Vertically aligned ZnO nanowires produced by a catalyst-free thermal evaporation method and their field emission properties

Nanowire Electronics: From Nanoscale to Macroscale

Semiconductor nanowires have attracted extensive interest as one of the best-defined classes of nanoscale building blocks for the bottom-up assembly of functional electronic and optoelectronic devices over the past two decades. The article provides a comprehensive review of the continuing efforts in exploring semiconductor nanowires for the assembly of functional nanoscale electronics and macroelectronics. Specifically, we start with a brief overview of the synthetic control of various semiconductor nanowires and nanowire heterostructures with precisely controlled physical dimension, chemical composition, heterostructure interface, and electronic properties to define the material foundation for nanowire electronics. We then summarize a series of assembly strategies developed for creating well-ordered nanowire arrays with controlled spatial position, orientation, and density, which are essential for constructing increasingly complex electronic devices and circuits from synthetic semiconductor nanowires. Next, we review the fundamental electronic properties and various single nanowire transistor concepts. Combining the designable electronic properties and controllable assembly approaches, we then discuss a series of nanoscale devices and integrated circuits assembled from nanowire building blocks, as well as a unique design of solution-processable nanowire thin-film transistors for high-performance large-area flexible electronics. Last, we conclude with a brief perspective on the standing challenges and future opportunities.

Catalyst-Free, Selective Growth of ZnO Nanowires on SiO2 by Chemical Vapor Deposition for Transfer-Free Fabrication of UV Photodetectors

Catalyst-free, selective growth of ZnO nanowires directly on the commonly used dielectric SiO2 layer is of both scientific significance and application importance, yet it is still a challenge. Here, we report a facile method to grow single-crystal ZnO nanowires on a large scale directly on SiO2/Si substrate through vapor-solid mechanism without using any predeposited metal catalyst or seed layer. We found that a rough SiO2/Si substrate surface created by the reactive ion etching is critical for ZnO growth without using catalyst. ZnO nanowire array exclusively grows in area etched by the reactive ion etching method. The advantages of this method include facile and safe roughness-assisted catalyst-free growth of ZnO nanowires on SiO2/Si substrate and the subsequent transfer-free fabrication of electronic or optoelectronic devices. The ZnO nanowire UV photodetector fabricated by a transfer-free process presented high performance in responsivity, quantum efficiency and response speed, even without any post-treatments. The strategy shown here would greatly reduce the complexity in nanodevice fabrication and give an impetus to the application of ZnO nanowires in nanoelectronics and optoelectronics.

Fabrication and characterization of hexagonally patterned quasi-1D ZnO nanowire arrays

Quasi-one-dimensional (quasi-1D) ZnO nanowire arrays with hexagonal pattern have been successfully synthesized via the vapor transport process without any metal catalyst. By utilizing polystyrene microsphere self-assembled monolayer, sol-gel-derived ZnO thin films were used as the periodic nucleation sites for the growth of ZnO nanowires. High-quality quasi-1D ZnO nanowires were grown from nucleation sites, and the original hexagonal periodicity is well-preserved. According to the experimental results, the vapor transport solid condensation mechanism was proposed, in which the sol-gel-derived ZnO film acting as a seed layer for nucleation. This simple method provides a favorable way to form quasi-1D ZnO nanostructures applicable to diverse fields such as two-dimensional photonic crystal, nanolaser, sensor arrays, and other optoelectronic devices.

Enhanced photocatalytic activity of metal coated ZnO nanowires

A simple, facile and template free route has been described for the synthesis of ZnO nanowires. The morphology and structure of ZnO nanowires have been tuned by deposing silver and gold onto the surface of ZnO nanowire and this has been done by adding AgNO(3) and HAuCl(4) to aqueous suspension of ZnO. Our synthesized Ag and Au coated ZnO nanoparticles show different emissive property than the native ZnO nanowires. The photocatalytic degradation of Methylene Blue is also evaluated using ZnO and Ag and Au coated ZnO nanowires. It has been observed that Ag coated ZnO nano-needles exhibits significantly enhanced photocatalytic efficiency compare to ZnO nanowire and Au coated ZnO nano-leaves. Fluorescence spectra and surface structure of the samples with their photocatalytic activity indicates that surface deposited metal serves as an electron sinks to enhance the separation of photoinduced electrons from holes, leading to the formation of OH and it enhances their photocatalytic efficiency.

