Attique S, Ali N, Ali S, Khatoon R, Li N, Khesro A, Rauf S, Yang S, Wu H. A Potential Checkmate to Lead: Bismuth in Organometal Halide Perovskites, Structure, Properties, and Applications.
ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020;
7:1903143. [PMID:
32670745 PMCID:
PMC7341095 DOI:
10.1002/advs.201903143]
[Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/04/2019] [Revised: 01/30/2020] [Indexed: 06/11/2023]
Abstract
The remarkable optoelectronic properties and considerable performance of the organo lead-halide perovskites (PVKs) in various optoelectronic applications grasp tremendous scientific attention. However, the existence of the toxic lead in these compounds is threatening human health and remains a major concern in the way of their commercialization. To address this issue, numerous nontoxic alternatives have been reported. Among these alternatives, bismuth-based PVKs have emerged as a promising substitute because of similar optoelectronic properties and extended environmental stability. This work communicates briefly about the possible lead-alternatives and explores bismuth-based perovskites comprehensively, in terms of their structures, optoelectronic properties, and applications. A brief description of lead-toxification is provided and the possible Pb-alternatives from the periodic table are scrutinized. Then, the classification and crystal structures of various Bi-based perovskites are elaborated on. Detailed optoelectronic properties of Bi-based perovskites are also described and their optoelectronic applications are abridged. The overall photovoltaic applications along with device characteristics (i.e., V OC, J SC, fill factor, FF, and power conversion efficiency, PCE), fabrication method, device architecture, and operational stability are also summarized. Finally, a conclusion is drawn where a brief outlook highlights the challenges that hamper the future progress of Bi-based optoelectronic devices and suggestions for future directions are provided.
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