Ultraviolet photoelectron spectroscopy of semiconductor clusters: Silicon and germanium

Size-selected anion photoelectron spectroscopy and density functional theory calculations of ferromagnetic Fe2Cn-/0 (n = 2-6) clusters

The structural and electronic properties of iron carbide clusters Fe2Cn-/0 (n = 2-6) were investigated using size-selected anion photoelectron spectroscopy and theoretical calculations. The adiabatic and vertical detachment energies of Fe2Cn- (n = 2-6) were obtained from their photoelectron spectra. The ground state structures of Fe2Cn- (n = 2-6) were determined by comparing the theoretical results with the experimental data. The most stable isomers of Fe2Cn- adopt planar structures, except for Fe2C5-, in which the carbon atoms deviate slightly from the plane. The ground state structures of neutral Fe2Cn clusters are generally similar to their corresponding anions, except for Fe2C3, which adopts a planar cyclic structure containing a C3 unit. The magnetic moments of the Fe2Cn- clusters are 7μB for even sizes and 5μB for odd sizes, whereas those of neutral Fe2Cn are 8μB (6μB for n = 2) for even sizes and 6μB for odd sizes. The magnetic moments primarily originate from Fe atoms. The Fe-Fe bond lengths increase gradually with the growth of the cluster size, resulting in the transition from double-bond to single-bond character. The spin multiplicities and relative stabilities of Fe2Cn- exhibit odd-even alternations.

Semiconducting Polymers for Oxygen Evolution Reaction under Light Illumination

Sunlight-driven water splitting to produce hydrogen fuel has stimulated intensive scientific interest, as this technology has the potential to revolutionize fossil fuel-based energy systems in modern society. The oxygen evolution reaction (OER) determines the performance of overall water splitting owing to its sluggish kinetics with multielectron transfer processing. Polymeric photocatalysts have recently been developed for the OER, and substantial progress has been realized in this emerging research field. In this Review, the focus is on the photocatalytic technologies and materials of polymeric photocatalysts for the OER. Two practical systems, namely, particle suspension systems and film-based photoelectrochemical systems, form two main sections. The concept is reviewed in terms of thermodynamics and kinetics, and polymeric photocatalysts are discussed based on three key characteristics, namely, light absorption, charge separation and transfer, and surface oxidation reactions. A satisfactory OER performance by polymeric photocatalysts will eventually offer a platform to achieve overall water splitting and other advanced applications in a cost-effective, sustainable, and renewable manner using solar energy.

Identification of Magic Numbers in Homonuclear Clusters: The ε3 Stability Ranking Function

With the rise of cluster-assembled materials, an index that is able to rank and identify stable clusters or molecules is of great interest in materials sciences and engineering. In the present work, we applied a stability ranking function (ε³) in nanoclusters formed by simple metals (Na, Mg), main group elements (Al), or transition metals (Ti, Cu). The ε³ function parameters are molecular properties derived from the wave function. These parameters can be divided into kinetic and thermodynamic descriptors, in which the kinetic descriptors are the ionization potential and electronic excitation energy, while the atomization free Gibbs energy is the thermodynamic one. This simple ε³ function was able to identify the possible magic numbers of the studied clusters across the periodic table in a good agreement with previous experimental and theoretical works.

The stability, electronic, and magnetic properties of rare-earth doped silicon-based clusters

