon magnetic sensitive transistor (SMST). The 1-MeV electron irradiation source was used to irradiate the SMST. The irradiation fluences were 1 × 10¹² e/cm², 1 × 10¹³ e/cm² and 1 × 10¹⁴ e/cm², respectively (the irradiation flux was 1 × 10¹⁰ cm^-2·s^-1). The experimental results demonstrate that the collector current (I_C) of the SMST occurs attenuation after irradiation under the same collector voltage (V_CE) and the base current (I_B). The attenuated rate of the I_C increases obviously with the enhance of electron irradiation fluence when the I_B is the same. Moreover, the attenuated rate of the I_C increases slight with the rise of the I_B when the electron irradiation fluence is the same. When the supply voltage is 5.0 V (R_L = 1.5 kΩ) and the I_B is 4.0 mA, the voltage magnetic sensitivity (S_V) of the SMST occurs attenuate after irradiation. The attenuated rate of the S_V increases with the enhance of electron irradiation fluence.

An Innovative Real-Time Dosimeter for Radiation Hardness Assurance Tests

The study of the effects of the radiation dose on devices and materials is a topic of high interest in several fields, including radiobiology, space missions, microelectronics, and high energy physics. In this paper, a new method, based on radiochromic film dosimetry, is proposed for real-time dose assessment in radiation hardness assurance tests. This method allows for correlating the radiation dose at which devices are exposed to the radiation effects (malfunctioning and/or breakdown). In previous studies, it has already been demonstrated that a system, based on optical fibers and a spectrometer, allows for the real-time dose assessment of radiochromic films. The current study not only validates our previous results, but shows that it is possible to apply the new method to an actual radiation environment for the real-time measurement of the dose delivered to a device in radiation hardness assurance tests. This new dosimeter can be used in different radiation environments for a wide dose range, from a few Gy to a few MGy. This high sensitivity can be reached by changing the radiochromic film type and/or the parameters used for the analysis.