Synthesis and characterization of ZnO nanowires by thermal oxidation of Zn thin films at various temperatures

In this research high-quality zinc oxide (ZnO) nanowires have been synthesized by thermal oxidation of metallic Zn thin films. Metallic Zn films with thicknesses of 250 nm have been deposited on a glass substrate by the PVD technique. The deposited zinc thin films were oxidized in air at various temperatures ranging between 450 °C to 650 °C. Surface morphology, structural and optical properties of the ZnO nanowires were examined by scanning electron microscope (SEM), X-ray diffraction (XRD), energy dispersive X-ray (EDX) and photoluminescence (PL) measurements. XRD analysis demonstrated that the ZnO nanowires has a wurtzite structure with orientation of (002), and the nanowires prepared at 600 °C has a better crystalline quality than samples prepared at other temperatures. SEM results indicate that by increasing the oxidation temperature, the dimensions of the ZnO nanowires increase. The optimum temperature for synthesizing high density, ZnO nanowires was determined to be 600 °C. EDX results revealed that only Zn and O are present in the samples, indicating a pure ZnO composition. The PL spectra of as-synthesized nanowires exhibited a strong UV emission and a relatively weak green emission.

Hydrothermally Grown ZnO Micro/Nanotube Arrays and Their Properties

We reported the optical and wettability properties of aligned zinc oxide micro/nanotube arrays, which were synthesized on zinc foil via a simple hydrothermal method. As-synthesized ZnO micro/nanotubes have uniform growth directions along the [0001] orientations with diameters in the range of 100-700 nm. These micro/nanotubes showed a strong emission peak at 387 nm and two weak emission peaks at 422 and 485 nm, respectively, and have the hydrophobic properties with a contact angle of 121°. Single ZnO micro/nanotube-based field-effect transistor was also fabricated, which shows typical n-type semiconducting behavior.

Screening in nanowires and nanocontacts: field emission, adhesion force, and contact resistance

The explanations of several nanoscale phenomena such as the field enhancement factor in field emission, the large decay length of the adhesion force between a metallic tip and a surface, and the contact resistance in a nanowire break junction have been elusive. Here we develop an analytical theory of Thomas-Fermi screening in nanoscale structures. We demonstrate that nanoscale dimensions give rise to an effective screening length that depends on the geometry and physical boundary conditions. The above phenomena are shown to be manifestations of the effective screening length.

Synthesis and field electron emission properties of hybrid carbon nanotubes and nanoparticles

Hybrid ZnO-carbon nanotubes as well as nanodiamond-carbon nanotubes were synthesized via a straightforward process of plasma enhanced chemical vapor deposition. For the former, ZnO nanoparticles were instantly coated on the tube surface in the final growing process of carbon nanotubes, while for the latter diamond nanoparticles were grown using pretreatment of a silicon substrate with Ni(NO(3))(2)·6H(2)O/Mg(NO(3))(2)·6H(2)O alcohol solution prior to deposition and a high H(2)/CH(4) gas flow ratio in the deposition process. The morphology and microstructure of the obtained hybrid materials were characterized by transmission electron microscopy. Both hybrid ZnO-carbon nanotubes and nanodiamond-carbon nanotubes exhibited excellent field emission properties.

Efficient field emission from vertically grown planar ZnO nanowalls on an ITO-glass substrate

Vertically grown planar ZnO nanowalls, with typical dimensions of 40-80 nm thickness and several micrometers wide, were electrodeposited on an indium-tin-oxide (ITO)-glass substrate at 70 °C. X-ray photoelectron spectroscopy (XPS) studies reveal that the nanowalls consist of ZnO covered with a Zn(OH)(2) overlayer. An x-ray diffraction (XRD) study shows that these nanowalls have the wurtzite structure and are highly crystalline. The corresponding Raman and photoluminescence spectra further indicate the presence of oxygen deficiency. These ZnO nanowalls exhibit excellent field emission performance, with not only a considerably lower turn-on field of 3.6 V µm(-1) (at 0.1 µA cm(-2)) but also a higher current density of 0.34 mA cm(-2) at 6.6 V µm(-1) than most ZnO nanowires and other one-dimensional nanostructures reported to date.