The rare-earth doped silicon-based clusters exhibit remarkable structural, physical, and chemical properties, which make them attractive candidates as building units in designing of cluster-based materials with special optical, electronic, and magnetic properties. The structural, stability, electronic, and magnetic properties of pure silicon Si_n + 1 (n = 1-9) and rare-earth doped clusters Si_nEu (n = 1-9) are investigated using the "stochastic kicking" (SK) global search technique combined with density functional theory (DFT) calculations. It was found that: 1) the ground state structures of pure silicon clusters tend to form compact structures rather than cages with the increase of cluster size; 2) the ground state structures for doped species were found to be additional or substitutional sites, and the rare-earth atoms tend to locate on the surface of the silicon clusters; 3) the average binding energy of the doped clusters increased gradually and exhibited the final phenomenon of saturation with the increase of clusters size. The average binding energy of doped clusters was slightly higher than that of pure silicon clusters of the same size, which indicated that the rare-earth atom encapsulated by silicon enhanced the stability of the silicon clusters to some degree; 4) the doped clusters have strong total magnetic moments, which mainly originated from the contribution of rare-earth atoms, whereas the contribution of silicon atoms were almost negligible. As the cluster size increased, the total magnetic moments of binary mixed clusters tended to be stable.

Stability and Reactivity of Silicon Magic Numbers Doped with Aluminum and Phosphorus Atoms

The progressive scaling down of the silicon-based electronics has allowed to develop devices at nanometer scale, requiring new engineering techniques guided by fundamental chemical and physical concepts. Particularly, the nanostructured cluster systems are promising materials since their physical-chemical properties are sensitive to its shape, size, and chemical components, such that completely different materials can be produced by the simple addition or removal of a single atom. These size-tunable properties can open a new area in materials science and engineering. In the present work, quantum chemical methods were used to study the chemical substitution effects caused by subvalent (aluminum) and supervalent (phosphorus) atoms in the physical-chemical properties of some small silicon clusters, which demonstrate high stability, called magic numbers. The changes in the electronic structure and chemical acceptance to the dopants were evaluated with respect to ionization potential, electronic excitation energy, stability, and reactivity parameters. Taken together, these results enable to identify the most stable silicon-doped clusters. Regarding electrophilic reactions, Si₁₀P is the most favorable system, while for nucleophilic reactions, none of the doped clusters resulted in higher stability.

Predicting the structural evolution of Gen- (3 ≤ n ≤ 20) clusters: an anion photoelectron spectroscopy simulation

Spectroscopic evidence for the structural evolution of Gen- (3 ≤ n ≤ 20) clusters is provided by means of simulated anion photoelectron spectra (PES). Both adiabatic detachment energies and HOMO-LUMO gaps of the selected low-lying candidates match well with those measured in experiment. This work demonstrates that PES is a highly sensitive technique for probing both electronic and geometric structures of atomic clusters, whose structural evolution is an elemental signature with characteristic features.

Medium-sized [Formula: see text] (n = 14-20) clusters: a combined study of photoelectron spectroscopy and DFT calculations

Size-selected anionic silicon clusters, [Formula: see text] (n  =  14-20), have been investigated by photoelectron spectroscopy and density functional theory (DFT) calculations. Low-energy structures of the clusters are globally searched for by using a genetic algorithm based on DFT calculations. The electronic density of states and vertical detachment energies have been simulated by using ten DFT functionals and compared to the experimental results. We systematically evaluated the DFT functionals for the calculation of the energetics of silicon clusters. CCSD(T) single-point energies based on MP2 optimized geometries for selected isomers of [Formula: see text] are also used as benchmark for the energy sequence. The HSE06 functional with aug-cc-pVDZ basis set is found to show the best performance. Our global minimum search corroborates that most of the lowest-energy structures of [Formula: see text] (n  =  14-20) clusters can be derived from assembling tricapped trigonal prisms in various ways. For most sizes previous structures are confirmed, whereas for [Formula: see text] a new structure has been found.

