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Zhu Z, Jönsson A, Liu YP, Svensson J, Timm R, Wernersson LE. Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si. ACS APPLIED ELECTRONIC MATERIALS 2022; 4:531-538. [PMID: 35098137 PMCID: PMC8793030 DOI: 10.1021/acsaelm.1c01134] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2021] [Accepted: 12/30/2021] [Indexed: 05/17/2023]
Abstract
Sb-based semiconductors are critical p-channel materials for III-V complementary metal oxide semiconductor (CMOS) technology, while the performance of Sb-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is typically inhibited by the low quality of the channel to gate dielectric interface, which leads to poor gate modulation. In this study, we achieve improved electrostatics of vertical GaSb nanowire p-channel MOSFETs by employing robust digital etch (DE) schemes, prior to high-κ deposition. Two different processes, based on buffer-oxide etcher (BOE) 30:1 and HCl:IPA 1:10, are compared. We demonstrate that water-based BOE 30:1, which is a common etchant in Si-based CMOS process, gives an equally controllable etching for GaSb nanowires compared to alcohol-based HCl:IPA, thereby realizing III-V on Si with the same etchant selection. Both DE chemicals show good interface quality of GaSb with a substantial reduction in Sb oxides for both etchants while the HCl:IPA resulted in a stronger reduction in the Ga oxides, as determined by X-ray photoelectron spectroscopy and in agreement with the electrical characterization. By implementing these DE schemes into vertical GaSb nanowire MOSFETs, a subthreshold swing of 107 mV/dec is obtained in the HCl:IPA pretreated sample, which is state of the art compared to reported Sb-based MOSFETs, suggesting a potential of Sb-based p-type devices for all-III-V CMOS technologies.
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Affiliation(s)
- Zhongyunshen Zhu
- Division
of Electromagnetics and Nanoelectronics, Department of Electrical
and Information Technology, Lund University, P.O. Box 117, 221 00 Lund, Sweden
| | - Adam Jönsson
- Division
of Electromagnetics and Nanoelectronics, Department of Electrical
and Information Technology, Lund University, P.O. Box 117, 221 00 Lund, Sweden
| | - Yen-Po Liu
- Division
of Synchrotron Radiation Research, Department of Physics, and NanoLund, Lund University, P.O.
Box 117, 221 00 Lund, Sweden
| | - Johannes Svensson
- Division
of Electromagnetics and Nanoelectronics, Department of Electrical
and Information Technology, Lund University, P.O. Box 117, 221 00 Lund, Sweden
| | - Rainer Timm
- Division
of Synchrotron Radiation Research, Department of Physics, and NanoLund, Lund University, P.O.
Box 117, 221 00 Lund, Sweden
| | - Lars-Erik Wernersson
- Division
of Electromagnetics and Nanoelectronics, Department of Electrical
and Information Technology, Lund University, P.O. Box 117, 221 00 Lund, Sweden
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Fang X, Wei Z, Fang D, Chu X, Tang J, Wang D, Wang X, Li J, Li Y, Yao B, Wang X, Chen R. Surface State Passivation and Optical Properties Investigation of GaSb via Nitrogen Plasma Treatment. ACS OMEGA 2018; 3:4412-4417. [PMID: 31458667 PMCID: PMC6641701 DOI: 10.1021/acsomega.7b01783] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/13/2017] [Accepted: 03/19/2018] [Indexed: 06/10/2023]
Abstract
GaSb is one of the most suitable semiconductors for optoelectronic devices operating in the mid-infrared range. However, the existence of GaSb surface states has dramatically limited the performance of these devices. Herein, a controllable nitrogen passivation approach is proposed for GaSb. The surface states and optical properties of GaSb were found to depend on the N passivation conditions. Varying the plasma power during passivation modified the chemical bonds of the GaSb surface, which influenced the emission efficiency. X-ray photoelectron spectroscopy was used to quantitatively demonstrate that the GaSb oxide layer was removed via treatment at a plasma power of 100 W. After nitrogen passivation, the samples exhibited enhanced emission. Free exciton emission was the main factor leading to this enhanced luminescence. An energy band model for the surface states is used to explain the carrier radiative recombination processes. This nitrogen passivation approach can suppress surface states and improve the surface quality of GaSb-based materials and devices. The enhancement in exciton-related emission by this simple approach is important for improving the performance of GaSb-based optoelectronic devices.
