Peculiarities in the Raman spectra of ZrB12 and LuB12 single crystals

The lower symmetry electron-density distribution and the charge transport anisotropy in cubic dodecaboride LuB12

High-quality single crystals of LuB₁₂ are grown using the induction zone melting method. The x-ray data are collected at temperatures 293, 135, 95, 50 K. The crystal structure of LuB₁₂ can be refined with record low R-factor in the cubic Fm [Formula: see text] m symmetry group despite reiterated observations of the cubic symmetry distortions both in the unit-cell values and in the physical properties. A peculiar computing strategy is developed to resolve this contradiction. True symmetry of the electron-density distribution in LuB₁₂ is proved to be much lower than cubic as a result, which correlates very accurately with anisotropy of transport properties of LuB₁₂.

Effect of concentrated light on morphology and vibrational properties of boron and tantalum mixtures

Heating a mixture of boron (impurities: carbon ∼ B₅₀C₂, boric acid - H₃BO₃) and tantalum (Ta) powders in nitrogen flow in a xenon high-flux optical furnace was performed. As-received powder composed of h-BN, H₃BO₃, TaB₂, B₉H₁₁ and a number of other phases including β-rhombohedral boron, apparently, heavily doped with Ta. FT-IR examination of any sample of the material reveals the complicated vibration spectrum containing, in particular, an absorption band near 2260 cm^-1. The shapes of these bands are different for samples because powders were synthesized at different temperatures. Known, that in β-rhombohedral boron lattice, there are nano-sized voids of different types, which allow an accommodation of single atoms or small groups of atoms. Theoretical calculations performed by the method of quasi-classical type yields the same value, 2260 cm^-1, for the vibrations frequency of Ta atoms in D-type crystallographic voids in β-rhombohedral boron lattice. Since, Ta atoms are known to prefer accommodation just in D-voids the experimentally detected bands can be identified with localized vibrations of Ta atoms.

Raman scattering and isotopic phonon effects in dodecaborides

The Raman spectra of numerous dodecaborides have been measured on high-quality single crystals at ambient conditions with high spectral resolution and signal-to-noise ratio. Besides the strong Raman-active modes, numerous Raman-inactive modes occur in the spectra, indicating distortions of the structures. Ab initio calculation of the phonon spectra on ZrB(12) excellently agrees with the experimental results. Force constants are theoretically calculated and force parameters are estimated from the Raman frequencies. The influence of the surface range on the Raman spectra is evident. The different isotopic effects (virtual crystal approximation, the polarization effect and the effect of isotopic disorder) on the phonon frequencies are determined, separated and discussed.

Raman effect in icosahedral boron-rich solids

We present Raman spectra of numerous icosahedral boron-rich solids having the structure of α-rhombohedral, β-rhombohedral, α-tetragonal, β-tetragonal, YB66, orthorhombic or amorphous boron. The spectra were newly measured and, in some cases, compared with reported data and discussed. We emphasize the importance of a high signal-to-noise ratio in the Raman spectra for detecting weak effects evoked by the modification of compounds, accommodation of interstitial atoms and other structural defects. Vibrations of the icosahedra, occurring in all the spectra, are interpreted using the description of modes in α-rhombohedral boron by Beckel et al. The Raman spectrum of boron carbide is largely clarified. Relative intra- and inter-icosahedral bonding forces are estimated for the different structural groups and for vanadium-doped β-rhombohedral boron. The validity of Badger's rule is demonstrated for the force constants of inter-icosahedral B-B bonds, whereas the agreement is less satisfactory for the intra-icosahedral B-B bonds.

On surface Raman scattering and luminescence radiation in boron carbide

The discrepancy between Raman spectra of boron carbide obtained by Fourier transform Raman and conventional Raman spectrometry is systematically investigated. While at photon energies below the exciton energy (1.560 eV), Raman scattering of bulk phonons of boron carbide occurs, photon energies exceeding the fundamental absorption edge (2.09 eV) evoke additional patterns, which may essentially be attributed to luminescence or to the excitation of Raman-active processes in the surface region. The reason for this is the very high fundamental absorption in boron carbide inducing a very small penetration depth of the exciting laser radiation. Raman excitations essentially restricted to the boron carbide surface region yield spectra which considerably differ from bulk phonon ones, thus indicating structural modifications.