The interface modified by CsPbBr3 quantum dots for hole transport layer-free perovskite solar cell

Ruddlesden-Popper Perovskite Nanocrystals as Interface Modification Layer for Efficient Perovskite Solar Cells

Perovskite nanocrystals are advantageous for interfacial passivation of perovskite solar cells (PSCs), but the insulating long alkyl chain surface ligands impede the charge transfer, while the conventional ligand exchange would possibly introduce surface defects to the nanocrystals. In this work, we reported novel in situ modification of CsPbBr3 nanocrystals using a short chain conjugated molecule 2-methoxyphenylethylammonium iodide (2-MeO-PEAI) for interfacial passivation of PSCs. Transmission electron microscopy studies with atomic resolution unveil the transformation from cubic CsPbBr3 to Ruddlesden-Popper phase (RPP) nanocrystals due to halogen exchange. Synergic passivation by the RPP nanocrystals and 2-MeO-PEA+ has led to suppressed interface defects and enhanced charge carrier transport. Consequently, PSCs with in situ modified RPP nanocrystals achieved a champion power conversion efficiency of 24.39%, along with an improvement in stability. This work brings insights into the microstructural evolution of perovskite nanocrystals, providing a novel and feasible approach for interfacial passivation of PSCs.

Enhancement and Broadening of the Internal Electric Field of Hole-Transport-Layer-Free Perovskite Solar Cells by Quantum Dot Interface Modification

Hole-transport-layer-free perovskite solar cells have attracted strong interest due to their simple structure and low cost, but charge recombination is serious. Built-in electric field engineering is an intrinsic driver to facilitate charge separation transport and improve the efficiency of photovoltaic devices. However, the enhancement of the built-in electric field strength is often accompanied by the narrowing of the space charge region, which becomes a key constraint to the performance improvement of the device. Here, we propose an effective regulation method, the component engineering of quantum dots, to enhance the strength of the built-in electric field and broaden the range of space charge. By using all inorganic CsPbBrxI3-x (x = 0, 1, 2, 3) quantum dot interface modification to passivate the defects of MAPbI3 perovskite films, the regulation law of quantum dot components on the work function of perovskite films was revealed, and the mechanism of their influence on the internal electric field intensity and space charge region distribution was further clarified, thereby fundamentally solving the serious problem of charge recombination. As directly observed by electron-beam-induced current (EBIC), the introduction of CsPbBr2I quantum dots can effectively enhance the interfacial electric field intensity, widening the space charge region from 160 to 430 nm. Moreover, the efficiency of the hole-free transport layer perovskite solar cells modified by CsPbBr2I quantum dots was also significantly enhanced by 1.5 times. This is an important guideline for electric field modulation and efficiency improvement within photovoltaic devices with other simplified structures.

Morphology-Dependent Charge Carrier Dynamics and Ion Migration Behavior of CsPbBr3 Halide Perovskite Quantum Dot Films

Exceptional electronic, optoelectronic, and sensing properties of inorganic Cs-based perovskites are significantly influenced by the defect chemistry of the material. Although organic halide perovskites that have a polycrystalline structure are heavily studied, understanding of the defect properties at the grain boundaries (GB) of inorganic Cs-based perovskite quantum dots (QDs) is still limited. Here, morphology-dependent charge carrier dynamics of CsPbBr₃ quantum dots at the nanoscale by performing scanning probe microscopy of thermally treated samples are investigated. The grain boundaries of defect-engineered samples show higher surface potential than the grain interiors under light illumination, suggesting an effective role of GBs as charge collection and transport channels. The lower density of crystallographic defects and lower trap density at GBs specifically of heat-treated samples cause insignificant dark current, lower local current hysteresis, and higher photocurrent, than the control samples. It is also shown that the decay rate of surface photovoltage of the heated sample is quicker than the control sample, which implies a considerable impact of ion migration on the relaxation dynamic of photogenerated charge carriers. These findings reveal that the annealing process is an effective strategy to control not only the morphology but also the optoelectrical properties of GB defects, and the dynamic of ion migration. Understanding the origin of photoelectric activity in this material allows for designing and engineering optoelectronic QD devices with enhanced functionality.