Controlling electron transfer from photoexcited quantum dots to Al doped ZnO nanoparticles with varied dopant concentration

Color Revolution: Prospects and Challenges of Quantum-Dot Light-Emitting Diode Display Technologies

Light-emitting diodes (LEDs) based on colloidal quantum-dots (QDs) such as CdSe, InP, and ZnSeTe feature a unique advantage of narrow emission linewidth of ≈20 nm, which can produce highly accurate colors, making them a highly promising technology for the realization of displays with Rec. 2020 color gamut. With the rapid development in the past decades, the performances of red and green QLEDs have been remarkably improved, and their efficiency and lifetime can almost meet industrial requirements. However, the industrialization of QLED displays still faces many challenges; for example, (1) the device mechanisms including the charge injection/transport/leakage, exciton quenching, and device degradation are still unclear, which fundamentally limit QLED performance improvement; (2) the blue performances including the efficiency, chromaticity, and stability are relatively low, which are still far from the requirements of practical applications; (3) the color patterning processes including the ink-jet printing, transfer printing, and photolithography are still immature, which restrict the manufacturing of high resolution full-color QLED displays. Here, the recent advancements attempting to address the above challenges of QLED displays are specifically reviewed. After a brief overview of QLED development history, device structure/principle, and performances, the main focus is to investigate the recent discoveries on device mechanisms with an emphasis on device degradation. Then recent progress is introduced in blue QLEDs and color patterning. Finally, the opportunities, challenges, solutions, and future research directions of QLED displays are summarized.

Single-composition Al3+-singly doped ZnO phosphors for UV-pumped warm white light-emitting diode applications

The development of full-visible-spectrum phosphors is essential for next-generation light-emitting devices with better light quality. Herein, we report on a novel broad-band-emitting phosphor based on single-composition Al-doped ZnO phosphors. Under the UV excitation of 325 nm, the ZnO : Al phosphor exhibits a full spectrum emission in the visible wavelength range from 400 to 800 nm with a CIE chromaticity coordinate of (0.42, 0.48), a quantum efficiency of 43%, a color rendering index (CRI) of 74, a correlated color temperature (CCT) value of 3873 K and an activation energy of 0.22 eV. A prototype of a UV-pumped warm WLED with a high CRI of 87 and a CCT of 4067 K has been achieved by using only this broad-band-emitting Al3+-doped ZnO phosphor. The obtained results indicate that the single-composition Al3+-singly doped warm white emitting phosphor is a promising candidate for UV-pump warm white light-emitting diodes.