In situ rutherford backscattering spectroscopy for electrochemical interphase analysis

Revealing the formation dynamics of the electric double layer by means of in-situ Rutherford backscattering spectrometry

We report on a new versatile experimental setup for in situ Rutherford backscattering spectrometry at solid-liquid interfaces which enables investigations of electric double layers directly and in a quantitative manner. A liquid cell with a three-electrode arrangement is mounted in front of the beam line, and a thin Si₃N₄ window (thickness down to 150 nm) separates the vacuum of the detector chamber from the electrolyte in the cell. By minimizing the contribution of the window to the measurement, a large variety of elements at the solid-liquid interface with sensitivities far below one monolayer can be monitored. The attachment of Ba onto the Si₃N₄ surface as a function of contact time and pH value of the electrolyte solution was chosen as an example system. From our measurement, we can not only follow the evolution of the double layer but also derive limits for the point of zero charge for the Si₃N₄ surface. Our findings of 5.7≤pH_PZC≤6.2 are in good agreement with values found in the literature obtained by other techniques. Despite focusing on a specific system in this work, the presented setup allows for a large variety of in situ investigations at solid-liquid interfaces such as, but not limited to, tracing electrochemical reactions and monitoring segregation, adsorption, and dissolution and corrosion processes.

Thin film depth profiling by ion beam analysis

The analysis of thin films is of central importance for functional materials, including the very large and active field of nanomaterials. Quantitative elemental depth profiling is basic to analysis, and many techniques exist, but all have limitations and quantitation is always an issue. We here review recent significant advances in ion beam analysis (IBA) which now merit it a standard place in the analyst's toolbox. Rutherford backscattering spectrometry (RBS) has been in use for half a century to obtain elemental depth profiles non-destructively from the first fraction of a micron from the surface of materials: more generally, "IBA" refers to the cluster of methods including elastic scattering (RBS; elastic recoil detection, ERD; and non-Rutherford elastic backscattering, EBS), nuclear reaction analysis (NRA: including particle-induced gamma-ray emission, PIGE), and also particle-induced X-ray emission (PIXE). We have at last demonstrated what was long promised, that RBS can be used as a primary reference technique for the best traceable accuracy available for non-destructive model-free methods in thin films. Also, it has become clear over the last decade that we can effectively combine synergistically the quite different information available from the atomic (PIXE) and nuclear (RBS, EBS, ERD, NRA) methods. Although it is well known that RBS has severe limitations that curtail its usefulness for elemental depth profiling, these limitations are largely overcome when we make proper synergistic use of IBA methods. In this Tutorial Review we aim to briefly explain to analysts what IBA is and why it is now a general quantitative method of great power. Analysts have got used to the availability of the large synchrotron facilities for certain sorts of difficult problems, but there are many much more easily accessible mid-range IBA facilities also able to address (and often more quantitatively) a wide range of otherwise almost intractable thin film questions.