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Levkov LL, Surin NM, Borshchev OV, Titova YO, Dubinets NO, Svidchenko EA, Shaposhnik PA, Trul AA, Umarov AZ, Anokhin DV, Rosenthal M, Ivanov DA, Ivanov VV, Ponomarenko SA. Three Isomeric Dioctyl Derivatives of 2,7-Dithienyl[1]benzo-thieno[3,2-b][1]benzothiophene: Synthesis, Optical, Thermal, and Semiconductor Properties. MATERIALS (BASEL, SWITZERLAND) 2025; 18:743. [PMID: 40004267 PMCID: PMC11857614 DOI: 10.3390/ma18040743] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/30/2024] [Revised: 01/27/2025] [Accepted: 02/04/2025] [Indexed: 02/27/2025]
Abstract
Organic semiconductor materials are interesting due to their application in various organic electronics devices. [1]benzothieno[3,2-b][1]benzothiophene (BTBT) is a widely used building block for the creation of such materials. In this work, three novel solution-processable regioisomeric derivatives of BTBT-2,7-bis(3-octylthiophene-2-yl)BTBT (1), 2,7-bis(4-octylthiophene-2-yl)BTBT (2), and 2,7-bis(5-octylthiophene-2-yl)BTBT (3)-were synthesized and investigated. Their optoelectronic properties were characterized experimentally by ultraviolet-visible and fluorescence spectroscopy, time-resolved fluorimetry, and cyclic voltammetry and studied theoretically by Time-Dependent Density Functional Theory calculations. Their thermal properties were investigated by a thermogravimetric analysis, differential scanning calorimetry, polarizing optical microscopy, and in situ small-/wide-angle X-ray scattering measurements. It was shown that the introduction of alkyl substituents at different positions (3, 4, or 5) of thiophene moieties attached to a BTBT fragment significantly influences the optoelectronic properties, thermal stability, and phase behavior of the materials. Thin films of each compound were obtained by drop-casting, spin-coating and doctor blade techniques and used as active layers for organic field-effect transistors. All the OFETs exhibited p-channel characteristics under ambient conditions, while compound 3 showed the best electrical performance with a charge carrier mobility up to 1.1 cm2·V-1s-1 and current on/off ratio above 107.
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Affiliation(s)
- Lev L. Levkov
- Enikolopov Institute of Synthetic Polymeric Materials Russian Academy of Sciences, Profsoyuznaya Str. 70, Moscow 117393, Russia; (L.L.L.); (N.M.S.); (O.V.B.); (Y.O.T.); (N.O.D.); (E.A.S.); (P.A.S.); (A.A.T.)
| | - Nikolay M. Surin
- Enikolopov Institute of Synthetic Polymeric Materials Russian Academy of Sciences, Profsoyuznaya Str. 70, Moscow 117393, Russia; (L.L.L.); (N.M.S.); (O.V.B.); (Y.O.T.); (N.O.D.); (E.A.S.); (P.A.S.); (A.A.T.)
| | - Oleg V. Borshchev
- Enikolopov Institute of Synthetic Polymeric Materials Russian Academy of Sciences, Profsoyuznaya Str. 70, Moscow 117393, Russia; (L.L.L.); (N.M.S.); (O.V.B.); (Y.O.T.); (N.O.D.); (E.A.S.); (P.A.S.); (A.A.T.)
| | - Yaroslava O. Titova
- Enikolopov Institute of Synthetic Polymeric Materials Russian Academy of Sciences, Profsoyuznaya Str. 70, Moscow 117393, Russia; (L.L.L.); (N.M.S.); (O.V.B.); (Y.O.T.); (N.O.D.); (E.A.S.); (P.A.S.); (A.A.T.)
| | - Nikita O. Dubinets
- Enikolopov Institute of Synthetic Polymeric Materials Russian Academy of Sciences, Profsoyuznaya Str. 70, Moscow 117393, Russia; (L.L.L.); (N.M.S.); (O.V.B.); (Y.O.T.); (N.O.D.); (E.A.S.); (P.A.S.); (A.A.T.)
