Fabrication of beam homogenizers in quartz by laser micromachining

Sub-wavelength ripples in fused silica after irradiation of the solid/liquid interface with ultrashort laser pulses

Laser-induced backside wet etching (LIBWE) is performed using ultrashort 248 nm laser pulses with a pulse duration of 600 fs to obtain sub-wavelength laser-induced periodic surface structures (LIPSS) on the back surface of fused silica which is in contact with a 0.5 mol l(-1) solution of pyrene in toluene. The LIPSS are strictly one-dimensional patterns, oriented parallel to the polarization of the laser radiation, and have a constant period of about 140 nm at all applied laser fluences (0.33-0.84 J cm(-2)) and pulse numbers (50-1000 pulses). The LIPSS amplitude varies due to the inhomogeneous fluence in the laser spot. The LIPSS are examined with scanning electron microscopy (SEM) and atomic force microscopy (AFM). Their power spectral density (PSD) distribution is analysed at a measured area of 10 µm × 10 µm. The good agreement of the measured and calculated LIPSS periods strongly supports a mechanism based on the interference of surface-scattered and incident waves.

Laser-Induced Backside Wet Etching of Transparent Materials with Organic and Metallic Absorbers

Laser-induced backside wet etching (LIBWE) allows the high-quality etching of transparent materials for micro- and nanopatterning. Recent own results of LIBWE with hydrocarbon and metallic absorbers (H- and M-LIBWE) are summarized and compared with selected results of other groups regarding the etching process and the etched surface. Significant results on the impact of the liquid absorber, the material and the wavelength, and the pulse length of the laser to the etching are selected for this comparison. The etching of submicron-sized periodic structures in sapphire and fused silica with interference techniques and the selection of the preferred method in dependence on the material and the processing goal discussed. The experimental results are discussed on a thermal model considering both interface and volume absorption of the laser beam. These results have the conclusion that the etching at M-LIBWE is mainly due to material melting and evaporation whereas at H-LIBWE, a modified near-surface region with a very high absorption is ablated.