Semiconductor technology in protein kinase research and drug discovery: sensing a revolution

Gold Nanoparticle Enabled Localized Surface Plasmon Resonance on Unique Gold Nanomushroom Structures for On-Chip CRISPR-Cas13a Sensing

A novel localized surface plasmon resonance (LSPR) system based on the coupling of gold nanomushrooms (AuNMs) and gold nanoparticles (AuNPs) is developed to enable a significant plasmonic resonant shift. The AuNP size, surface chemistry, and concentration are characterized to maximize the LSPR effect. A 31 nm redshift is achieved when the AuNMs are saturated by the AuNPs. This giant redshift also increases the full width of the spectrum and is explained by the 3D finite-difference time-domain (FDTD) calculation. In addition, this LSPR substrate is packaged in a microfluidic cell and integrated with a CRISPR-Cas13a RNA detection assay for the detection of the SARS-CoV-2 RNA targets. Once activated by the target, the AuNPs are cleaved from linker probes and randomly deposited on the AuNM substrate, demonstrating a large redshift. The novel LSPR chip using AuNP as an indicator is simple, specific, isothermal, and label-free; and thus, provides a new opportunity to achieve the next generation multiplexing and sensitive molecular diagnostic system.

Onge PBJ, Rondeau-Gagné S, Mirhassani M. Computational Design of an Integrated CMOS Readout Circuit for Sensing With Organic Field-Effect Transistors

Organic field-effect transistors (OFETs) are at the forefront of next generation electronics. This class of devices is particularly promising due to the possibility of fabrication on mechanically compliant and conformable substrates, and potential manufacturing at large scale through solution deposition techniques. However, their integration in circuits, especially using stretchable materials, is still challenging. In this work, the design and implementation of a novel structure for an integrated CMOS readout circuitry is presented and its fundamentals of operation are provided. Critical for sensing applications, the readout circuitry described is highly linear. Moreover, as several sources of mismatch and error are present in CMOS and OFET devices, a calibration technique is used to cancel out all the mismatches, thus delivering a reliable output. The readout circuit is verified in TSMC 0.18 μm CMOS technology. The maximum total power consumption in the proposed readout circuit is less than 571 μW, while fully loaded calibration circuit consumes a power less than 153 μW, making it suitable for sensors applications. Based on previously reported high mobility and stretchable semiconducting polymers, this new design and readout circuitry is an important step toward a broader utilization of OFETs and the design of stretchable sensors.