Um HS, Chae JJ, Lee SH, Rahmawan Y, Suh KY. Pitch reduction lithography by pressure-assisted selective wetting and thermal reflow.
J Colloid Interface Sci 2012;
376:250-4. [PMID:
22465734 DOI:
10.1016/j.jcis.2012.02.044]
[Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/04/2012] [Revised: 02/18/2012] [Accepted: 02/21/2012] [Indexed: 11/30/2022]
Abstract
We report on a new pitch reduction lithographic technique by utilizing pressure-assisted selective wetting and thermal reflow. The primary line-and-space pattern of low molecular weight polystyrene (PS) (Mw=17,300) was formed by solvent-assisted capillary force lithography (CFL), on which a diluted photoresist (PR) solution was selectively filled into the spaces by the application of a slight pressure (200 g cm(-2)). Subsequent removal of the PS pattern by toluene and ashing process led to a line pattern with approximately 50% pitch reduction. It was observed that the size reduction and space to width ratios were controllable by changing PR concentration and ashing time.
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