CdS nanosheet-sensitized solar cells based on SnO2/MgO composite films

Improved light-harvesting and suppressed charge recombination by introduction of a nanograss-like SnO2 interlayer for efficient CdS quantum dot sensitized solar cells

Quantum dot sensitized solar cell (QDSSC) performance is primarily limited by the recombination of charges at the interfaces of TiO₂/quantum dot (QD) sensitizer/electrolyte. Hence, blocking or suppressing the charge recombination is an essential requirement to elevate the QDSSC performance to the next level. To retard the charge recombination, herein, we propose the introduction of a SnO₂ nanograss (NG) interlayer on the surface of TiO₂ using the facile chemical bath deposition method. The SnO₂ NG interlayer not only inhibits the interfacial recombination processes in QDSSCs but also enhances the light-harvesting capability in generating more excitons. Hence, the TiO₂/SnO₂ NG/CdS QDSSCs can achieve the power conversion efficiency of 3.15%, which is superior to that of a TiO₂/CdS device (2.16%). Electrochemical impedance spectroscopy, open-circuit voltage decay and dark current analyses confirm that the recombination of charges at the photoanode/electrolyte interface is suppressed and the life time is improved by introducing the SnO₂ NG interlayer between the TiO₂ and CdS QD sensitizer.

Preparation of Tin Oxide Quantum Dots in Aqueous Solution and Applications in Semiconductor Gas Sensors

Tin oxide quantum dots (QDs) were prepared in aqueous solution from the precursor of tin dichloride via a simple process of hydrolysis and oxidation. The average grain size of QDs was 1.9 nm. The hydrothermal treatment was used to control the average grain size, which increased to 2.7 and 4.0 nm when the operating temperatures of 125 and 225 °C were employed, respectively. The X-ray photoelectron spectroscopy (XPS) spectrum and X-ray diffraction analysis (XRD) pattern confirmed a rutile SnO₂ system for the QDs. A band gap of 3.66 eV was evaluated from the UV-VIS absorption spectrum. A fluorescence emission peak was observed at a wavelength of 300 nm, and the response was quenched by the high concentration of QDs in the aqueous solution. The current-voltage (I-V) correlation inferred that grain boundaries had the electrical characteristics of the Schottky barrier. The response of the QD thin film to H₂ gas revealed its potential application in semiconductor gas sensors.