Surfactant-Assisted Route to Synthesize Well-Aligned ZnO Nanorod Arrays on Sol−Gel-Derived ZnO Thin Films

Anisotropic growth of ZnO nanorod arrays on ZnO thin films was achieved at a temperature of 90 degrees C by a surfactant-assisted soft chemical approach with control over size and orientation. ZnO thin films with c-axis preferred orientation had been achieved by the sol-gel technique. Lengths, diameters, and the degree of alignment of the ZnO nanorods were controlled by changing the experimental parameters. It was observed that the surfactant was essential to restrict the lateral growth of the nanorods, whereas the pH level of the reaction medium controlled the length of the nanorods. On the other hand, the orientation of the nanorods depended on the crystalline orientation of the film as well as the pH of the reaction medium. Room-temperature photoluminescence studies revealed that the ZnO nanorods with the best alignment exhibited the best emission property. The ZnO nanorods exhibited a strong UV emission peak at approximately 3.22 eV, ascribed to the band-edge emission. The field emission studies of the well-aligned nanorod arrays exhibited a low turn-on field of 1.7 V/microm to get an emission current density of 0.1 microA/cm(2).

Mg-Catalyzed Autoclave Synthesis of Aligned Silicon Carbide Nanostructures

In this article, a novel magnesium-catalyzed co-reduction route was developed for the large-scale synthesis of aligned beta-SiC one-dimensional (1D) nanostructures at relative lower temperature (600 degrees C). By carefully controlling the reagent concentrations, we could synthesize beta-SiC rodlike and needlelike nanostructures. The possible growth mechanism of the as-synthesized beta-SiC 1D nanostructures has been investigated. The structure and morphology of the as-synthesized beta-SiC nanostructures are characterized using X-ray diffraction, Fourier transform infrared absorption, and scanning and transmission electron microscopes. Raman and photoluminescence properties are also investigated at room temperature. The as-synthesized beta-SiC nanostructures exhibit strong shape-dependent field emission properties. Corresponding to their shapes, the as-synthesized nanorods and nanoneedles display the turn-on fields of 12, 8.4, and 1.8 V/microm, respectively.

Synthesis and electrical properties of ZnO nanowires

Vertically aligned ZnO nanowires were synthesized on the p(+) silicon chip by modifying the CVD process with a vapor trapping design. Scanning electron microscopy was used to investigate the morphology of as-obtained nanowires. X-ray diffraction showed that the obtained nanowires were ZnO crystalline. The rectifying characteristics of the p-n heterojunction composed of ZnO nanowires and a p(+) silicon chip were observed. The positive turn-on voltage was 0.5V and the reverse saturation current was 0.01mA. These vertically aligned ZnO nanowires showed a low field emission threshold of 4V/microm at a current density of 0.1microA/cm(2). The dependence of emission current density on the electric field followed Fowler-Nordheim relationship.

Growth of Self-Organized Hierarchical ZnO Nanoarchitectures by a Simple In/In2S3 Controlled Thermal Evaporation Process

Novel hierarchical ZnO nanoarchitectures, such as microtrepangs, microbelts, nanoflowers, nanocombs, nanowheels, and nanofans assembled by ZnO nanocones, nanobowling pins, nanobottles, nanoarrows, and nanonails, have had their growth controlled by the thermal evaporation of Zn and a mixture of In and In2S3. Both the morphologies of the products and their construction units could be efficiently controlled by simple adjustment of the weight ratio of In/In2S3. The phase structure, morphologies, and photoluminescence properties of the ZnO products were investigated by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectroscopy. These novel hierarchical ZnO nanoarchitectures may be attractive building blocks for creating optical or other nanodevices.