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Yang D, Lin Y, Meng W, Wang Z, Li H, Li C, Zhang Z, Zhang Q, You J, Wang J, Yu T, Li Y, Miao W, Zhen W, Xue F, Fei R, Sun L. Relaxor Antiferroelectric Dynamics for Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025:e2419204. [PMID: 40270349 DOI: 10.1002/adma.202419204] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2024] [Revised: 04/14/2025] [Indexed: 04/25/2025]
Abstract
Relaxor antiferroelectric (AFE) materials display a gradual polarization response and high energy storage density with polarization slowly reverting after removing an external field. This distinctive polarization-switching behavior closely resembles synaptic plasticity in biological nervous systems, presenting substantial potential for neuromorphic computing applications. Especially, its 2D scenario exhibits unique physical properties and maintains stability at atomic thickness due to their antipolar alignment, which effectively eliminates the depolarization field effect. Such stable 2D relaxor AFE materials offer significant advantages for integrating these materials into modern electronic devices for neuromorphic computing. In this study, the potential of a novel quaternary layered AFE material, CuBiP₂Se₆ (CBPS), is explored for neuromorphic device applications. CBPS exhibits a broad range of light absorption and stable relaxor AFE behavior, rendering it an outstanding candidate for optoelectronic synaptic devices. High-quality CBPS is synthesized and its AFE properties through various characterization techniques are verified. CBPS-based synaptic devices demonstrate dual-mode tunable resistance plasticity stimulated by both electrical and optical inputs, demonstrating the capacity to perform in-sensor computing for image restoration tasks. These findings suggest that relaxor AFE materials like CBPS could provide a robust platform for various brain-inspired applications, particularly in neuromorphic computing, and artificial visual systems.
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Affiliation(s)
- Dongliang Yang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Yinan Lin
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Weifan Meng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Zhongyi Wang
- Center for Quantum Matter, School of Physics, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Huihan Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Ce Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Zirui Zhang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Qianyu Zhang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Junqi You
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Jiarui Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Tianze Yu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Yutao Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Weiting Miao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Weili Zhen
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Fei Xue
- Center for Quantum Matter, School of Physics, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Ruixiang Fei
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Linfeng Sun
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
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Bai H, Yu Z, Feng J, Liu D, Li W, Pan H. Co 3X 8 (X = Cl and Br): multiple phases and magnetic properties of the Kagome lattice. NANOSCALE 2024; 16:1362-1370. [PMID: 38131608 DOI: 10.1039/d3nr04762h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
The unique magnetic properties of two-dimensional (2D) materials have demonstrated huge potential for applications in nanodevices and spintronics. In this work, we propose a new Kagome lattice, Co3X8 (X = Cl and Br), based on density functional theory (DFT) calculation. We find that Co/X in Co3X8 has spontaneous movement in the lattice, resulting in 156- and 12-phases of Co3X8 and diverse magnetic and electronic properties. We show that the magnetic and electronic properties of Co3X8 can be engineered by strain, and the magnetic properties of Co3X8 are highly related to the spontaneous movement of X. Moreover, the transmission property of 12-Co3X8 shows clear angle-dependent features due to the symmetry breaking as caused by the spontaneous movement of X. Our findings may provide not only a possible Kagome lattice with unique properties, but also a strategy for designing nanodevices and for spintronics.
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Affiliation(s)
- Haoyun Bai
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, 999078, P.R. China.
| | - Zhichao Yu
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, 999078, P.R. China.
| | - Jinxian Feng
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, 999078, P.R. China.
| | - Di Liu
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, 999078, P.R. China.
| | - Weiqi Li
- School of Physics, Harbin Institute of Technology, Harbin 150001, P.R. China
| | - Hui Pan
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, 999078, P.R. China.
- Department of Physics and Chemistry, Faculty of Science and Technology, University of Macau, Macao SAR, 999078, P. R. China
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