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Li D, Gao K, Miao Z, Miao Y, Wang X, Wang D, Li Z, Han Y, Zheng Q, Li Z, Sun C. Localized nitride strategy to construct interfacial and electronic modulated WO 3/WN nanoparticles for superior lithium-ion storage. J Colloid Interface Sci 2025; 677:1034-1044. [PMID: 39178667 DOI: 10.1016/j.jcis.2024.08.138] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/04/2024] [Revised: 08/07/2024] [Accepted: 08/18/2024] [Indexed: 08/26/2024]
Abstract
The interfacial effect is important for the tungsten trioxide (WO3)-based anode to achieve superior lithium-ion storage performance. Herein, the interfacial effect was constructed by in-situ surface direct nitridation reaction at 600 ℃ for 30 min of the as-synthesis WO3 nanoparticles (WO3/WN). X-ray photoelectron spectroscopy (XPS) analysis confirms evident chemical interaction between WO3 and WN via the interfacial covalent bond (WON). This WO3/WN anode shows a distinct interfacial effect for an efficient interatomic electron migration. Electrochemical kinetic analysis shows enhanced pseudocapacitance contribution. The galvanostatic intermittent titration technique (GITT) result demonstrates improved charge transfer kinetics. Ex-situ X-ray diffraction (XRD) analysis reveals the reversible oxidation and reduction reaction of the WO3/WN anode. The density functional theory (DFT) result shows that the evident interfacial bonding effect can enhance the electrochemical reaction kinetics of the WO3/WN anode. The discharge capacity can reach up to 546.9 mA h g-1 at 0.1 A g-1 after 200 cycles. After 2000 cycles, the capacity retention is approximately 85.97 % at 1.0 A g-1. In addition, the WO3/WN full cell (LiFePO4/C//WO3/WN) demonstrates excellent rate capability and capacity retention ratio. This in-situ surface nitridation strategy is an effective solution for designing an oxide-based anode with good electrochemical performance and beyond.
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Affiliation(s)
- Dazhi Li
- College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, Shandong, PR China
| | - Kesheng Gao
- College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, Shandong, PR China
| | - Zeqing Miao
- College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, Shandong, PR China
| | - Yukun Miao
- College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, Shandong, PR China
| | - Xiaoguang Wang
- College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, Shandong, PR China
| | - Danchen Wang
- College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, Shandong, PR China
| | - Zeyang Li
- College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, Shandong, PR China
| | - Ying Han
- Yantai Guobang Chemical Machine Technology Co, Ltd, Yantai 264004, Shandong, PR China
| | - Qiuju Zheng
- School of Materials Science and Engineering, Qilu University of Technology, Jinan 250353, Shandong, PR China
| | - Zhenjiang Li
- College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, Shandong, PR China.
| | - Changlong Sun
- College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, Shandong, PR China.