- National Research Centre «Kurchatov Institute», Novatorov Str. 7A-1, Moscow 119421, Russia
| | - Evgeniya A. Svidchenko
- Enikolopov Institute of Synthetic Polymeric Materials Russian Academy of Sciences, Profsoyuznaya Str. 70, Moscow 117393, Russia; (L.L.L.); (N.M.S.); (O.V.B.); (Y.O.T.); (N.O.D.); (E.A.S.); (P.A.S.); (A.A.T.)
| | - Polina A. Shaposhnik
- Enikolopov Institute of Synthetic Polymeric Materials Russian Academy of Sciences, Profsoyuznaya Str. 70, Moscow 117393, Russia; (L.L.L.); (N.M.S.); (O.V.B.); (Y.O.T.); (N.O.D.); (E.A.S.); (P.A.S.); (A.A.T.)
| | - Askold A. Trul
- Enikolopov Institute of Synthetic Polymeric Materials Russian Academy of Sciences, Profsoyuznaya Str. 70, Moscow 117393, Russia; (L.L.L.); (N.M.S.); (O.V.B.); (Y.O.T.); (N.O.D.); (E.A.S.); (P.A.S.); (A.A.T.)
| | - Akmal Z. Umarov
- Faculty of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1/73, Moscow 119991, Russia; (A.Z.U.); (D.V.A.); (D.A.I.)
| | - Denis V. Anokhin
- Faculty of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1/73, Moscow 119991, Russia; (A.Z.U.); (D.V.A.); (D.A.I.)
- Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry RAS, Chernogolovka, Moscow 142432, Russia
| | - Martin Rosenthal
- Faculty of Chemistry, KU Leuven, Celestijnenlaan 200F, P.O. Box 2404, B-3001 Leuven, Belgium;
| | - Dimitri A. Ivanov
- Faculty of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1/73, Moscow 119991, Russia; (A.Z.U.); (D.V.A.); (D.A.I.)
- Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry RAS, Chernogolovka, Moscow 142432, Russia
- Institut de Sciences des Matériaux de Mulhouse-IS2M, CNRS UMR 7361, Jean Starcky, 15, F-68057 Mulhouse, France
| | - Victor V. Ivanov
- Moscow Center for Advanced Studies, Kulakova Str. 20, Moscow 123592, Russia;
| | - Sergey A. Ponomarenko
- Enikolopov Institute of Synthetic Polymeric Materials Russian Academy of Sciences, Profsoyuznaya Str. 70, Moscow 117393, Russia; (L.L.L.); (N.M.S.); (O.V.B.); (Y.O.T.); (N.O.D.); (E.A.S.); (P.A.S.); (A.A.T.)
- Faculty of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1/73, Moscow 119991, Russia; (A.Z.U.); (D.V.A.); (D.A.I.)
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Casalegno M, Provenzano S, Raos G, Moret M. Exploring the phase behavior of C8-BTBT-C8 at ambient and high temperatures: insights and challenges from molecular dynamics simulations. Phys Chem Chem Phys 2024; 26:21990-22005. [PMID: 39109422 DOI: 10.1039/d4cp01884b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/23/2024]
Abstract
C8-BTBT-C8 is one promising candidate for the development of high-performance electronic devices based on thin-film technologies. Its monoclinic polymorph has a well-established role in thin-film growth. Yet, quite little information is available about its dynamics on the molecular scale, and the structures of the mesophases which form at high temperature (about 100 K above ambient temperature). The present study is devoted to the analysis of such phases, with the ultimate goal of developing molecular models. Already at ambient temperature, our molecular dynamics simulations reveal a rich conformational behavior of the alkyl side chains, with gauche conformations as leading structural defects. Heating promotes the formation of a stacking faulted mesophase (380 K), and a smectic phase, at 385 K, upon side chain melting. Although more disordered, this phase bears several analogies with the smectic A phase, experimentally observed at 382.5 K. At higher temperatures, the increase in configurational disorder is brought by molecular diffusion and other phenomena, finally leading to an isotropic molten phase. Our in-depth analysis, complemented by hot-stage polarizing microscopy data, provides interesting insights into this material, highlighting the challenges associated with the modeling of soft semiconducting systems.
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Affiliation(s)
- Mosè Casalegno
- Department of Chemistry, Materials and Chemical Engineering "G. Natta", Politecnico di Milano, via L. Mancinelli 7, 20131 Milano, Italy.
| | | | - Guido Raos
- Department of Chemistry, Materials and Chemical Engineering "G. Natta", Politecnico di Milano, via L. Mancinelli 7, 20131 Milano, Italy.
| | - Massimo Moret
- Department of Materials Science, Università degli Studi di Milano-Bicocca, Via R. Cozzi 55, 20125 Milano, Italy.
