Habazaki H, Koyama S, Aoki Y, Sakaguchi N, Nagata S. Enhanced capacitance of composite anodic ZrO₂ films comprising high permittivity oxide nanocrystals and highly resistive amorphous oxide matrix.
ACS APPLIED MATERIALS & INTERFACES 2011;
3:2665-2670. [PMID:
21648468 DOI:
10.1021/am200460c]
[Citation(s) in RCA: 7] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
Anodic oxide films with nanocrystalline tetragonal ZrO(2) precipitated in an amorphous oxide matrix were formed on Zr-Si and Zr-Al alloys and had significantly enhanced capacitance in comparison with those formed on zirconium metal. The capacitance enhancement was associated with the formation of a high-temperature stable tetragonal ZrO(2) phase with high relative permittivity as well as increased ionic resistivity, which reduces the thickness of anodic oxide films at a certain formation voltage. However, there is a general empirical trend that single-phase materials with higher permittivity have lower ionic resistivity. This study presents a novel material design based on a nanocrystalline-amorphous composite anodic oxide film for capacitor applications.
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