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Affiliation(s)
- Xuan Fang
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Zhipeng Wei
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Dan Fang
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Xueying Chu
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Jilong Tang
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Dengkui Wang
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Xinwei Wang
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Jinhua Li
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Yongfeng Li
- Key
Laboratory of Physics and Technology for Advanced Batteries, Ministry
of Education, College of Physics, Jilin
University, Changchun 130012, P. R. China
| | - Bin Yao
- Key
Laboratory of Physics and Technology for Advanced Batteries, Ministry
of Education, College of Physics, Jilin
University, Changchun 130012, P. R. China
| | - Xiaohua Wang
- State
Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Rui Chen
- Department
of Electrical and Electronic Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055, P. R. China
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Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors. CRYSTALS 2017. [DOI: 10.3390/cryst7110337] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/28/2023]
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Gao X, Wei Z, Zhao F, Yang Y, Chen R, Fang X, Tang J, Fang D, Wang D, Li R, Ge X, Ma X, Wang X. Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy. Sci Rep 2016; 6:29112. [PMID: 27381641 PMCID: PMC4933967 DOI: 10.1038/srep29112] [Citation(s) in RCA: 36] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/26/2016] [Accepted: 06/15/2016] [Indexed: 01/29/2023] Open
Abstract
We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component. The existence of localized states is also confirmed by the temperature dependence of peak position and band width of the emission. At temperature higher than 60 K, emissions related to localized states are quenched while the band to band transition dominates the whole spectrum. This study indicates that the localized states are related to the Sb component in the GaAsSb alloy, while it leads to the poor crystal quality of the material, and the application of GaAsSb alloy would be limited by this deterioration.
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Affiliation(s)
- Xian Gao
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Fenghuan Zhao
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology of China, Shenzhen, Guangdong 518055, China
| | - Yahui Yang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology of China, Shenzhen, Guangdong 518055, China
| | - Rui Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology of China, Shenzhen, Guangdong 518055, China
| | - Xuan Fang
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Jilong Tang
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Dan Fang
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Dengkui Wang
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Ruixue Li
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Xiaotian Ge
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Xiaohui Ma
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
| | - Xiaohua Wang
- State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China
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Fang X, Wei Z, Yang Y, Chen R, Li Y, Tang J, Fang D, Jia H, Wang D, Fan J, Ma X, Yao B, Wang X. Ultraviolet Electroluminescence from ZnS@ZnO Core-Shell Nanowires/p-GaN Introduced by Exciton Localization. ACS APPLIED MATERIALS & INTERFACES 2016; 8:1661-1666. [PMID: 26710654 DOI: 10.1021/acsami.5b08961] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We investigate the electroluminescence (EL) from light emitting diodes (LEDs) of ZnO nanowires/p-GaN structure and ZnS@ZnO core-shell nanowires/p-GaN structure. With the increase of forward bias, the emission peak of ZnO nanowires/p-GaN structure heterojunction shows a blue-shift, while the ZnS@ZnO core-shell nanowires/p-GaN structure demonstrates a changing EL emission; the ultraviolet (UV) emission at 378 nm can be observed. This discrepancy is related to the localized states introduced by ZnS particles, which results in a different carrier recombination process near the interfaces of the heterojunction. The localized states capture the carriers in ZnO nanowires and convert them to localized excitons under high forward bias. A strong UV emission due to localized excitons can be observed. Our results indicated that utilizing localized excitons should be a new route toward ZnO-based ultraviolet LEDs with high efficiency.