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Wu Z, Liu G, Li B, Huang J, Sun J. Broadband and ascendant nonlinear optical properties of the wide bandgap material GaN nanowires. OPTICS EXPRESS 2024; 32:20638-20653. [PMID: 38859441 DOI: 10.1364/oe.524681] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2024] [Accepted: 04/29/2024] [Indexed: 06/12/2024]
Abstract
Gallium nitride (GaN) nanowire, as a type of wide bandgap nanomaterial, has attracted considerable interest because of its outstanding physicochemical properties and applications in energy storage and photoelectric devices. In this study, we prepared GaN nanowires via a facile chemical vapor deposition method and investigated their nonlinear absorption responses ranging from ultraviolet to near-infrared in the z-scan technology under irradiation by picosecond laser pulses. The experiment revealed that GaN nanowires exhibit remarkable nonlinear absorption characteristics attributed to their wide bandgap and nanostructure, including saturable absorption and reverse saturable absorption. When compared to bulk GaN crystals, the nanowires provide a richer and more potent set of nonlinear optical effects. Furthermore, we conducted an analysis of the corresponding electronic transition processes associated with photon absorption. Under high peak power density laser excitation, two-photon absorption or three-photon absorption dominate, with maximum modulation depths of 73.6%, 74.9%, 63.1% and 64.3% at 266 nm, 355 nm, 532 nm, and 1064 nm, respectively, corresponding to absorption coefficients of 0.22 cm/GW, 0.28 cm/GW, 0.08 cm/GW, and 2.82 ×10-4 cm3/GW2. At lower peak energy densities, GaN nanowires demonstrate rare and excellent saturation absorption characteristics at wavelength of 355 nm due to interband transitions, while saturable absorption is also observed at 532 nm and 1064 nm due to band tail absorption. The modulation depths are 85.2%, 41.9%, and 13.7% for 355 nm, 532 nm, and 1064 nm, corresponding to saturation intensities of 3.39 GW/cm2, 5.58 GW/cm2 and 14.13 GW/cm2. This indicates that GaN nanowires can be utilized as broadband optical limiters and high-performance pulse laser modulating devices, particularly for scarce ultraviolet optical limiters, and saturable absorbers for ultraviolet and visible lasers. Furthermore, our study demonstrates the application potential of wide bandgap nanomaterials in nonlinear optical devices.
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Sun W, Li Z, Li D, Gao K, Miao Z, Han Y, Guan S, Li Z, Sun C. Pre-lithiation strategy to design a high-performance zinc oxide anode for lithium-ion batteries. NANOSCALE 2024; 16:4880-4889. [PMID: 38319407 DOI: 10.1039/d3nr06263e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
Zinc oxide (ZnO) shows great potential as an anode material for advanced energy storage devices owing to its good structural stability and low cost. However, its inferior cycling capacity seriously restricts its practical application. In this work, a pre-lithiation strategy is adopted to construct pre-lithiated ZnO (Li-ZnO) via the facile solid-state reaction method. This well-designed Li-ZnO is polycrystalline, consisting of fine particles. XPS analysis and Raman results confirm the successful pre-lithiation strategy. The pre-lithiation strategy increases the electronic conductivity of Li-ZnO without further carbon coating and suppresses the volume expansion during the electrochemical reaction. As a result, 5 mol% Li-ZnO displays good reversible capacity with a specific capacity of 639 mA h g-1 after 200 cycles at 0.1 A g-1. After 1440 cycles at 1.0 A g-1, the capacity retention is 380 mA h g-1. The pseudocapacitance contribution can reach up to 72.5% at 1.0 mV s-1. Electrochemical kinetic analysis shows that this pre-lithiation strategy can accelerate the lithium-ion diffusion and charge transfer kinetics of the Li-ZnO anode and suppress the pulverization of the electrochemical reaction. This study demonstrates the necessity of developing new anode materials with good cycling stability via this pre-lithiation strategy.
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Affiliation(s)
- Wei Sun
- College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, Shandong, P. R. China.
| | - Zeyang Li
- College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, Shandong, P. R. China.
| | - Dazhi Li
- College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, Shandong, P. R. China.
| | - Kesheng Gao
- College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao 266061, Shandong, P. R. China
| | - Zeqing Miao
- College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao 266061, Shandong, P. R. China
| | - Ying Han
- Yantai Guobang Chemical Machine Technology Co, Ltd, Yantai 264004, Shandong, P. R. China
| | - Shengjing Guan
- School of Chemistry and Chemical Engineering, Shandong University of Technology, Zibo 255049, Shandong, China
| | - Zhenjiang Li
- College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, Shandong, P. R. China.
| | - Changlong Sun
- College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, Shandong, P. R. China.
