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For: Blank P, Wittmaack K, Schulz F. The influence of sputtering, range shortening and stress-induced outdiffusion on the retention of xenon implanted in silicon. ACTA ACUST UNITED AC 1976. [DOI: 10.1016/0029-554x(76)90763-1] [Citation(s) in RCA: 36] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
Number Cited by Other Article(s)
1
Hautala M. Monte-Carlo calculation of low energy ion collection in the presence of sputtering, range shortening, knock-on and diffusion. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/00337578008209265] [Citation(s) in RCA: 33] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
2
Thompson DA. High density cascade effects. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/00337578108229885] [Citation(s) in RCA: 221] [Impact Index Per Article: 12.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
3
Carter G, Armour DG, Donnelly SE, Ingram DC, Webb RP. The injection of inert gas ions into solids: Their trapping and escape. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/00337578008207113] [Citation(s) in RCA: 31] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
4
Seah MP, Clifford CA, Green FM, Gilmore IS. An accurate semi-empirical equation for sputtering yields I: for argon ions. SURF INTERFACE ANAL 2005. [DOI: 10.1002/sia.2032] [Citation(s) in RCA: 102] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
5
On the fluence dependence of the sputtering yield for low-energy noble gas ions. ACTA ACUST UNITED AC 1982. [DOI: 10.1007/bf00617769] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
6
Gras-Marti A, Jimenez-Rodriguez J, Peon-Fernandez J, Rodriguez-Vidal M, Tognetti N, Carter G, Nobes M, Armour D. Atomic mixing effects on high fluence Ge implantation into Si at 40 keV. ACTA ACUST UNITED AC 1982. [DOI: 10.1016/0029-554x(82)90562-6] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
7
Wittmaack K. Implications in the use of reactive ion bombardment for secondary ion yield enhancement. ACTA ACUST UNITED AC 1981. [DOI: 10.1016/0378-5963(81)90045-3] [Citation(s) in RCA: 40] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
8
Malherbe JB, Hofmann S. Low energy nitrogen implantation profiles in cobalt using AES. SURF INTERFACE ANAL 1980. [DOI: 10.1002/sia.740020507] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
9
Carter G, Webb R, Collins R. Implant ion collection in the presence of radiation enhanced diffusion and preferential sputtering of implant. ACTA ACUST UNITED AC 1979. [DOI: 10.1080/01422447908229237] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
10
Kempf J. AES investigations of Ar+ ion retention in Si during Ar sputtering. ACTA ACUST UNITED AC 1978. [DOI: 10.1007/bf00931420] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
11
Wach W, Wittmaack K. Comparison of xenon retention in ion implanted silicon dioxide and oxygen-doped silicon. ACTA ACUST UNITED AC 1978. [DOI: 10.1016/0029-554x(78)90870-4] [Citation(s) in RCA: 24] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
12
Christodoulides C, Grant W, Williams J. The determination of high-dose implantation profiles using low-angle Rutherford backscattering. ACTA ACUST UNITED AC 1978. [DOI: 10.1016/0029-554x(78)90863-7] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
13
Wittmaack K, Blank P, Wach W. High fluence retention of noble gases implanted in silicon. ACTA ACUST UNITED AC 1978. [DOI: 10.1080/00337577808237907] [Citation(s) in RCA: 39] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
14
Kempf J, Kaus G. 3 to 15 keV Ar+ induced Auger electron emission from Si and Ar. ACTA ACUST UNITED AC 1977. [DOI: 10.1007/bf00882890] [Citation(s) in RCA: 19] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
15
Bhattacharya RS, Van Der Veen JF, Kerkdijk CBW, Saris FW. Bombardment induced light emission from silicon, silicon nitride and silicon carbide surfaces. ACTA ACUST UNITED AC 1977. [DOI: 10.1080/00337577708237452] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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