Measurement of the half-value layer for CT systems in a single-rotation technique: Reduction of stray radiation with lead apertures

Half-value layer measurements using solid-state detectors and single-rotation technique with lead apertures in spiral computed tomography with and without a tin filter

Solid-state detectors (SSDs) may be used along with a lead collimator for half-value layer (HVL) measurement using computed tomography (CT) with or without a tin filter. We aimed to compare HVL measurements obtained using three SSDs (AGMS-DM+ , X2 R/F sensor, and Black Piranha) with those obtained using the single-rotation technique with lead apertures (SRTLA). HVL measurements were performed using spiral CT at tube voltages of 70-140 kV without a tin filter and 100-140 kV (Sn 100-140 kV) with a tin filter in increments of 10 kV. For SRTLA, a 0.6-cc ionization chamber was suspended at the isocenter to measure the free-in-air kerma rate (K ˙ air ) values. Five apertures were made on the gantry cover using lead sheets, and four aluminum plates were placed on these apertures. HVLs in SRTLA were obtained fromK ˙ air decline curves. Subsequently, SSDs inserted into the lead collimator were placed on the gantry cover and used to measure HVLs. Maximum HVL differences of AGMS-DM+ , X2 R/F sensor, and Black Piranha with respect to SRTLA without/with a tin filter were - 0.09/0.6 (only two Sn 100-110 kV) mm, - 0.50/ - 0.6 mm, and - 0.17/(no data available) mm, respectively. These values were within the specification limit. SSDs inserted into the lead collimator could be used to measure HVL using spiral CT without a tin filter. HVLs could be measured with a tin filter using only the X2 R/F sensor, and further improvement of its calibration accuracy with respect to other SSDs is warranted.

Accuracy of non-contact semiconductor X-ray analyzer for quality assurance in intraoral radiography: a comparison with ionization chamber dosimeter

OBJECTIVES

The aim of the present study was to evaluate the accuracy of a non-contact semiconductor X-ray analyzer for quality assurance in intraoral radiography, especially a comparison with an ionization chamber dosimeter.

METHODS

Intraoral radiography was performed with intraoral X-ray unit using the dental protocol at our hospital: tube voltage, 70 kV; tube current, 7 mA. Accuracy of dose and half-value layer (HVL) measurements was analyzed with a non-contact semiconductor X-ray analyzer and an ionization chamber dosimeter. Stability of the semiconductor sensor, effect of scattered radiation, and comparison of measured HVL between the ionization chamber and the semiconductor sensor were analyzed in this study.

RESULTS

The values with the semiconductor sensor were tube voltage: 70.3 ± 0.2 kVp (degree of variability: 0.28%), dose: 454.1 ± 12.3 μGy (degree of variability: 2.7%), and HVL: 1.91 ± 0.02 mmAl (degree of variability: 1.0%). With collimator, the dose with the semiconductor sensor and the ionization chamber decreased by 2.3 μ Gy and 5.2 μ Gy, respectively. The measured HVL of the semiconductor dosimeter was more than that of ionization chamber, and the semiconductor dosimeter was less than ionization chamber in variation of between without and with collimator.

CONCLUSION

This study indicated the accuracy of a non-contact semiconductor X-ray analyzer for quality assurance in intraoral radiography, especially a comparison with an ionization chamber dosimeter. The semiconductor sensor can be useful for quality assurance in intraoral radiography.

A pilot study of half-value layer measurements using a semiconductor dosimeter for intraoral radiography

Purpose

This pilot study was conducted to evaluate half-value layer (HVL) measurements obtained using a semiconductor dosimeter for intraoral radiography.

Materials and Methods

This study included 8 aluminum plates, 4 of which were low-purity (less than 99.9%) and 4 high-purity (greater than 99.9%). Intraoral radiography was performed using an intraoral X-ray unit in accordance with the dental protocol at the authors' affiliated hospital: tube voltage, 60 kVp and 70 kVp; tube current, 7 mA; and exposure time, 0.10 s. The accuracy of HVL measurements for intraoral radiography was assessed using a semiconductor dosimeter. A simple regression analysis was performed to compare the aluminum plate thickness and HVL in relation to the tube voltage (60 kVp and 70 kVp) and aluminum purity (low and high).

Results

For the low-purity aluminum plates, the HVL at 60 kVp (Y) and 70 kVp (Y) was significantly correlated with the thickness of the aluminum plate (X), with Y = 1.708 + 0.415X (r=0.999, P<0.05) and Y = 1.980 + 0.484X (r=0.999, P<0.05), respectively. Similarly, for the high-purity aluminum plates, the HVL at 60 kVp (Y) and 70 kVp (Y) was significantly correlated with the plate thickness (X), with Y = 1.696 + 0.454X (r=0.999, P<0.05) and Y = 1.968 + 0.515X (r=0.998, P<0.05), respectively.

Conclusion

This pilot study examined the relationship between aluminum plate thickness and HVL measurements using a semiconductor dosimeter for intraoral radiography. Semiconductor dosimeters may prove useful in HVL measurement for purposes such as quality assurance in dental X-ray imaging.