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Sun C, Xu X, Gui C, Chen F, Wang Y, Chen S, Shao M, Wang J. High-Quality Epitaxial N Doped Graphene on SiC with Tunable Interfacial Interactions via Electron/Ion Bridges for Stable Lithium-Ion Storage. NANO-MICRO LETTERS 2023; 15:202. [PMID: 37596510 PMCID: PMC10439101 DOI: 10.1007/s40820-023-01175-6] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2023] [Accepted: 07/21/2023] [Indexed: 08/20/2023]
Abstract
Tailoring the interfacial interaction in SiC-based anode materials is crucial to the accomplishment of higher energy capacities and longer cycle lives for lithium-ion storage. In this paper, atomic-scale tunable interfacial interaction is achieved by epitaxial growth of high-quality N doped graphene (NG) on SiC (NG@SiC). This well-designed NG@SiC heterojunction demonstrates an intrinsic electric field with intensive interfacial interaction, making it an ideal prototype to thoroughly understand the configurations of electron/ion bridges and the mechanisms of interatomic electron migration. Both density functional theory (DFT) analysis and electrochemical kinetic analysis reveal that these intriguing electron/ion bridges can control and tailor the interfacial interaction via the interfacial coupled chemical bonds, enhancing the interfacial charge transfer kinetics and preventing pulverization/aggregation. As a proof-of-concept study, this well-designed NG@SiC anode shows good reversible capacity (1197.5 mAh g-1 after 200 cycles at 0.1 A g-1) and cycling durability with 76.6% capacity retention at 447.8 mAh g-1 after 1000 cycles at 10.0 A g-1. As expected, the lithium-ion full cell (LiFePO4/C//NG@SiC) shows superior rate capability and cycling stability. This interfacial interaction tailoring strategy via epitaxial growth method provides new opportunities for traditional SiC-based anodes to achieve high-performance lithium-ion storage and beyond.
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Affiliation(s)
- Changlong Sun
- School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou, 510006, People's Republic of China
| | - Xin Xu
- School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou, 510006, People's Republic of China
| | - Cenlin Gui
- School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou, 510006, People's Republic of China
| | - Fuzhou Chen
- School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou, 510006, People's Republic of China
| | - Yian Wang
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, People's Republic of China
| | - Shengzhou Chen
- School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou, 510006, People's Republic of China
| | - Minhua Shao
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, People's Republic of China.
| | - Jiahai Wang
- School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou, 510006, People's Republic of China.
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Wang Y, Xiong Z, Zhao Y, Zhang Z, Qiu G, Liang Z, Mei C, Hou S, Li S, Gao F, Zhao L. Ga 2O 3 Quantum Dots with N-Doped Amorphous Carbon Fixed for Efficient Storage and Transfer of Lithium Ions by Introduction of Dopamine Hydrochloride. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:3628-3636. [PMID: 36857165 DOI: 10.1021/acs.langmuir.2c03166] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The Ga2O3 anode has great potential due to its self-healing and high theoretical capacity in lithium-ion batteries. Like anodes with other transition metal oxides, the Ga2O3 anode has the problems of structural change and low electrical conductivity. The electrochemical performance of the Ga2O3 anode still needs to be improved. In this work, we synthesized a Ga2O3 quantum dots@N-doped carbon (Ga2O3-QD@NC) composite by hydrothermal reaction with a carbon source of dopamine hydrochloride, in which Ga2O3 quantum dots were dispersed in the interior of the amorphous carbon. Such a special structure is conducive to the high-speed migration of lithium ions and electrons and effectively inhibits volume expansion and agglomeration. Smaller and more uniform quantum dots facilitate efficient repair of the structure. Due to these advantages, the Ga2O3-QD@NC electrode has great electrochemical performance. The Ga2O3-QD@NC electrode has an initial discharge capacity of 1580 mAh g-1 with a high first Coulombic efficiency of 62.8% and a cycling capacity of 953 mAh g-1 under 0.1 A g-1. It even has a capacity of 460 mAh g-1 at 1 A g-1 after 300 cycles. This strategy can provide a new direction for the Ga2O3 anode in lithium-ion batteries with high capacity.
