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Wang X, Chen X, Xu G, Li J, Guo J, Wang Q. Performance of zinc oxide quantum dots coated paper and application of fluorescent anti-counterfeiting. APPLIED OPTICS 2021; 60:2304-2313. [PMID: 33690329 DOI: 10.1364/ao.416896] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/09/2020] [Accepted: 02/03/2021] [Indexed: 06/12/2023]
Abstract
Fluorescent anti-counterfeiting is one of the most widely used anti-counterfeiting technologies at present. The demand to develop new anti-counterfeiting materials and technology is more and more urgent. Zinc oxide quantum dots (ZnO QDs) have superior fluorescent properties under ultraviolet light, making them a suitable replacement for traditional phosphors for anti-counterfeiting printing, which is environmentally friendly and meets the needs of sustainable development. In this paper, water-soluble ZnO QDs with an average particle size of 5.64 nm were prepared. Paper coated by ZnO QDs was obtained after ultrasonic treatment, which could emit bright yellow fluorescence when excited by ultraviolet light. As the concentration of ultrasonic solution is increased, the loading amount of ZnO QDs on the coated paper increased gradually, reaching the maximum when the concentration is increased to 1molL-1, which then does not change with an increase in concentration. The fluorescent intensity of the coated paper was consistent with the changing trend of the loading amount. The coated paper has excellent optical stability, is easy to recycle, and provides simple identification of authenticity by ultraviolet light and anti-copy functionality. Their application in packaging and printing is of great significance to the development of complex, concealed and non-repeatable anti-counterfeiting technology.
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Liu KK, Liu Q, Yang DW, Liang YC, Sui LZ, Wei JY, Xue GW, Zhao WB, Wu XY, Dong L, Shan CX. Water-induced MAPbBr 3@PbBr(OH) with enhanced luminescence and stability. LIGHT, SCIENCE & APPLICATIONS 2020; 9:44. [PMID: 32194958 PMCID: PMC7078192 DOI: 10.1038/s41377-020-0283-2] [Citation(s) in RCA: 46] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2019] [Revised: 02/08/2020] [Accepted: 03/04/2020] [Indexed: 05/25/2023]
Abstract
Poor stability has long been one of the key issues that hinder the practical applications of lead-based halide perovskites. In this paper, the photoluminescence (PL) quantum yield (QY) of bromide-based perovskites can be increased from 2.5% to 71.54% by introducing water, and the PL QY of a sample in aqueous solution decreases minimally over 1 year. The enhanced stability and PL QY can be attributed to the water-induced methylamino lead bromide perovskite (MAPbBr3)@PbBr(OH). We note that this strategy is universal to MAPbBr3, formamidine lead bromide perovskite (FAPbBr3), inorganic lead bromide perovskite (CsPbBr3), etc. Light-emitting devices (LEDs) are fabricated by using the as-prepared perovskite as phosphors on a 365 nm UV chip. The luminance intensity of the LED is 9549 cd/m2 when the driven current is 200 mA, and blemishes on the surface of glass are clearly observed under the illumination of the LEDs. This work provides a new strategy for highly stable and efficient perovskites.
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Affiliation(s)
- Kai-Kai Liu
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052 China
| | - Qian Liu
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052 China
| | - Dong-Wen Yang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052 China
| | - Ya-Chuan Liang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052 China
| | - Lai-Zhi Sui
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023 China
| | - Jian-Yong Wei
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052 China
| | - Guo-Wei Xue
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052 China
| | - Wen-Bo Zhao
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052 China
| | - Xue-Ying Wu
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052 China
| | - Lin Dong
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052 China
| | - Chong-Xin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052 China
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Chen P, Liu Y, Zhang Z, Sun Y, Hou J, Zhao G, Zou J, Fang Y, Xu J, Dai N. In situ growth of ultrasmall cesium lead bromine quantum dots in a mesoporous silica matrix and their application in flexible light-emitting diodes. NANOSCALE 2019; 11:16499-16507. [PMID: 31453602 DOI: 10.1039/c9nr05731e] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Recently, CsPbX3 (X = Cl, Br, and I) perovskite quantum dots (QDs) have exhibited significant potential for application in the field of lighting. However, their self-absorption and agglomeration significantly decrease their photoluminescence when their solution is centrifuged to form a powder; this hinders their applications in the field of solid-state lighting. Currently, there is lack of efficient solutions to overcome the self-absorption issue for CsPbX3 QDs. Thus, herein, an effective strategy is proposed via the in situ growth of CsPbBr3 (CPB) QDs in a mesoporous silica (m-SiO2) matrix, where self-absorption originating from the agglomeration of the QD powder is distinctly suppressed in the m-SiO2 matrix. Furthermore, due to its higher transmissivity, some photons can transport along the channels of m-SiO2 with less light loss. As a result, the photoluminescence quantum yield (PLQY) of 68% for the CsPbBr3/m-SiO2 (CPB/MS) powder is distinctly higher than that of the discrete CPB powder (36%). In addition, the chemical stability, thermal quenching and luminous decay were evidently improved for the CPB/MS nanocomposite. Finally, a remote flexible light-emitting diode with ultrahigh stability and arbitrary bending angle was achieved, which presented a pathway for the application of CPB QDs in solid-state lighting.
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Affiliation(s)
- Peng Chen
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 200235, P.R. China.
| | - Yufeng Liu
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 200235, P.R. China. and State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, P.R. China.
| | - Zhijun Zhang
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, P.R. China
| | - Yan Sun
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, P.R. China.
| | - Jingshan Hou
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 200235, P.R. China.
| | - Guoying Zhao
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 200235, P.R. China.
| | - Jun Zou
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 200235, P.R. China.
| | - Yongzheng Fang
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 200235, P.R. China.
| | - Jiayue Xu
- School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 200235, P.R. China.
| | - Ning Dai
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, P.R. China.
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