N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit

A Novel N-Type Molecular Dopant With a Closed-Shell Electronic Structure Applicable to the Vacuum-Deposition Process

Rational design, synthesis, and characterization of a new efficient versatile n-type dopant with a closed-shell electronic structure are described. By employing the tetraphenyl-dipyranylidene (DP0) framework with two 7π-electron systems modified with N,N-dimethylamino groups as the strong electron-donating substituent, 2,2',6,6'-tetrakis[4-(dimethylamino)phenyl]-4,4'-dipyranylidene (DP7), a closed-shell molecule with an extremely high-lying energy level of the highest occupied molecular orbital, close to 4.0 eV below the vacuum level, is successfully developed. Thanks to its thermal stability, DP7 is applicable to vacuum deposition, which allows utilization of DP7 in bulk doping for the development of n-type organic thermoelectric materials and contact doping for reducing contact resistance in n-type organic field-effect transistors. As vacuum-deposition processable n-type dopants are very limited, DP7 stands out as a useful n-type dopant, particularly for the latter purpose.

Alkylated Benzodithienoquinolizinium Salts as Possible Non-Fullerene Organic N-Type Semiconductors: An Experimental and Theoretical Study

Three photobicyclized benzodithienoquinolizinium tetrafluoroborates (BPDTQBF4) were prepared and evaluated by UV-Vis and fluorescence spectral, electrochemical analysis, and by theoretical calculations as possible organic n-type semiconductors. Evaluation and comparison of their LUMO levels, HOMO-LUMO energy gaps as monomeric and π-stacked dimers with those of other materials, suggest their potential as organic n-type semiconductors. Calculations of their relative charge carrier mobilities confirmed this potential for one derivative with a long (C-14) alkyl chain appended to the polycyclic planar π-system.

Structural and electronic properties of a CN fullerene with N = 20, 60, 80, 180, and 240

In this paper, the structural and electronic properties of a C_N fullerene with N = 20, 60, 80, 180, and 240 have been investigated using a sp³ tight-binding model. The analytical expressions for the calculation of the total number of carbon atoms, hexagons, pentagons, and bonds found within the geometrical structure of a C_N fullerene have been developed and verified using the simulation, therefore proving the validation of both the simulation and analytical results. The simulation results show that the total number of carbon atoms within fullerene is equal to the value of N and the total number of hexagons, pentagons, and bonds within the structure of a fullerene increases with the increase in the value of N. Further, the electronic properties of these fullerenes have been identified with the help of their energy level diagrams obtained using the simulation. It has been observed that the C₂₀ and C₈₀ fullerenes are metallic because of their zero band gaps while the C₆₀ fullerene is an insulator with a very wide band gap of 5 eV whereas the C₁₈₀ and C₂₄₀ fullerenes are semiconducting with band gaps of 1.43 eV and 1.05 eV, respectively. Finally, it has been observed from these studies that the metallic fullerenes are best suited for interconnects and the semiconducting fullerenes are bested suited as a channel material for designing high-performance nanoelectronic devices.

n-Type organic semiconductors in organic electronics

Organic semiconductors have been the subject of intensive academic and commercial interest over the past two decades, and successful commercial devices incorporating them are slowly beginning to enter the market. Much of the focus has been on the development of hole transporting, or p-type, semiconductors that have seen a dramatic rise in performance over the last decade. Much less attention has been devoted to electron transporting, or so called n-type, materials, and in this paper we focus upon recent developments in several classes of n-type materials and the design guidelines used to develop them.

C80 Encaging Four Different Atoms: The Synthesis, Isolation, and Characterizations of ScYErN@C80

The synthesis, isolation, and spectroscopic characterizations of an endohedral fullerene with four heteroatoms encapsulated (ScYErN@C80) are reported for the first time. The isomeric structure and electronic properties of this molecule are studied by various spectrometry methods such as high-performance liquid chromatography (HPLC), laser desorption time-of-flight (LD-TOF) mass spectroscopy, cyclic voltammetry, Fourier transform infrared (FTIR) spectroscopy, and visible-near infrared (vis-NIR) absorption spectroscopy. The carbon cage of ScYErN@C80 is assigned as Ih-C80, and the four-membered ScYErN cluster is suggested to rotate rapidly inside the fullerene cage. Six electrons are transferred from the nuclear cluster ScYErN to the fullerene cage, which leads to a closed-shell electronic structure of the Ih-C80 and results in excellent stability of this molecule.

Electrochemical nanostructuring of fullerene films—spectroscopic evidence for C60 polymer formation and hydrogenation

Electrochemical reduction of ordered C60 fullerene films in aqueous solution was studied by AFM, FTIR and Raman spectroscopy, mass spectrometry and elastic recoil detection analysis. During the irreversible reduction process the film morphology changed from a heteroepitaxial (111) surface to a nanostructured array with clusters of 20 to 50 nm lateral size on average. On the molecular level the initial C60 underwent electrochemical reactions to form C60 polymers and hydrogenated C60. Chemical follow-up reactions of electrochemically formed C60- with water are responsible for the different reduction behaviour of C60 films in aqueous solution compared to C60 reduction in organic solvents and to C60 doping with alkali metals. Based on the spectroscopic analysis a reaction scheme accounting for the chemical processes at the C60 / aqueous electrolyte interface is presented.