A quantitative tool to establish magic number clusters, ε3, applied in small silicon clusters, Si2-11

The present work focuses on establishing a function to rank the stability of small silicon clusters to characterize their magic numbers. This function is composed by a thermodynamic descriptor, the atomization Gibbs free energy, and indirect kinetic descriptors, the highest occupied molecular orbital energy and the lowest excitation energy of each system. The silicon clusters geometries were optimized using density functional theory within a hybrid meta-GGA approximation (M06), while the electronic energy was corrected by single-point calculation using CASPT2 level of theory to obtain the molecular properties. Both methodologies were combined with polarized diffused triple zeta, 6-311++G(3df,3pd), basis set for all atoms. Some molecular properties and their combinations were considered to create the aforementioned function to represent the clusters chemical stability and their magic numbers. The chosen stability ranking function, called ε³, presents results in agreement with the previous mass spectrometry experimental data identifying 4, 6, 7 and 10 as magic numbers for small silicon clusters. We believe this stability ranking function can be useful to study other intramolecular atomic and molecular clusters. Graphical abstract Stability ranking function, ε³₁, applied on Si_n (n = 2 - 11) clusters showing Fukui's functions for the Si_n (n = 2 - 11) obtained by the electronic density difference through CASPT2//M06/6-311++G(3df,3pd) with an isosurface value equal to 0.003.

B3@Si12+: strong stabilizing effects of a triatomic cyclic boron unit on tubular silicon clusters

Remarkably strong effects of the aromatic B₃ cycle in stabilizing tubular silicon clusters were observed for the first time. The doped cluster B₃@Si₁₂⁺ presents a novel structural motif for silicon clusters in which a B₃ cycle is encapsulated into a (6 × 2) Si₁₂ prism giving rise to a high symmetry stable tubular structure (D_3h). A large amount of electron density is transferred to the boron cycle, and the B₃^δ- unit not only retains a delocalized bonding pattern within the Si₁₂ prism but also enables a two-fold aromaticity for the resulting silicon double ring. This double ring can be used as a building block to make longer nanotubes.

Slow Photoelectron Velocity-Map Imaging of Cryogenically Cooled Anions

Slow photoelectron velocity-map imaging spectroscopy of cryogenically cooled anions (cryo-SEVI) is a powerful technique for elucidating the vibrational and electronic structure of neutral radicals, clusters, and reaction transition states. SEVI is a high-resolution variant of anion photoelectron spectroscopy based on photoelectron imaging that yields spectra with energy resolution as high as 1-2 cm^-1. The preparation of cryogenically cold anions largely eliminates hot bands and dramatically narrows the rotational envelopes of spectral features, enabling the acquisition of well-resolved photoelectron spectra for complex and spectroscopically challenging species. We review the basis and history of the SEVI method, including recent experimental developments that have improved its resolution and versatility. We then survey recent SEVI studies to demonstrate the utility of this technique in the spectroscopy of aromatic radicals, metal and metal oxide clusters, nonadiabatic interactions between excited states of small molecules, and transition states of benchmark bimolecular reactions.

4d and 5d bimetal doped tubular silicon clusters Si12M2 with M = Nb, Ta, Mo and W: a bimetallic configuration model

M₂Si₁₂ clusters are found in a bimetallic tubular structure where one metal atom is located in the central region of a (6/6) tube, and the other is capped outside to a hexagonal face. A bimetallic configuration containing 11 MOs, partially or fully occupied by up to 22 electrons, was established to interpret their stability.

Thermal radiation and fragmentation pathways of photo-excited silicon clusters

The fragmentation of laser heated silicon clusters was studied by time-of-flight mass spectrometry. For Si(n)(+) (n = 5-19, 21), the lowest energy fragmentation pathways were identified as the metastable decay channel occurring after the primary acceleration of the ions. The radiative cooling of laser excited Si(n)(+) (n = 5-9, 11, and 13) was quantified via its quenching effect on the amount of metastable fragmentation. The quenching varied strongly with cluster size, from no observable amount for Si7(+) to a cooling constant of 3 ⋅ 10(5) s(-1) for Si13(+). In addition, based on the observed fragmentation channels, the ionization energies and the relative binding energies of the clusters were partially ordered, and several ionization energies have been bracketed more precisely.

