Tuning the electronic property of two dimensional SiSe monolayer by in-plane strain

Ultrahigh Carrier Mobility in Two-Dimensional IV-VI Semiconductors for Photocatalytic Water Splitting

Two-dimensional materials have been developed as novel photovoltaic and photocatalytic devices because of their excellent properties. In this work, four δ-IV-VI monolayers, GeS, GeSe, SiS and SiSe, are investigated as semiconductors with desirable bandgaps using the first-principles method. These δ-IV-VI monolayers exhibit exceptional toughness; in particular, the yield strength of the GeSe monolayer has no obvious deterioration at 30% strain. Interestingly, the GeSe monolayer also possesses ultrahigh electron mobility along the x direction of approximately 32,507 cm²·V^-1·s^-1, which is much higher than that of the other δ-IV-VI monolayers. Moreover, the calculated capacity for hydrogen evolution reaction of these δ-IV-VI monolayers further implies their potential for applications in photovoltaic and nano-devices.

Prediction of 2D IV-VI semiconductors: auxetic materials with direct bandgap and strong optical absorption

Auxetic materials are highly desirable for advanced applications because of their negative Poisson's ratios, which are rather scarce in two-dimensional materials. Motivated by the elemental mutation method, we predict a new class of monolayer IV-VI semiconductors, namely, δ-IV-VI monolayers (GeS, GeSe, SiS and SiSe). Distinctly different from the previously predicted IV-VI monolayers, the newly predicted δ-MX (X = Ge and Si; M = S and Se) monolayers exhibit a puckered unit cell with a space group of Pca2₁. Their stabilities were confirmed by first-principles lattice dynamics and molecular dynamics calculations. In particular, all these MX monolayers possess a large bandgap in the range of 2.08-2.65 eV and pronounced anisotropic mechanical properties, which are demonstrated by direction-dependent in-plane Young's moduli and Poisson's ratios. Furthermore, all these 2D MX monolayers possess negative Poisson's ratios (even up to about -0.3 for SiSe). Strong optical absorption is observed in these δ-IV-VI monolayers. These interesting physical properties will stimulate the development of 2D flexible devices based on IV-VI semiconductor monolayers.

2D Silicon-Based Semiconductor Si2 Te3 toward Broadband Photodetection

Silicon-based semiconductor materials dominate modern technology for more than half a century with extraordinary electrical-optical performance and mutual processing compatibility. Now, 2D materials have rapidly established themselves as prospective candidates for the next-generation semiconductor industry because of their novel properties. Considering chemical and processing compatibility, silicon-based 2D materials possess significant advantages in integrating with silicon. Here, a systematic study is reported on the structural, electrical, and optical performance of silicon telluride (Si₂ Te₃ ) 2D material, a IV-VI silicon-based semiconductor with a layered structure. The ultrawide photoluminescence (PL) spectra in the range of 550-1050 nm reveals the intrinsic defects in Si₂ Te₃ . The Si₂ Te₃ -based field-effect transistors (FETs) and photodetectors show a typical p-type behavior and a remarkable broadband spectral response in the range of 405-1064 nm. Notably, the photoresponsivity and detectivity of the photodetector device with 13.5 nm in thickness and upon 405 nm illumination can reach up to 65 A W^-1 and 2.81 × 10¹² Jones, respectively, outperforming many traditional broadband photodetectors. It is believed this work will excite interests in further exploring the practical application of 2D silicon-based materials in the field of optoelectronics.

Digital speckle shearography setup to measure the field-induced strain map in piezoelectric materials

Residual or induced strains are important factors in the performance of electronic devices, actuators, and sensors. In this paper, we report the application of digital speckle shearography to obtain the two-dimensional field-induced out-of-plane strain maps in a piezoelectric slab under a varying electric field. Both the free-standing and loaded (pinned) states are investigated. The results show field-dependent strain maps with parabolic profiles on the order of 10^-4 and 10^-3 in the free-standing and pinned states, respectively, in agreement with typical values for piezoelectric ceramics. This study provides a simple, non-destructive, and full-field method to characterize these materials.

Highly Selective Adsorption on SiSe Monolayer and Effect of Strain Engineering: A DFT Study

The adsorption types of ten kinds of gas molecules (O2, NH3, SO2, CH4, NO, H2S, H2, CO, CO2, and NO2) on the surface of SiSe monolayer are analyzed by the density-functional theory (DFT) calculation based on adsorption energy, charge density difference (CDD), electron localization function (ELF), and band structure. It shows high selective adsorption on SiSe monolayer that some gas molecules like SO2, NO, and NO2 are chemically adsorbed, while the NH3 molecule is physically adsorbed, the rest of the molecules are weakly adsorbed. Moreover, stress is applied to the SiSe monolayer to improve the adsorption strength of NH3. It has a tendency of increment with the increase of compressive stress. The strongest physical adsorption energy (-0.426 eV) is obtained when 2% compressive stress is added to the substrate in zigzag direction. The simple desorption is realized by decreasing the stress. Furthermore, based on the similar adsorption energy between SO2 and NH3 molecules, the co-adsorption of these two gases are studied. The results show that SO2 will promote the detection of NH3 in the case of SO2-NH3/SiSe configuration. Therefore, SiSe monolayer is a good candidate for NH3 sensing with strain engineering.