A DFT study of Janus structure of S and Se in HfSSe layered as a promising candidate for electronic devices

High throughput calculations for a dataset of bilayer materials

Bilayer materials made of 2D monolayers are emerging as new systems creating diverse opportunities for basic research and applications in optoelectronics, thermoelectrics, and topological science among others. Herein, we present a computational bilayer materials dataset containing 760 structures with their structural, electronic, and transport properties. Different stacking patterns of each bilayer have been framed by analyzing their monolayer symmetries. Density functional theory calculations including van der Waals interactions are carried out for each stacking pattern to evaluate the corresponding ground states, which are correctly identified for experimentally synthesized transition metal dichalcogenides, graphene, boron nitride, and silicene. Binding energies and interlayer charge transfer are evaluated to analyze the interlayer coupling strength. Our dataset can be used for materials screening and data-assisted modeling for desired thermoelectric or optoelectronic applications.

First-principles study of the structural and electronic properties of tetragonal ZrOX (X = S, Se, and Te) monolayers and their vdW heterostructures for applications in optoelectronics and photocatalysis

Using first-principles calculations, we have studied the structural and electronic properties of ZrOX (X = S, Se, and Te) monolayers and their van der Waals heterostructures in the tetragonal structure. Our results show that these monolayers are dynamically stable and are semiconductors with electronic bandgaps ranging from 1.98 to 3.16 eV as obtained with the GW approximation. By computing their band edges, we show that ZrOS and ZrOSe are of interest for water splitting applications. In addition, the van der Waals heterostructures formed by these monolayers show a type I band alignment for ZrOTe/ZrOSe and a type II alignment for the other two heterostructures, making them potential candidates for certain optoelectronic applications involving electron/hole separation.

First principles study on structural, electronic and optical properties of HfS2(1-x)Se2x and ZrS2(1-x)Se2x ternary alloys

Alloying 2D transition metal dichalcogenides (TMDs) with dopants to achieve ternary alloys is as an efficient and scalable solution for tuning the electronic and optical properties of two-dimensional materials. This study provides a comprehensive study on the electronic and optical properties of ternary HfS_2(1−x)Se_2(x) and ZrS_2(1−x)Se_2(x) [0 ≤ x ≤ 1] alloys, by employing density functional theory calculations along with random phase approximation. Phonon dispersions were also obtained by using density functional perturbation theory. The results indicate that both of the studied ternary families are stable and the increase of Selenium concentration in HfS_2(1−x)Se_2(x) and ZrS_2(1−x)Se_2(x) alloys results in a linear decrease of the electronic bandgap from 2.15 (ev) to 1.40 (ev) for HfS_2(1−x)Se_2(x) and 1.94 (ev) to 1.23 (ev) for ZrS_2(1−x)Se_2(x) based on the HSE06 functional. Increasing the Se concentration in the ternary alloys results in a red shift of the optical absorption spectra such that the main absorption peaks of HfS_2(1−x)Se_2(x) and ZrS_2(1−x)Se_2(x) cover a broad visible range from 3.153 to 2.607 eV and 2.405 to 1.908 eV, respectively. The studied materials appear to be excellent base materials for tunable electronic and optoelectronic devices in the visible range.

Adding Selenium to HfS₂ and ZrS₂ two-dimensional materials allows tuning the optical properties in a wide visible spectrum that can be used in various electronic and optical applications, including solar cells.

On the atomic structure of two-dimensional materials with Janus structures

The discrepancy between the bright theoretical projections for two-dimensional (2D) Janus structures and the lack of experimental realisation of these structures motivated us to study the effect of structural disorder on the stability of MoSSe, SnSSe, PtSSe, In₂SSe and GaInSe₂. The calculation results demonstrate that the difference between metal-sulfur and metal-selenium bonds makes Janus structures frustrated and less energetically favourable than less ordered allotropes of the same compounds. This result explains the difficulties encountered in the experimental fabrication of these materials. In the bulk, there is an additional contribution to the total energy from dipole-dipole interactions between layers with a Janus structure that can overcome the energetic cost of structural frustration in layers for compounds with sufficiently large dipole moments. However, the entropic contribution to the free energy decreases the favourability of the ordered Janus structure. The calculation results are used to make recommendations to enable the discovery and synthesis of 2D materials with Janus structures.

The electrical and spin properties of monolayer and bilayer Janus HfSSe under vertical electrical field

In this paper, the electrical and spin properties of mono- and bilayer HfSSe in the presence of a vertical electric field are studied. The density functional theory is used to investigate their properties. Fifteen different stacking orders of bilayer HfSSe are considered. The mono- and bilayer demonstrate an indirect bandgap, whereas the bandgap of bilayer can be effectively controlled by the electric field. While the bandgap of bilayer closes at large electric fields and a semiconductor to metal transition occurs, the effect of a normal electric field on the bandgap of the monolayer HfSSe is quite weak. Spin-orbit coupling causes band splitting in the valence band and Rashba spin splitting in the conduction band of both mono- and bilayer structures. The band splitting in the valence band of the bilayer is smaller than a monolayer, however, the vertical electric field increases the band splitting in bilayer one. The stacking configurations without mirror symmetry exhibit Rashba spin splitting which is enhanced with the electric field.