A versatile, pulsed anion source utilizing plasma-entrainment: characterization and applications

A novel pulsed anion source has been developed, using plasma entrainment into a supersonic expansion. A pulsed discharge source perpendicular to the main gas expansion greatly reduces unwanted "heating" of the main expansion, a major setback in many pulsed anion sources in use today. The design principles and construction information are described and several examples demonstrate the range of applicability of this anion source. Large OH(-)(Ar)n clusters can be generated, with over 40 Ar solvating OH(-). The solvation energy of OH(-)(Ar)n, where n = 1-3, 7, 12, and 18, is derived from photoelectron spectroscopy and shows that by n = 12-18, each Ar is bound by about 10 meV. In addition, cis- and trans- HOCO(-) are generated through rational anion synthesis (OH(-) + CO + M → HOCO(-) + M) and the photoelectron spectra compared with previous results. These results, along with several further proof-of-principle experiments on solvation and transient anion synthesis, demonstrate the ability of this source to efficiently produce cold anions. With modifications to two standard General Valve assemblies and very little maintenance, this anion source provides a versatile and straightforward addition to a wide array of experiments.

Mn2@Si15: the smallest triple ring tubular silicon cluster

The smallest triple ring tubular silicon cluster Mn₂@Si₁₅ is reported for the first time.

Electronic Properties of Silicon - M Binary Clusters (M = C & Na)

Electronic properties of silicon-carbon and silicon-sodium binary clusters, produced by laser vaporization, were investigated by photoelectron spectroscopic or photoionization spectroscopic method. The photoelectron spectra of the C1Sim-1- clusters are similar to those of pure Sim- clusters in the peak positions and their envelopes, which is attributed to the similar electronic structure of Si and C atoms, leading to a similar geometry. In contrast, the similarity in the photoelectron spectra is not observed between Cn- and Cn-1Si1 clusters, which is attributed to a change in their geometry; from chain to ring.

The ionization energies (Ei) of the SinNam clusters (l≤n≤15) were determined from the threshold energy of their ionization efficiency curves. The clear parallelism between the ionization energy of SinNa and the electron affinity (EA) of Sin is found; there are three local minima at n=4, 7 and 10. This implies the facts that (1) the structure of the SinNa clusters keeps the frame of the corresponding Sin cluster unchanged and that (2) the parentage of singly occupied molecular orbital (SOMO) of SinNa is the LUMO of Sin. Furthermore, the EAs of SinNa (4≤n≤7) were determined from the threshold energy in the photoelectron spectra of SinNa". When the EAs of SinNa are compared with those of Sin, the EAs decrease at n=4-6, but the EA increases at n=7. The results of ab initio calculation show that the Na atom is bound by two Si atoms (bridge site) at n=4-6, whereas it is bound by one Si atom (apex site) at n=7.

Atomic and Electronic Structure of Germanium Clusters at Finite Temperature Using Finite Difference Methods

Determining the electronic and structural properties of semiconductor clusters is one of the outstanding problems in materials science. The existence of numerous structures with nearly identical energies makes it very difficult to determine a realistic ground state structure. Moreover, even if an effective procedure can be devised to predict the ground state structure, questions can arise about the relevancy of the structure at finite temperatures. Kinetic effects and non-equilibrium structures may dominate the structural configurations present in clusters created under laboratory conditions. We illustrate theoretical techniques for predicting the structure and electronic properties of small germanium clusters. Spefically, we illustate that the detailed agreement between theoretical and experimental features can be exploited to identify the relevant isomers present under experimental conditions.

Interaction of C(59)Si with Si based clusters: a study of Janus nanostructures

Using density functional theory with the generalized gradient approximation (GGA), we show that carbon-silicon Janus anisotropic nanostructures can be synthesized by using C(59)Si heterofullerene as a seed where the doped Si atom preferentially attaches to some well-known silicon and silicon based clusters such as Si(10), WSi(12), TiSi(16), and BaSi(20). The interaction energy of these clusters with C(59)Si varies from 0.9 to 1.9 eV. The anisotropy of the resulting carbon-silicon Janus structures produces large dipole moments (4-9 D), anisotropic distributions of electronic orbitals, and the anisotropic reactivity.