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Balakrishnan J, Muthukumar P, Arputharaj DS, Christopher PVM, Karuppannan S, Kittusamy S. Theoretical investigations of the substituent effect on the opto-electronic properties of the linearly fused napthadithiophene-based molecules. J Comput Chem 2024; 45:915-929. [PMID: 38170163 DOI: 10.1002/jcc.27301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/13/2023] [Revised: 12/01/2023] [Accepted: 12/15/2023] [Indexed: 01/05/2024]
Abstract
The optoelectronic and charge transport properties of eight linearly fused Napthadithiophene (NDT) molecules with different electron-withdrawing (EWG) and electron-donating (EDG) substituents are studied using the density functional theory (DFT) methods. The effect of the substitution of EWG and EDG on the molecular structure, frontier molecular orbitals, ionization energy, electron affinity, reorganization energy, crystal packing, and charge carrier mobility are studied. The crystal structure simulation method is used to optimize the possible crystal packing arrangements for the studied molecules. The energy and distribution of electron density on the frontier molecular orbitals are strongly influenced by the substitution of EWG and EDG, thereby changes in the absorption spectrum and charge transport properties. The unsubstituted NDT molecule possesses a maximum hole mobility of 2.8 cm2 V-1 s-1, which is due to the strong intermolecular interactions. Therefore, the NDT molecule can be used as a p-type semiconducting material. Among the studied molecules, the CCH-substituted NDT molecule, NDT-CCH, possesses a higher electron mobility of 1.13 cm2 V-1 s-1. The C2H5-substituted NDT molecule, NDT-C2H5, possesses ambipolar behavior with mobility of 4.77 × 10-2 cm2 V-1 s-1 and 1.70 × 10-2 cm2 V-1 s-1 for hole and electron, respectively.
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S K N, P R, Ann Babu S, John J, Hopf H. A Review on the Synthetic Methods towards Benzothienobenzothiophenes. CHEM REC 2024; 24:e202400019. [PMID: 38456791 DOI: 10.1002/tcr.202400019] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/24/2024] [Revised: 02/20/2024] [Indexed: 03/09/2024]
Abstract
Benzothienobenzothiophenes (BTBTs) are a class of heteroacenes for which two distinct isomers have been identified depending on the locations of the fused benzothiophene motifs. Benzothienobenzothiophenes represent a class of heteroacenes demonstrating remarkable electronic properties that make them prominent in the realm of organic semiconductors. The structure of BTBTs, incorporating two sulfur atoms, contributes to their unique electronic characteristics, including narrow bandgaps and effective charge transport pathways. These compounds have gained attention for their high charge carrier mobility, making them desirable candidates for application in organic field-effect transistors (OFETs) and other electronic devices. Researchers have explored various synthetic strategies to design and tailor the properties of BTBT derivatives, leading to advancements in the development of high-performance organic semiconductors. Various synthetic techniques for benzothienobenzothiophenes have been reported in the literature including multistep synthesis, tandem transformations, electrochemical synthesis, and annulations. This review investigates the generality of each synthetic methodology by highlighting its benefits and drawbacks, and it analyses all synthetic approaches described for the creation of the two isomers. For the advantage of the readers, we have delved upon every mechanism of the reactions that are known. Finally, we have also summarized the synthetic methodologies that are used for making benzothienobenzothiophene analogues for material applications.
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Affiliation(s)
- Nandana S K
- Chemical Sciences and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology (CSIR-NIIST), Thiruvananthapuram, 695019, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002, India
| | - Rahul P
- Chemical Sciences and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology (CSIR-NIIST), Thiruvananthapuram, 695019, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002, India
| | - Sheba Ann Babu
- Chemical Sciences and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology (CSIR-NIIST), Thiruvananthapuram, 695019, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002, India
| | - Jubi John
- Chemical Sciences and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology (CSIR-NIIST), Thiruvananthapuram, 695019, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002, India
| | - Henning Hopf
- Institut für Organische Chemie, Technische Universität Braunschweig, Hagenring 30, D-38106, Braunschweig, Germany
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