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Affiliation(s)
- Yuyang Wang
- GuangDong Engineering Technology Research Center of Low Carbon and Advanced Energy Materials, Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China
| | - Zhisong Xiong
- GuangDong Engineering Technology Research Center of Low Carbon and Advanced Energy Materials, Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China
| | - Ying Zhao
- Tianjin University of Traditional Chinese Medicine, Tianjin 301617, China
| | - Zhiqiang Zhang
- GuangDong Engineering Technology Research Center of Low Carbon and Advanced Energy Materials, Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China
| | - Guanyu Qiu
- GuangDong Engineering Technology Research Center of Low Carbon and Advanced Energy Materials, Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China
| | - Zhifu Liang
- GuangDong Engineering Technology Research Center of Low Carbon and Advanced Energy Materials, Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China
| | - Chen Mei
- GuangDong Engineering Technology Research Center of Low Carbon and Advanced Energy Materials, Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China
| | - Shuang Hou
- GuangDong Engineering Technology Research Center of Low Carbon and Advanced Energy Materials, Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China
| | - Shuti Li
- GuangDong Engineering Technology Research Center of Low Carbon and Advanced Energy Materials, Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China
| | - Fangliang Gao
- GuangDong Engineering Technology Research Center of Low Carbon and Advanced Energy Materials, Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China
| | - Lingzhi Zhao
- GuangDong Engineering Technology Research Center of Low Carbon and Advanced Energy Materials, Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China
- SCNU Qingyuan Institute of Science and Technology Innovation Company, Ltd., Qingyuan 511517, China
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Gao K, Miao Z, Han Y, Li D, Sun W, Zhang M, Meng A, Sun C, Li Z. One-step method synthesis of cobalt-doped GeZn1.7ON1.8 particle for enhanced lithium-ion storage performance. Electrochim Acta 2023. [DOI: 10.1016/j.electacta.2023.141876] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2023]
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7
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The design strategy and implementation method of Ga-based material in the anode of advanced lithium-ion battery: A mini review. RESULTS IN CHEMISTRY 2023. [DOI: 10.1016/j.rechem.2023.100800] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2023] Open
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Han Y, Sun C, Gao K, Ding S, Miao Z, Zhao J, Yang Z, Wu P, Huang J, Li Z, Meng A, Zhang L, Chen P. Heterovalent oxynitride GaZnON nanowire as novel flexible anode for lithium-ion storage. Electrochim Acta 2022. [DOI: 10.1016/j.electacta.2022.139931] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
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Yao J, Ma F, Wang YJ, Zuo Y, Yan W. Zinc vacancy modulated quaternary metallic oxynitride GeZn 1.7ON 1.8: as a high-performance anode for lithium-ion storage. RSC Adv 2022; 12:27072-27081. [DOI: 10.1039/d2ra04622a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/25/2022] [Accepted: 09/03/2022] [Indexed: 11/21/2022] Open
Abstract
Zn-defected GeZn1.7ON1.8 (GeZn1.7−xON1.8) was successfully synthesized by a simple ammoniation and acid etching method. This well-designed Zn cation-deficient GeZn1.7−xON1.8 anode shows enhanced lithium-ion storage performance.
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Affiliation(s)
- Jinli Yao
- Department of Research and Development, Meijin Energy Ltd, Beijing 100052, China
| | - Fukun Ma
- New Energy and Advanced Functional Materials Group, School of Materials Science and Engineering, Dongguan University of Technology, Dongguan 523808, Guangdong, China
| | - Yan-Jie Wang
- New Energy and Advanced Functional Materials Group, School of Materials Science and Engineering, Dongguan University of Technology, Dongguan 523808, Guangdong, China
| | - Yinzhe Zuo
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
| | - Wei Yan
- College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
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Xie K, Wang J, Yu S, Wang P, Sun C. Tunable electronic properties of free-standing Fe-doped GaN nanowires as high-capacity anode of lithium-ion batteries. ARAB J CHEM 2021. [DOI: 10.1016/j.arabjc.2021.103161] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022] Open
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