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Affiliation(s)
- Xuan Fang
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology , 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology , 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Yahui Yang
- Department of Electrical and Electronic Engineering, South University of Science and Technology of China , Shenzhen, Guangdong 518055, P. R. China
| | - Rui Chen
- Department of Electrical and Electronic Engineering, South University of Science and Technology of China , Shenzhen, Guangdong 518055, P. R. China
| | - Yongfeng Li
- Key Laboratory of Physics and Technology for Advanced Batteries, Ministry of Education, College of Physics, JilinUniversity , Changchun 130012, P. R. China
| | - Jilong Tang
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology , 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Dan Fang
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology , 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Huimin Jia
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology , 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Dengkui Wang
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology , 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Jie Fan
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology , 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Xiaohui Ma
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology , 7089 Wei-Xing Road, Changchun 130022, P. R. China
| | - Bin Yao
- Key Laboratory of Physics and Technology for Advanced Batteries, Ministry of Education, College of Physics, JilinUniversity , Changchun 130012, P. R. China
| | - Xiaohua Wang
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology , 7089 Wei-Xing Road, Changchun 130022, P. R. China
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Li Z, Yuan X, Fu L, Peng K, Wang F, Fu X, Caroff P, White TP, Hoe Tan H, Jagadish C. Room temperature GaAsSb single nanowire infrared photodetectors. NANOTECHNOLOGY 2015; 26:445202. [PMID: 26451616 DOI: 10.1088/0957-4484/26/44/445202] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Antimonide-based ternary III-V nanowires (NWs) allow for a tunable bandgap over a wide range, which is highly interesting for optoelectronics applications, and in particular for infrared photodetection. Here we demonstrate room temperature operation of GaAs0.56Sb0.44 NW infrared photodetectors grown by metal organic vapor phase epitaxy. These GaAs0.56Sb0.44 NWs have uniform axial composition and show p-type conductivity with a peak field-effect mobility of ∼12 cm(2) V(-1) s(-1)). Under light illumination, single GaAs0.56Sb0.44 NW photodetectors exhibited typical photoconductor behavior with an increased photocurrent observed with the increase of temperature owing to thermal activation of carrier trap states. A broadband infrared photoresponse with a long wavelength cutoff at ∼1.66 μm was obtained at room temperature. At a low operating bias voltage of 0.15 V a responsivity of 2.37 (1.44) A/W with corresponding detectivity of 1.08 × 10(9) (6.55 × 10(8)) cm√Hz/W were achieved at the wavelength of 1.3 (1.55) μm, indicating that ternary GaAs0.56Sb0.44 NWs are promising photodetector candidates for small footprint integrated optical telecommunication systems.
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Affiliation(s)
- Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia
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7
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Fang X, Wei Z, Chen R, Tang J, Zhao H, Zhang L, Zhao D, Fang D, Li J, Fang F, Chu X, Wang X. Influence of Exciton Localization on the Emission and Ultraviolet Photoresponse of ZnO/ZnS Core-Shell Nanowires. ACS APPLIED MATERIALS & INTERFACES 2015; 7:10331-10336. [PMID: 25918945 DOI: 10.1021/acsami.5b01100] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
The structural and optical properties of ZnO and ZnO/ZnS core-shell nanowires grown by a wet chemical method are investigated. The near-bandgap ultraviolet (UV) emission of the ZnO nanowires was enhanced by four times after coating with ZnS. The enhanced emission was attributed to surface passivation of the ZnO nanowires and localized states introduced during ZnS growth. The emission of the ZnO and ZnO/ZnS core-shell nanowires was attributed to neutral donor-bound excitons and localized excitons, respectively. Localized states prevented excitons from diffusing to nonradiative recombination centers, so therefore contributed to the enhanced emission. Emission from the localized exciton was not sensitive to temperature, so emission from the ZnO/ZnS core-shell nanowires was more stable at higher temperature. UV photodetectors based on the ZnO and ZnO/ZnS core-shell nanowires were fabricated. Under UV excitation, the device based on the ZnO/ZnS core-shell nanowires exhibited a photocurrent approximately 40 times higher than that of the device based on the ZnO nanowires. The differing photoresponse of the detectors was consistent with the existence of surface passivation and localized states. This study provides a means for modifying the optical properties of ZnO materials, and demonstrates the potential of ZnO/ZnS core-shell nanowires in UV excitonic emission and detection.
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Affiliation(s)
- Xuan Fang
- †State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China
| | - Zhipeng Wei
- †State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China
| | - Rui Chen
- ‡Department of Electrical and Electronic Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055, People's Republic of China
| | - Jilong Tang
- †State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China
| | - Haifeng Zhao
- §Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, People's Republic of China
| | - Ligong Zhang
- §Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, People's Republic of China
| | - Dongxu Zhao
- §Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, People's Republic of China
| | - Dan Fang
- †State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China
| | - Jinhua Li
- †State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China
| | - Fang Fang
- †State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China
| | - Xueying Chu
- †State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China
| | - Xiaohua Wang
- †State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, People's Republic of China
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